单晶外延生长 single crystal epitaxial growth(0)   “单晶外延生长”译为未确定词的双语例句      However, the NbCl5-precursor SBN thin films exhibits the same high preferred orientation on Si substrate and the smallest full width at half-maximum(FWHM) value is only 2.5?      另外，实验发现，在Nb(OC_2H_5)_5制备的先驱溶液里加入不同含量的K离子，在Si衬底浙江大学硕士学位论文摘要上生成的SBN薄膜取得了与NbC15制备的薄膜相似的单晶外延生长; 而且，K离子的含量对SBN薄膜取向的影响存在一个最优值。 短句来源      This paper presents tbe study of diamond gas--phase epitaxial film deposied onthe diamond surfaces(100), (110),(111), using microwave CVD method, in which CH,-COCH; +H_2, were selected to be sourse gases,the SDA and millimeter--grade synthesi -zed monocrystalline diamonds were substrates. At the same time, we have had a tenta-tive inquire into the condition.      本文介绍了用微波化学气相沉积法,以丙酮、氢体系为研究对象,以 SDA级、毫米级人造金刚石单晶为基体,金刚石(100)、(110)、(111)晶面的气相外延生长的研究,对单晶外延生长条件进行了初步的探讨,使用RED、SEM、MLRS等检测手段,对生长的外延层进行检测。 短句来源      Both the fundamental principle of nanoheteroepitaxial techno-logy and various methods for fabricating nano-pattern on substrate are overviewed. In addition,the high quality mismatched(20%)GaN film with dislocation-free grown on Si(111)substrate and InP film on Si(100)substrates fabricated by nanoheteroepitaxy also demonstrated its availability.      详细地综述了纳米异质外延技术的原理,介绍了纳米图样制作技术并展示了运用纳米异质外延技术在Si(111)衬底上实现高失配GaN(失配度为20%)薄膜材料及在Si(100)衬底上实现InP薄膜材料的高品质单晶外延生长。 短句来源   相似匹配句对      Epitaxial Growth of Multiple Layer Monocrystal Films      多层复合单晶薄膜的外延生长 短句来源      The Grown of ZnSe Single Crystal Film by Hot Wall Epitaxy      ZnSe单晶的热壁外延生长(英文) 短句来源      MgO SINGLE CRYSTAL      MgO单晶 短句来源      Modern Epitaxy Techniques      现代外延生长技术 短句来源      Growth of GaSb Single Crystals      Gasb单晶的生长 短句来源 查询“单晶外延生长”译词为用户自定义的双语例句     我想查看译文中含有：的双语例句 为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法，我们为您准备了出自英文原文的大量英语例句，供您参考。   single crystal epitaxial growth The most important examples of this growth mode involve single-crystal epitaxial growth of semiconductors films. 例句来源                This paper presents tbe study of diamond gas--phase epitaxial film deposied onthe diamond surfaces(100), (110),(111), using microwave CVD method, in which CH,-COCH; +H_2, were selected to be sourse gases,the SDA and millimeter--grade synthesi -zed monocrystalline diamonds were substrates. At the same time, we have had a tenta-tive inquire into the condition.RED, SEM and MLRS were used to analyze the films.             本文介绍了用微波化学气相沉积法,以丙酮、氢体系为研究对象,以 SDA级、毫米级人造金刚石单晶为基体,金刚石(100)、(110)、(111)晶面的气相外延生长的研究,对单晶外延生长条件进行了初步的探讨,使用RED、SEM、MLRS等检测手段,对生长的外延层进行检测。 文摘来源          GaAs/Ge heterostructrue has been obtained on a home made low pressure MOCVD system.The crystal quality of the GaAs epi layer was studied by the double rystal X ray diffractometer.The morphology was studied,too.Results indicate that only proper growth rate for the GaAs epi layer will give anti phase domain free and better morphology GaAs epi layer on Ge substrate miscut 9 degrees towards the (110).             采用自制的液相金属氧化物化学汽相沉积 (LP MOCVD)设备 ,在Ge( 1 0 0 )向 ( 1 1 0 )面偏 9°外延生长出GaAs单晶外延层 ,对电池材料进行了X射线衍射测试分析 ,半峰宽为 5 2″ 讨论了外延生长参量对GaAs/Ge的影响 ,表明抑制反向畴不仅与过渡层有关 ,而且与GaAs单晶外延生长参量有关 适当的生长速率可有效地抑制反向畴的生长 文摘来源          Nanoheteroepitaxial techonology is a nanofabrication route to improved high mismatched semiconductor thin film materials.With the further advance in the fabrication tehcnology of nano-pattern,much attention will be paid to nanoheteroepitaxy for the growth of high quality heteroepitaxial film on Si substrate.Both the fundamental principle of nanoheteroepitaxial techno-logy and various methods for fabricating nano-pattern on substrate are overviewed.In addition,the high quality mismatched(20%)GaN film with di...             纳米异质外延技术是制备高失配半导体薄膜的一种纳米制作技术路线,随着超大规模集成电路纳米图样加工技术的进步,它将在制备无缺陷密度且单晶品质完美的高失配半导体薄膜材料中发挥巨大的作用。详细地综述了纳米异质外延技术的原理,介绍了纳米图样制作技术并展示了运用纳米异质外延技术在Si(111)衬底上实现高失配GaN(失配度为20%)薄膜材料及在Si(100)衬底上实现InP薄膜材料的高品质单晶外延生长。 文摘来源       相关查询: 外延生长 单晶 硅单晶 单晶铜 单晶si 单晶金刚石 红宝石单晶 大单晶 单晶晶须 单晶炉 单晶生长 锗单晶  对查询结果不满意

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