表面能带 surface band(2)   surface band      Atomic partial densities of states,charge density distributions,and surface band structures are calculated and analyzed on both Ga terminated surface and N terminated surface.      分析了得到的各原子分态密度、面电荷密度分布以及表面能带结构等性质 ,比较了 Ga N(0 0 1)的 Ga端表面和 N端表面两种情况 . 短句来源      The dynamic surface band bending of cleaved InP(110) sample was investegated using in situ XPS analysis and the causes of band bending was discussed acconiing to the experimental results. It was concluded that there is no intrinsic surface states in InP and neither the residual gas in UHV nor the X-Ray radiation causes the band bending, the band bending should be caused by the surface defects induced during the cleavage and lattice relaxation.      用XPS测得了真空解理后InP样品（110）表面能带弯曲的动态过程，并对引起InP表面能带弯曲的可能原因进行了讨论．排除了本征表面态、真空中残留气体和X射线辐射等原因，认为解理过程在表面产生的缺陷和解理后表面晶格弛像产生的缺陷可能是导致能带弯曲的原因． 短句来源   “表面能带”译为未确定词的双语例句      Analysis on photocatalytic activity and surface energy band structure of(Ag,Nd)/TiO_2 nanometer materials      (Ag,Nd)/TiO_2纳米材料光催化活性及其表面能带结构分析 短句来源      STUDY ON SURFACE ENERGY BAND STRUCTURES OF (Ce, Ag)/TiO_2 NANOMETER MATERIALS FOR CLEANING-UP ENVIRONMENT      环境净化功能(Ce,Ag)/TiO_2纳米材料表面能带结构的研究 短句来源      Structure for Electronic States of Ge(313) Surface      Ge(313)表面能带结构分析 短句来源      The surface energy band structure of (Ce, Ag)/TiO 2 nanometer photocatalystic materials for purifying environment was studied by scanning tunneling microscopy and tunneling spectroscopy (STM/STS).      用扫描隧道显微镜 /扫描隧道谱 (STM /STS)技术 ,研究 (Ce ,Ag) /TiO2 纳米光催化材料的表面能带结构 . 短句来源      Theoretical Study on the Electronic Structures for the Surfaces of NbC Solid      NbC固体表面能带和电子结构的理论研究 短句来源 更多          相似匹配句对      Structure for Electronic States of Ge(313) Surface      Ge(313)表面能带结构分析 短句来源      A Calculation of the Electronic Band of InP (110) Surface      InP(110)表面电子能带计算 短句来源      However, the adsorption of small molecule on the GaN surfaces, are relatively in lack.      )表面的吸附。 短句来源      Architecture Surface      建筑表面 短句来源      Design of The Energy Band For Heterojunction Bipolar Transistors      异质结双极晶体管的能带设计 短句来源 查询“表面能带”译词为用户自定义的双语例句     我想查看译文中含有：的双语例句 为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法，我们为您准备了出自英文原文的大量英语例句，供您参考。   surface band Metallic conductivity arises in the adsorbed potassium layer as a result of the development of an induced surface band at the Fermi level. 例句来源       It is found that submonolayer Ba coatings induce cardinal changes in the electronic properties of the surface with the formation of a charge accumulation layer in the region of the near-surface band bending. 例句来源       A new adsorption-induced surface band is observed in the electronic spectrum of the system Cs/O/W(110) with a binding energy ～0.7 eV. 例句来源       The effect of a change in the width of the surface band produced by adsorbed atoms on the emission probability of neutrals and ions is investigated. 例句来源       It is shown that the reversible temperature-induced changes in the surface band bending and the work function of Si have a stepwise character in the temperature range 80-300 K. 例句来源       更多                    A note on Transfer. Matrix Green Function (TMG) in the calculation of projected bulk band structure is presented. It is argued that the transfer matrix also contains the information of bulk as well as of surface. The projected bulk band structure in the direction of the surface can be provided when the transfer matrix has values eiδ (δ is real). As an illustrative example, the projected bulk band structure in the direction (111) of Silicon is calculated by means of tight-binding orbitals S and SP~3 separate...             本文指出,通常用于表面能带计算的传递矩阵格林函数方法,同样能给出体能带在此表面布里渊区内的投影。其想法是,在体的情况下,相邻层次的格林函数矩阵元至多只差一个位相因子。作为阐述性的例子,本文详细计算了硅的体能带在(111)面方向上的投影,计算采用紧索缚近似的哈密顿量,分别在S波和SP~3波情况下获得了和其它比较繁复的方法完全一致的结果。 文摘来源          Effect of annealing and light illumination on electrical and optical properties of undoped a-Si :H films were studied. The surface energy band bending is created by H20 adsorbats in order to compare the difference between annealing state and light illumination state. The results show that the density of gap state has been increased by light illumination.             研究了直流辉光放电沉积本征a-Si:H薄膜在退火与光照过程中电性和光性的变化。用表面水汽吸附实验造成表面能带弯曲。从退火态与光照态能带弯曲程度的不同验证了光照后带隙态密度增加。 文摘来源          UPS involving core level photoemission peaks (Ga 3d for GaAs and Si 2p for Si)is measured for the (111), (110), (111),and (001)surfaces of GaAs and Si using thelight from a helium lamp (21.2 eV and 40.8 eV) and from the Berlin synchrotron ra-diation source BESSY (108.6 eV),respectively.These surfaces are prepared by ion bo-mbardment and annealing on cylindrically shaped GaAs and Si crystals with [110] astheir axis.The GaAs cylinder is in addition prepared by molecular beam epitaxy yield-ing As-rich phases o...             利用 He灯光源(21.2eV和 40.8 eV)和柏林 BESSY同步辐射光源(108.6eV),分别测量了GaAs和Si的(111)、(110)、(111)和(001)表面的包括芯态光电子峰(GaAs的Ga 3d和Si的2p)的光电子谱.这些表面是利用离子轰击加高温退火的方法,分别在以[110]晶向为轴的GaAs和Si单晶圆柱体上制备的.另外,还利用分子束外延方法在GaAs 圆柱面上制备其外延表面,这样得到的(111)和(001)面是富As的.根据光电子谱的低能(二次电子)阈值和芯态光电子峰的能量位置,确定各种表面的功函数φ和电子亲合势x. 结果表明,由于GaAs晶体的极性和表面成分的差异,它的x值随晶向的变化比Si的大.不同晶向Si的x值的微弱变化,可能是由于不同的表面原子再构产生不同的表面偶极子引起的.对于GaAs的不同晶面,φ和x的变化基本上是平行的,表明不同晶向表面能带的弯曲大致相同;对于Si,_▲~＇φ的变化比x的变化明显,表明其表面能带的弯曲与晶向有关. 文摘来源   << 更多相关文摘         相关查询: 表面能带弯曲 表面能带结构 表面 表面投影能带结构 表面［ 能带 表面态和能带结构 表面结冰 表面仪 热表面 理想表面 倾斜表面  对查询结果不满意

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