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串联结
相关语句
  series junction
     Broad-band rf Match Series Junction Arrays for SIS Mixing
     宽带rf匹配SIS混频串联结
短句来源
  “串联结”译为未确定词的双语例句
     The stability of the Nb tumid junctions was investigated. There ate no obvious changes in the Ⅰ-Ⅴ characteristics of the 40 series junctions going through 61 thermal cyclings between room temperature and 4.2k, and being kept at room temperature for more than 200 days.
     对Nb隧道结的稳定性作了初步考察,40个串联结经过61次室温-4.2K之间的热循环和在室温下保存200天以上,结的I-V特性没有显著变化。
短句来源
     Each of the I-V feature curves also given in the paper.
     制作出结面积为4×4μm~2的五结和十结串联结阵,文中分别给出I—V特性的测试结果。
短句来源
     Final,we seggested an idea of averlapping sevies junction arrays,which shall be able to use the large model jun-dion arrays in SIS mixer.
     最后提出一种重叠串联结阵的设想,为更大规模串联结阵用于SIS混频器提供可能。
短句来源
     1-V and 10-V Josephson junction series array voltage standards have been investigated at National Institute of Metrology(NIM), P.R. China in order to establish the national legal primary voltage standard.
     为建立国家法定电压基准,中国计量科学研究院(NIM)对1-V和10-V约瑟夫森串联结阵电压标准进行了研究。
短句来源
  相似匹配句对
     Broad-band rf Match Series Junction Arrays for SIS Mixing
     宽带rf匹配SIS混频串联
短句来源
     Chinese Knot
     中国
短句来源
     I-V Properties Simulation of PbS Quantum-dot's DBTJ
     含PbS量子点串联双隧道I—V特性仿真
短句来源
     Series deconvolution by resolution into factors.
     因式分解串联反褶积
短句来源
     PHOTOCURRENT IN A DIFFUSED p-n JUNCTION
     扩散p-n的光电流
短句来源
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This paper reports the experimental results of the high quality Nb superconducting films fabricated by electron-beam evaporation at the pressure of 10-5 to 10-6 Torr. The highest critical temperature of the films is 9.2 K, which is close to that of pure bulk materials ( - 9.3 K). The influence of deposited conditions such as film thickness, deposition rate, substrate temperature and background pressure etc, on critical temperature of the films has been investigated. The composition and structure of the films...

This paper reports the experimental results of the high quality Nb superconducting films fabricated by electron-beam evaporation at the pressure of 10-5 to 10-6 Torr. The highest critical temperature of the films is 9.2 K, which is close to that of pure bulk materials ( - 9.3 K). The influence of deposited conditions such as film thickness, deposition rate, substrate temperature and background pressure etc, on critical temperature of the films has been investigated. The composition and structure of the films were analysed using X-ray diffraction, electron microscopy and X-ray photoelectron spectroscopy (XPS).The Nb-NbOx-Pb tunel junctions can be fabricated by either thermal oxidation, or DC and RF glow discharge oxidation. The composition of the oxide barrier has been analysed using XPS. The stability of the Nb tumid junctions was investigated. There ate no obvious changes in the Ⅰ-Ⅴ characteristics of the 40 series junctions going through 61 thermal cyclings between room temperature and 4.2k, and being kept at room temperature for more than 200 days.

本文报道了在10~(-5)—10~(-6)托的高真空下用电子束蒸发制作高质量的Nb超导薄膜的实验结果,Nb膜的临界温度T_c可以达到9.2K,接近大块纯Nb的T_c值(~9.3K)。研究了薄膜厚度、蒸发速率、衬底温度和真空度等淀积条件对Nb膜T_c的影响。用X射线衍射、电子显微和表面分析等方法分析了Nb膜的成分和结构。 用热氧化、直流辉光放电氧化和射频氧化等方法制成了Nb-NbO_x-Pb隧道结,通过表面分析研究了氧化位垒层的成分。对Nb隧道结的稳定性作了初步考察,40个串联结经过61次室温-4.2K之间的热循环和在室温下保存200天以上,结的I-V特性没有显著变化。

In this payer,the application of the single-step lift-off process in the fabrication of Pb-alloy superconducting tunnel junctions is described.By the process,with home-made equipments and photoresist,we have developed the series junction arrays containing five and ten junctions which unit area is four micron-square.Each of the I-V feature curves also given in the paper.

本文介绍了单层胶剥离工艺在制作小面积超导隧道结中的应用。采用该技术,用一般国产设备和光刻胶.制作出结面积为4×4μm~2的五结和十结串联结阵,文中分别给出I—V特性的测试结果。

In this paper,we presented an integrating broad-band rf match circuit with series junction arrays which is of great importance to improve characteristics of SIS mixers and advance its practical applications.And then presented the design consideration,fabrication process,and measurmental results of the junction arrays.Final,we seggested an idea of averlapping sevies junction arrays,which shall be able to use the large model jun-dion arrays in SIS mixer.

该文介绍把宽带rf匹配电路与结阵集成在一起对提高SIS混频器性能,推动它走向实用的意义,及这种结阵的设计考虑、制备过程和结的初步测试结果.最后提出一种重叠串联结阵的设想,为更大规模串联结阵用于SIS混频器提供可能。

 
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