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电路稳定性
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  circuit stability
     This paper mainly discusses issues on the integrality of signal in the process of designing module circuit of LED matrix screen, analyzes the impact of signal integrality on the circuit stability and present corresponding solution.
     讨论LED点阵屏显示单元板电路设计中遇到的信号完整性问题。 分析信号完整性对电路稳定性的影响,提出了相应的解决方法。
短句来源
     In the infrared photoelectricity reflection sensor electric circuit and the ultrasonic receive circuit, the circuit stability and precision was increased after the triode and the low-end operational amplifier were replaced by TL431.
     在红外光电反射式传感器电路中和超声波接受电路中,其三极管和低价位运放用TL431替换后,可提高电路稳定性及精度。
短句来源
     By comparing the performance of two types of preamplifiers,such as transimpedance gain,bandwidth,circuit stability and input noise,a suggestion in the design of high speed preamplifier with BJT transistors was made.
     通过比较两种不同输入结构前置放大器的增益、带宽、电路稳定性以及噪声特性,提出了双极型晶体管实现高速前置放大器的设计方案.
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  “电路稳定性”译为未确定词的双语例句
     The design is done first in an equivalent lumped circuit model,then how to improve the stability of the circuit and lower the noise figure are discussed,and finally it works out a circuit simulation result of a two step LNA with the working passband 1650M~2350M,the gain G>29dB,the gain flatness GF±1dB,noise figure <0.8dB.
     设计过程首先从等效集总元件电路模型设计入手,然后对如何提高电路稳定性,降低噪声系数等方面进行了探讨,最后给出了工作带宽为1650M~2350M,增益G>29dB,增益平坦度GF±1dB,噪声系数NF<0.8dB的两级低噪声放大器的电路仿真结果。
短句来源
     Design and Realization of High Precision I-V Convertion of I-FOG
     I-FOG光电转换电路稳定性分析与设计
短句来源
     Analysis of the Stability of Feedback of Amplifier Circuit Based on Nyquist Rule
     引入奈奎斯特(Nyquist)准则对反馈放大电路稳定性的分析
短句来源
     After discussing the stability of the circuits in detail, the stable conditions which differ from EL-Masry (1981) are given.
     文章对电路稳定性做了详细的讨论,提出了与EL-Masry(1981)相异的稳定条件。
短句来源
     If need be, from. 10-3Pa to 2 atm.
     改进电路稳定性后,下限可低10 ̄-3Pa。
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  相似匹配句对
     C kstability ;
     C k稳定性;
短句来源
     (3) It has good stability.
     3)电路稳定性好。
短句来源
     The Stability of DC Circuits′ Operating Points
     直流电路工作点的稳定性
短句来源
     Basic Direct Current Circuits
     直流电路
短句来源
     Stabilities of Halides
     卤化物的稳定性
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  circuit stability
The input pins to these op amps were bootstrapped for circuit stability.
      


Based on the theory and practice of automatic equalization of PCM 30/32 regenerative repeaters, this paper presents a realizable automatic equalizing circuit which has the following features: (1) It satisfies the main technical requirements of PGM 30/32 regenerative repeaters with simulated sine wave cross-talk margin≤14 dB and error rate ≤10-8 per single repeater. (2) It uses no traditional line build-out network and thus simplifies the circuit. (3) It has good stability. In the range from -5℃ to + 45℃, the...

Based on the theory and practice of automatic equalization of PCM 30/32 regenerative repeaters, this paper presents a realizable automatic equalizing circuit which has the following features: (1) It satisfies the main technical requirements of PGM 30/32 regenerative repeaters with simulated sine wave cross-talk margin≤14 dB and error rate ≤10-8 per single repeater. (2) It uses no traditional line build-out network and thus simplifies the circuit. (3) It has good stability. In the range from -5℃ to + 45℃, the variation in frequeney-gain characteristic of automatic equalizing amplifier is ≤1 dB.The new circuit mainly consists of a fixed equalizing amplifier and an AGC circuit which are both discussed in detail in this paper. Finally, we have analysed the equalized pulse waveform both in the frequency domain and in the time domain.

本文根据PCM 30/32路再生中继器自动均衡的原理及实践。设计一种可实现的自动均衡的新电路,其特点是:1)能满足再生中继器主要技术指标,单个中继器模拟的正弦波串话富余度≤14dB,误码率≤10_(-8)。2)没有采用传统的线路补偿网络,简化了电路。3)电路稳定性好。在-5℃到+45℃的范围内。自动均衡放大器的频率增益特性曲线的变化≤1dB。 本文详细讨论了新电路的两个主要部分,即固定均衡放大器和自动增益控制电路,并对均衡过的脉冲波形进行频域上及时域上的分析。

This paper deals thcorelically with stability of L C circuit, of which L is a periodic chan He inductance. Consequently, a criterion for stability and the corsponding method of calcula tion are presented. By applying this method, the stable and inslable regions of those circuits with various damping factor can be easily and accurately differentiated.

本文从理论上探讨了含周期性时变元件(?)的r(?)C电路的稳定性问题,提出了r(?)C电路稳定性判据和相应的计算方法,应用这个方法能简易而准确地区分出各种阻尼率时电路的稳定区与不稳定区。

The oxidation mechanism of a doped polycrystalline silicon and the several factors af-fecting the oxidation rate are analysed. It is shown that the oxidation rate of dopedpolycrystalline silicon is affected by the oxidation temperature, The dopant segregation,and the dopant concentration. It has been found that 2000A thickness difference of adioxide silicon film between heavily phosphorus-doped polycrystalline silicon and lightlydoped silicon substrate by steam oxidation in the low oxidation temperature (e.g.800℃)can...

The oxidation mechanism of a doped polycrystalline silicon and the several factors af-fecting the oxidation rate are analysed. It is shown that the oxidation rate of dopedpolycrystalline silicon is affected by the oxidation temperature, The dopant segregation,and the dopant concentration. It has been found that 2000A thickness difference of adioxide silicon film between heavily phosphorus-doped polycrystalline silicon and lightlydoped silicon substrate by steam oxidation in the low oxidation temperature (e.g.800℃)can be obtained. The instability of integrated circuit, which is another important problem in the fabri-cation, between phosphorus-doped and boron-doped polycrystalline si-gates are compared.It is shown that the former is better. The causes of the instability of V_T of boron-dopedpolycrystalline si-gate is also briefly analysed.

本文就掺杂多晶硅的氧化机理及影响其氧化速率的诸因素进行了分析。结果表明掺杂多晶硅的氧化速率受氧化温度、掺杂剂的分凝作用、掺杂的浓度等因素的影响。在低温(如800℃)下进行水汽氧化,就可以得到在要掺杂磷的多晶硅和轻掺杂的硅衬底之间具有约2000A的氧化层厚度差。 文中还对掺磷和掺硼多晶硅?电路的稳定性进行了比较,表明前者较为优越。并简要分析了掺硼硅?Ⅴ_r不稳定的原因。

 
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