助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   发射极晶体管 的翻译结果: 查询用时:0.162秒
图标索引 在分类学科中查询
所有学科
无线电电子学
物理学
更多类别查询

图标索引 历史查询
 

发射极晶体管
相关语句
  emitter transistor
    NON-CRYSTALLINE. EMITTER TRANSISTOR(FFJ)
    非晶态发射极晶体管(FFJ)
短句来源
    Lateral Distribution of Emitter Current Density in Amorphous State Emitter Transistor
    非晶态发射极晶体管中发射结电流密度的横向分布
短句来源
    THE MODEL OF FIELD INDUCED JUNCTION ON MINORITY CARRIER MIS TUNNEL JUNCTION EMITTER TRANSISTOR
    少子MIS隧道结发射极晶体管场感应结模型
短句来源
    A NEW IC WASHED EMITTER TRANSISTOR WITH MICRO-POWER DISSIPATION
    新型微功耗集成漂洗发射极晶体管
短句来源
    This paper describes the restrictions of further reducing the low-frequency noise to make a new washed emitter transistor whose emitter was formed by phosphorus diffusion through a thermally grown thin oxide layer and discusses the superior features, including the reduction of extra-phosphorus atoms in the emitter region and the restrictions of induced defects as well as emitter edge defects.
    本文论述了进一步降低晶体管低频噪声的限制,利用磷通过热生长薄氧化层扩散制成新型漂洗发射极晶体管,讨论了器件在降低进入晶体的过量磷原子、控制诱生缺陷和发射区边缘缺陷的作用。
短句来源
更多       
  “发射极晶体管”译为未确定词的双语例句
    A New Washed Emitter Transistor-a Low-Noise and Low-Frequency Device
    新型漂洗发射极晶体管——低频低噪声器件
短句来源
    It is shown that the new transistor has more uniform characteristics of current gain at low current level, and an excellent low-frequency noise figure, so that it is a promising low noise device at low frequency with simpler processes.
    实验结果表明,漂洗发射极晶体管的小电流增益均匀性好,具有良好的低频噪声特性,是一种工艺比较简化,性能较好的低频低噪声器件。
短句来源
    in this paper, a model of field induced junction on minority carrier MIS tunneljunction emitter transistors is proposed.
    对少子MIS隧道结发射极晶体管提出一种场感应结模型。
短句来源
    The prepared nano-sized powder was characterized by means of TEM and BET.
    采用透射电子显微镜(TEM)、平衡发射极晶体管(BET)对制备的纳米CeO2粉体进行了表征。
短句来源
查询“发射极晶体管”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法,我们为您准备了出自英文原文的大量英语例句,供您参考。
  emitter transistor
A MOS tunnel emitter transistor as a tool for determining the effective hole mass in a thin film of SiO2
      
Bias for the input is provided by current source Q5 with emitter transistor R5 setting the value of the current.
      
The two-emitter transistor functions somewhat like the diode AND gate.
      


This paper proposses a structure of modified Schottky transistorlogic circuit, called MSTL. It has not only the advantage of highspeed as STL, but also the advantage of simplifying the processwhich only needs one kind of Schottky diode as ISL, and its packingdensity is a little higher than that of STL and ISL. The logicswing of MSTL depends on the forward voltage of Schottky diode,and its logic swing will be 400 mv while using Al- Si Schottkydiodes in this circuit. In experiment, the oxide isolation techniquewas...

This paper proposses a structure of modified Schottky transistorlogic circuit, called MSTL. It has not only the advantage of highspeed as STL, but also the advantage of simplifying the processwhich only needs one kind of Schottky diode as ISL, and its packingdensity is a little higher than that of STL and ISL. The logicswing of MSTL depends on the forward voltage of Schottky diode,and its logic swing will be 400 mv while using Al- Si Schottkydiodes in this circuit. In experiment, the oxide isolation techniquewas used and polysilicon emitter transistors as well as Al - Si Schott-ky diodes were fabricated on N/N~+/P~+ epitaxial layer to formthe MSTL. The result shows that 3.5 ns propagation delay time isobtained at 50 μA apply current while using 4 μm design rule.

本文提出一种改进型萧脱基晶体管逻辑电路的结构,称为MSTL。它具有标准STL高速度的优点,又具有ISL只需要一种萧脱基二极管的简化工艺优点,而且集成度稍高于STL和ISL。它的逻辑摆幅由萧脱基二极管正向压降决定,采用铝硅萧脱基二极管,电路的逻辑摆幅为400mv。实验中,选用氧化隔离技术,多晶硅发射极晶体管和铝硅萧脱基二极管做在N/N~+/P~+外延片上构成MSTL。结果表明,用4μm的设计规范,在50μA的工作电流下,获得3.5ns的传输延迟时间。

This paper deals with the low-frequency noise spectra (measured at the frequencies ranged from 2Hz to 2kHz) of the transistor with polysilicon emitter,and the generation mechanism of this low-frequency noise. The polysilicon emitter transistor has an excellent low-frequency noise behavior, and thus can become a suitable low-frequency device with a low noise figure.

本文报导在2~2kHz的频率范围内测得的多晶硅发射极晶体管的低频噪声频谱,并论述低频噪声的产生机理。多晶硅发射极晶体管具有较常规晶体管优异的低频噪声特性而可望成为一种合适的低频低噪声器件。

A washed emitter transistor was developed, whose emitter was formed by phosphorus diffusion through a thin layer of thermally grown oxide. Studies were made on DC characteristics, current gain vs. collector current, and current gain vs. temperature. The effects of surface recombination and bandgap narrowing in the emitter on the gain were investigated. The results show that the washed emitter transistor has a uniform gain within the range of five orders of magnitude of Ic and can work at a current as low as...

A washed emitter transistor was developed, whose emitter was formed by phosphorus diffusion through a thin layer of thermally grown oxide. Studies were made on DC characteristics, current gain vs. collector current, and current gain vs. temperature. The effects of surface recombination and bandgap narrowing in the emitter on the gain were investigated. The results show that the washed emitter transistor has a uniform gain within the range of five orders of magnitude of Ic and can work at a current as low as 1 nA. Compared with the conventional transistors, the minimum working current can be reduced by a factor of 103 and the surface recombination velocity by a factor of 50%, and an increased yield of 20% can be achieved. The gain is less temperature dependent because of lighter bandgap narrowing in the emitter. It can be expected that the power dissipation of ICs will be considerably reduced if the washed emitter transistor is adopted.

研制了磷穿过热生长薄氧化层扩散形成发射区的高频集成漂洗发射极晶体管.从与常规晶体管比较的角度,研究了这种新型的漂洗发射极晶体管的直流特性、电流增益与集电极电流及温度的关系、发射区禁带变窄效应和表面复合效应对增益的影响,并比较分析了两者的磷杂质纵向分布.

 
<< 更多相关文摘    
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关发射极晶体管的内容
在知识搜索中查有关发射极晶体管的内容
在数字搜索中查有关发射极晶体管的内容
在概念知识元中查有关发射极晶体管的内容
在学术趋势中查有关发射极晶体管的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社