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激发密度
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  excitation density
     PHOTOLUMINESCENCE AND STIMULATED EMISSION IN CdS CRYSTAL AT DIFFERENT EXCITATION DENSITY
     不同激发密度下CdS晶体的光致发光和受激发射
短句来源
     Free Exciton Emission and Optical nonlinearities of ZnSe-ZnS/CaF_2 Superlattices Under High Excitation Density
     高激发密度下ZnSe-ZnS/CaF_2超晶格的自由激子发光及光学非线性
短句来源
     2. Under the excitation of 980nm diode laser, the up-conversion luminescence intensity was increased as the excitation power increased under lower excitation density, but was decreased in the case of higher excitation density. It was suggested that under intense laser irradiation some Ho~(3+) or Yb~(3+) were changed to other valence states through electronic tunneling processes.
     2. 在较高的激发密度下,增大激发功率,Ho~(3+)上转换发射强度反而减小,这可能是激光辐照使Ho~(3+)或Yb~(3+)发生了价态变化或其它形式的结构改变,导致上转换发光减弱。
短句来源
  “激发密度”译为未确定词的双语例句
     The Properties of Stimulated Emission in ZnCdTe ZnTe Multiple Quantum Wells at High Excitation Intensity
     高激发密度下ZnCdTe-ZnTe多量子阱的受激发射性质
短句来源
     The free exciton emission and optical nonlinearities in ZnSe-ZnS grown by MOCVD onCaF_2 substrates have been studied under different excitation densities at 77K. We report thefirst observation of the new emission band due to Ex-Ex interaction, exciton saturating absorp-tion and exciton optical bistability in ZnSe-ZnS/CaF_2 superlattices.
     在 77 K下用N_2激光器的 337.1nm脉冲激光线作为激发源,研究了高激发密度下ZnSe-ZnS/CaF_2超晶格的自由激子发光特性及激子的光学非线性.
短句来源
     It is found that the absorptivity and transmmission mechanism of the material at the surfacedeep level of ZnSiO 4:Mn and the luminous center of YAGG:Tb are damaged, with the result of saturation.
     本文研究高清晰投影电视管用绿色荧光粉ZnSiO4 :Mn和YAGG :Tb在高激发密度阴极射线束灼伤后影响发光效率的主要环节 ,发现ZnSiO4 :Mn的表面深层处材料的吸收和传递机制受到损伤 ,而YAGG :Tb的发光中心受到损伤 ,出现饱和。
短句来源
     The luminescence intensity variation of various radia-tive centers with excitation levels in GaP:(Bi,N) when compared with those of GaP:(Bi) pro-vides further evidence for the energy transfer process.
     变激发密度下各中心发光强度的变化关系以及与GaP∶(Bi)材料的实验结果比较,为这一能量转移过程提供了进一步的论据.
短句来源
     Time behaviors of the stimulated emission under relatively high pumping intensity, spontaneous emission, and laser pulses were compared, and hence the stimulated emission of ZnO thin films was proved.
     比较了较高激发密度下的受激发射、自发发射和激光脉冲的时间特性 ,这些都证实了该发射是受激发射。
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  相似匹配句对
     CHARGE DENSITY EXICITATION IN FINITE SEMICONDUCTOR SUPERLATTICES
     有限的半导体超晶格中的电荷密度激发
短句来源
     Density "Experiment
     密度的实验
短句来源
     Density of utility.
     效用密度
短句来源
     Fostering Innovation and Creativity among Employees in Workplace
     激发创造性
     The X-ray source used in this experiment is particularly prepared.
     用于泡沫材料密度测量的X射线源是特制的激发源。
短句来源
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  excitation density
The decrease in the lifetime of interwell excitons with increasing excitation density, as measured directly by time-resolved spectroscopy methods, confirms the explanation proposed for the effect.
      
Influence of an electric field and a high excitation density on the luminescence of epitaxial GaN films
      
The influence on the recombination luminescence spectra of a field applied to the Schottky barrier and a high excitation density GaN epitaxial films grown by metalorganic chemical-vapor deposition (MOCVD) is investigated.
      
The appearance of a new band caused by exciton-exciton collisions is observed under the conditions of a high excitation density.
      
A cathodoluminescence band in the green spectral region is observed in silicate matrices when the excitation density exceeds a certain threshold value.
      
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Blue electroluminescence of ZnSe MIS diodes had been obtained in the near band edge emission region[1,2] and the stimulated emission had also been observed in this region[3,4]. Many work in the origin of the blue emission of ZnSe at room temperature (RT) had been reported. The blue emission of ZnSe at RT was contributed by free exciton emission[5], the overlapping between free exciton emission and band-to-band transition[6], the emission due to the excitons which bounded to neutral donors[7], the band-to-band...

Blue electroluminescence of ZnSe MIS diodes had been obtained in the near band edge emission region[1,2] and the stimulated emission had also been observed in this region[3,4]. Many work in the origin of the blue emission of ZnSe at room temperature (RT) had been reported. The blue emission of ZnSe at RT was contributed by free exciton emission[5], the overlapping between free exciton emission and band-to-band transition[6], the emission due to the excitons which bounded to neutral donors[7], the band-to-band radiative recombinations[8] , the bound-to-free transitions[9], and the exciton-carrier interaction[10,1].In our earlier work, attention was focused on the identification of the free exciton emission[11] and the determination of the origin of the blue emission band[1] in ZnSe crystals. In this paper the recombination process of the blue emission at RT from VPE ZnSe epilayers was studied. It was found that the origin of the blue emission at RT could be contributed by the exciton-carrier interactions.The ZnSe epilayers Were grown on GaAs substrates by VPE method. The growth details was reported in our earlier papers[2,12]. Fig.1 showed the photoluminescence (PL) spectra of ZnSe epilayers at RTand 77K. The spectrum at 77K showed a strong near band edge emission, labeled Es band, and no selfactivated deep center emission was observed. At RT, there were a strong blue emission band (Es band) and a weak SA emission band.Fig. 2 showed the dependence of the near band edge emission of ZnSe epilayers on temperature in the range of 64-360K. It was found that the near band edge emission at 64K contained two emission bands, E band due to exciton-carrier interactions and P band caused by exciton-exciton interactions [13]. with increasing temperature, both E band and p band became undistinguishable. At 77K only one band (Es band) overlapping between the E and p band was detected in this emission region. with temperature further increased, the structurelless emission band widened and shifted towards long wavelength, and finally formed blue emission band at RT (Es band). This suggested that the Es band was related to free exciton emission.Fig. 3 showed the dependence of the intensity of near band edge emission of No.85-24 ZnSe epilayer on temperature. Near RT, the activation energy was about 19meV (Fig. 3 ) which was in agreement with the dissociated energy of free excitons in ZnSe crystals [13] . This means that free excitons are responsible fcr the Es band. As the excitation density was increased, the Es band widened and its peak positon shifted towards lower energy as shown in Fig. 4 and Fig. 5 . It was also found in Fig. 4 that with increasing excitation density, the intensity ratio of E's band to SA emission band increased. It should be noticed that these behaviours of Es band at RT was very similar to that of E's emission band at 77K, as shown in Fig. 6 . with excitation density increased the width of Es band became wider and its peak position shifted towards longer wavelength at 77K. It was also found in Fig. 6 that the intensity ratio of Es band which was caused by exciton recombinations to FB band which was due to free-to-bound transitions increased with increasing excitation intensity. Under high excitation density (I=0.16-1.7 I0 in Fig. 6 ) the ratio became decreasing with increasing excitation density. We showed in our recent work[13] that at low excitation level (I=0.01-0.16 I0), the Es band was mainly caused by exciton-carrier interactions. When the excitation density further increased, the exciton-exciton interactions appeared. The Es band was the overlapping of the E and p band at high excitation level. Because of the similarity between E's band at RT and Es band at 77K it is reasonable to conclude that the E's band was contributed by the scattered free exciton recombinations. The dissociation energy of free exciton of ZnSe is about 20meV[14], at RT many excitons were dissociated. Thus the possibility of exciton-exciton interactions was relatively small. That is why we couldn't observe the intensity ratio of E'S band

随着激发密度的增加,ZnSe外延单晶膜的室温蓝带Es′(~4650?)表现出红移和展宽,其行为与77K时得到的相一致。在200—300K温度范围内,测得Es′谱带的热激活能为19meV,它与ZnSe晶体自由激子的束缚能20meV十分接近。上述结果从实验上进一步证明了ZnSe外延单晶膜室温蓝带Es′起源于受导带中自由电子散射的自由激子的衰减。

Some recent research on ac-coupled thin film EL devices has been aimed at solving the problem of multicoloring.For multicoloring, rare-earth ions, which offer a wide variety of emission wavelength in the visible spectrum, have been widely investigated mainly in ZnS thin film. ZnS doped with ErF3 is an important green EL material, So far, no detailed study on the influence of ErF3 concentration on EL characteristics in ZnS:ErF3 EL thin film.We report, in this paper, that quenching process of the emisson of 2H1...

Some recent research on ac-coupled thin film EL devices has been aimed at solving the problem of multicoloring.For multicoloring, rare-earth ions, which offer a wide variety of emission wavelength in the visible spectrum, have been widely investigated mainly in ZnS thin film. ZnS doped with ErF3 is an important green EL material, So far, no detailed study on the influence of ErF3 concentration on EL characteristics in ZnS:ErF3 EL thin film.We report, in this paper, that quenching process of the emisson of 2H1 1/2 and 4S3/2 energy levels for ZnS:ErF3 EL thin film. The experimental results show that under the excitation of sine wave and pulsed electric field, with increasing of ErF3 concentration the emission intensities of 2H1 1/2 and 4S3/2 energy of Er3+ ion decrease. The emission intensity of 4F9/2 of Er3+ ion increase; the decay time of emission 2H1 1/2 and 4S3/2 energy levels decrease, the decay time of the emission 4F3/2 energy level of Er3+ ion increase. At the same time the emission intensities 4F7/2 and 4F5/2 +4F3/2 energy levels decrease, the emission intensities 2H9/2 and 4G1 1/2 energy levels increase. The decay time independent on excitation voltage for ZnS:ErF3 EL thin film with different ErF3 concentration. We believe that energy transfer takes place between excited Er3+ ions. It is found that the electric dipole-dipole interaction gives an important contribution to the energy transfer from 2H1 1/2→4F9/2 to 4F7/2→2H9/2 or 4F5/2+4F3/2→4G1 1/2 of excited Er3+ ions and that energy transfer is diffusion limited.

本文通过ZnS:ErF_3交流电致发光薄膜发光光谱和发光衰减特性研究了Er~(3+)离子~2H_(11/2),~3S_(3/2)发光的猝灭过程,实验结果表明由于Er~(3+)离子间多极矩相互作用,一个激发的Er~(3+)离子从~2H_(11/2)态无辐射弛豫到~4F_(9/2)态,同时另一个激发的Er~(3+)离子从~4F_(7/2)或~4F_(5/2)+~4F_(3/2)态跃迁到~2H_(9/2)或~4G_(11/2)态的交叉弛豫过程是~2H_(11/2),~4S_(3/2)发光浓度猝灭的一个主要机制,交叉弛豫几率随着掺杂浓度的增加而增大,根据在固定掺杂浓度下~2H_(11/2),~4S_(3/2)、~4F_(9/2)发光衰减时间不随激发密度而改变的实验结果,排除了处于激发的Er~(3+)离子之间直接能量传递的可能性,这结果与扩散限制的能量传递理论相符。

Luminescence of ZnTe crystal in the near band edge region has been investigated at 77K.Several explanations on the origin of near band edge emission have been reported. Cingolana et al. considered the origin as band -gap shrinkage appeared under high excitation density, Jin et al. considered it as bound-free transition,and Panowicz et al. considered it as ex-citon-carrier scattering.In present work, crystals of undoped p-ZnTe were grown by Bridgman method and photoluminescence spectra were measured by Model...

Luminescence of ZnTe crystal in the near band edge region has been investigated at 77K.Several explanations on the origin of near band edge emission have been reported. Cingolana et al. considered the origin as band -gap shrinkage appeared under high excitation density, Jin et al. considered it as bound-free transition,and Panowicz et al. considered it as ex-citon-carrier scattering.In present work, crystals of undoped p-ZnTe were grown by Bridgman method and photoluminescence spectra were measured by Model 44W spectrometer with RCA-C31034 photomultiplier under excitation of 3371A line of a N2 laser at 77-300K.The photoluminescence spectra of the ZnTe crystal under different excitation density at 77K are shown in Fig. 1 .The spectra under lower excitation density consist of three bands peaked at 5252A(E),5336A(FB0)and 5394 A (FB1)respectively. With increasing excitation density the width of E band becomes large and its peak position shifts towards longer wavelength, but the peak positions of FB0 and FB1 bands do not change. The FB0 and FB1 bands correspond to free-to-bound transition and its replica associated with 1 LO phonon, respectively. The E band is caused by exciton-carrier interactions.Fig.2 showes the dependence of the peak positions of E band under different excitation density on temperature in the range of 77-300K. With increasing excitation density, the dependence of peak position of E band on temperature in the range of 77-90K is quite different. When the excitation density I0 equals to 4MW/cm2, it nearly keeps no changing. This fact illu-strates that the composition of E band has already changed. Comparing the experiment of E band as shown in Fig. 3 at 77K with the theoretical result calculated by computer, it is found that the E band is composed by E'and P bands, the E' band might be contributed to the exciton-carrier scattering, and the P band to the exciton-exciton scattering.Collins et al.in PbI2have also worked out similar analysis. In the range of 90-300K,the behavior of E band shown in Fig. 2 indicates that exciton-carrier scattering plays a dominant role. Comparing photoluminescence spectra under different excitation density at 77K in Fig.1 with that at RT in Fig.4 we found that both E band at 77K and E band at RT have similar characters. This result indicates that the exciton-carrier scattering continues from 77K to RT.Because the peak position of FB0 transition is independent of the excitation density, we consider the shift towards olower energy of E band is caused by the exciton scattering,and is not due to the increasing of temperature of crystal lattice.As above discussion, we suggest that luminescence of the ZnTe crystal in the near band edge at RT might be attributed to the recombination of free exciton scattered by fres carrier.

在77—300K温度范围内,用N_2分子激光器的3371谱线激发未故意掺杂的p型ZnTe晶体,得到了与自由激子有关的发射。发现随着激发密度的增加,其发光光谱的峰值位置红移而谱带的半宽度展宽,这些结果可以用E_x—e和E_x—E_x的相互作用来解释。

 
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