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   密度降低 的翻译结果: 查询用时:0.872秒
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密度降低
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  density decreased
     However,the neuron density decreased by39%(AchE) and40%(NOS) in12months of age comparing with that of15days of age.
     3)小肠肌间神经丛中,12月龄的AchE和NOS阳性神经元总数比15日龄的增加163%和137%,但阳性神经元密度降低39%(AchE)和40%(NOS)。
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     It was found that the purity and crystallinity and dielectric constant of (Ba 0.5Sr 0.5)TiO 3 ferroelectric thin films increased and the leakage current density decreased with the increase of temperature.
     研究发现 ,随着烧结温度的升高 ,(Ba0 .5Sr0 .5)TiO3 薄膜纯度和结晶度增高 ,介电常数提高 ,漏电流密度降低 .
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     By day 3 and 7, in granulation tissue the densely packed fibroblasts were positively stained to the four growth factors except TGFβ3.macrophages were positive to TGFβ1, TGFβ2 and IL-6. By day 14 and 28, the cell density decreased while the staining of the cells to growth factors remained unchanged.
     术后3天与7天,肉芽组织中密集的成纤维细胞内除TGFβ3、外其余四种生长因子呈阳性,巨噬细胞呈TGFβ1、TGFβ2与IL-6阳性。 术后14天与28天,组织内细胞密度降低而其免疫染色性质不变。
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     Results: tibia and average density decreased ( P <0.01).
     结果 :模型组胫骨和平均骨密度降低 (P <0 0 5 )。
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     Results Endothelial cell density decreased and heteromorphic endothelial cell in- creased of 26 eyes.
     结果角膜内皮镜检查26只患眼,显示内皮细胞密度降低,细胞异形性比率增高。
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  density decrease
     The results indicate that the sintering density decrease from 5.82g/cm~3 to 5.24g/cm~3 with the increase of the content of Sc_2O_3 when sintering at 1600℃ for 4 h, but it increase from 5.63g/cm~3 to 5.86g/cm~3 as the content of Dy_2O_3 increase under the same conditions.
     结果表明:随着Sc_2O_3含量的增加,试样烧结密度降低(1600℃烧结密度由5.82g/cm~3降至5.24 g/cm~3),而Dy_2O_3却能提高烧结密度(1600℃烧结密度由5.63 g/cm~3增至5.86 g/cm~3);
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     Conclusion LASIK is scatheless to cornea endothelial cells,and can’t bring modality change and density decrease.
     结论 L ASIK手术对角膜内皮细胞无损伤,不会造成角膜中央部内皮细胞形态改变和密度降低
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     When ethanol concentration decreases from 50% to 20% or increases to 80%,on the other hand,the reduced viscosity decreases accordingly,the ESR parameter g ∥ decreases and A ∥ increases,the charge density decrease,and the chain becomes rather crinkly molecular conformation,resulting in higher catalytic activity in oxidation of hydroquinone.
     当乙醇含量从50%减至20%或增至80%时,溶液的比浓粘度相应减小,其ESR波谱参数g∥值减小,A∥值增大,络合物链上的电荷密度降低,因而大分子链比较卷曲,呈收缩构象,致使催化氢醌氧化活性增大
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     The main effects of activity of grazing are that it can make Scarabaeoidae larvae density decrease.
     金龟总科昆虫幼虫群落对长期持续放牧扰动的响应主要表现为密度降低 ,特别是东方绢金龟种群密度降低 .
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     These results indicate that cardiac β-receptor density decrease remarkabley in aged rats.
     本文结果显示,衰老大鼠心肌β受体密度降低,中药枸杞子可使之升高。
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  density decreases
     It is found that the textures of cold-rolled TRIP steel consisted of { 112} <110> , {001 } <110> , { 332 } <113> components, and { 112 } < 110> density decreases, {001 } <110> disappears after heat treatment.
     冷轧TRIP钢的主要取向为{112}<110>,以及{001} <110>和{332}<113>,而热处理后{112}<110>密度降低,同时{001}<110>消失。
     It is confirmed that with the increase of Gd2O3 addition, lattice parameter increases and sintering density decreases.
     结果表明,Gd2O3掺杂使得NiZn铁氧体材料的晶格常数增大,烧结密度降低
     The hardness of Al-Pb composite powders increases and its compact density decreases with milling time increasing.
     随球磨时间延长,Al-Pb复合粉的硬度增大,压制密度降低
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     However, the density decreases as injection temperature increases, the strength keeps almost constant when the barrel temperature is between 165℃~170℃ and decreases sharply when the barrel temperature reaches to 175℃.
     注射温度增高 ,生坯密度降低 ,注射温度在 165℃~ 170℃之间时 ,成形坯抗弯强度变化不大 ,175℃时明显下降 ;
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     TSH cells cytoplast evacuate secretory granules; electron density decreases and large vacuoles appeare.
     TSH细胞胞质中分泌颗粒排空,电子密度降低,出现大空泡;
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  “密度降低”译为未确定词的双语例句
     Applying resveratrol and 8Br-cGMP simultaneously decreased the ICa-L significantly by 87.58%±3.49%(n=6,P<0.05).
     L-18B r-cGMP+50μmol. L-1白藜芦醇使ICa-L电流密度降低87.58%±3.49%(n=6,P<0.05);
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     In November,the mean cell abundance of phytoplankton was 1.27×107 cells?
     11月浮游植物平均细胞密度降低到1.27×107cells?
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     CT attenuations for liver density of review CT was(57±8 )Hu significantly higer than of initial CT which was(47±10)Hu(P<0.05) .
     复查CT显示肝脏密度为(57±8)Hu,发病初显示肝脏密度降低,CT值为(47±10)Hu,两者相比差异有显著性(P<0.05);
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     Furthermore, there was a reverse correlation between the expression of VEGF and S100~+ DC (r=-0.817, P<0.05).
     随着癌组织内VEGF表达量的上升,S-100+DC的密度降低,二者呈负相关(r=-0.817,P<0.05)。
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     The amplitude densities of N 1 wave and P 1 wave were greatest at the central fovea, they were (44 88±13 30) nV/deg 2, (70.90±17.77) nV/deg 2 respectively, the densities reducing towards more peripheral location.
     N1波和P1波振幅密度降低 ,个体间变异较大 ,在中央凹N1波和P1波的振幅密度最大 ,分别为 (4 4 88± 13 30 )nV/deg2 、(70 90± 17 77)nV/deg2 ;
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  density decreased
Results indicated that bird richness was higher, per unit area, in the smaller woodlots than the larger ones, and overall bird density decreased with the increase in the size of woodlot.
      
It was established that the taxonomic diversity increased and population density decreased with an increase in the concentration of 137Cs.
      
The statistical processing of the data for solar cycles 20-22 demonstrated that the density decreased by 4.6% over ten years and by 9.9% over 20 years.
      
As a result of gettering, the charge carrier density decreased to 108-1010 cm-3, while the mobility increased to 7000 cm2/(V s).
      
The maximum time during which the plasma density decreased e-fold, τp, was found to be 300 μs at Bbar = 0.1 T, which agrees with the classical transport model.
      
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  density decrease
However, even a strong magnetic storm on April 6-7, 2000 (max Kp = 9-and min Dst ~ -290 nT), but accompanied by an isolated AE impulse, resulted in a density decrease only in the longitudinally limited post-midnight sector of the plasmasphere.
      
In such channels the gas density decrease due to friction is compensated by the increase of the cross-sectional area so that the velocity and temperature profiles remain unchanged at all sections of the channel.
      
It is shown that, for low electron temperatures, the solutions describe a regime in which the electric potential and electron density decrease monotonically toward the dielectric wall (a classical Debye layer).
      
Difference Fourier analysis between these data revealed electron density decrease of 2.1 e?-3 at the trivalent site occupied 64% by Cr3+, the absorbant; while the calcium, silicon, and oxygen sites remained practically unchanged.
      
The rate of mean corneal endothelial cell density decrease stood at 5.0%.
      
更多          
  density decreases
This paper continues the series of papers [1-5] and generalizes the previous results to a proto-ring of magnetized plasma whose density decreases in the radial direction.
      
In the present investigation, the density distribution behind a shock wave propagating through a gas at rest in which the density decreases (but the pressure is constant) was measured.
      
It is demonstrated that, at temperatures close to the glass transition point of the inhomogeneity regions, their density decreases with a decrease in the temperature.
      
The mean density decreases with increasing size considerably faster than L-1, so the column density also decreases.
      
The dust-envelope density decreases as the Mira's temperature increases.
      
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The ultrastructural changes of liver cells were observed from 5 minutes to 4

小白鼠肝脏局部受100倫琴与500倫琴剂量的X射綫照射后,在5分钟至4小时內观察了肝細胞亚显微結构的变化。变化最早在100倫琴照射后半小时与500倫琴照射后10分钟內发現。最先出現的变化是內质网扩張,其次是綫粒体基质局灶性致密度降低,溶酶体数量增加,最后才是核內染色质物质凝聚,以及內质网进一步空泡化和綫粒体肿脹。在恢复过程中,核最早恢复正常,綫粒体其次,內质网与溶酶体最后。文中对上述結果进行了討論。

The growth and Shrikaga of OISF in dislocatio-frree P-type (100) Sillcon Wafers have been investigated. The length of the stacking fault was giuenby where n and E are, respectively, 0.62 and (2.08+0.2)ev for dry oxidation and 0.8 and (2.11 + 0.1) ev for wet oxidation. Growing Process of the surface stacking faults has been observed by S-450 scanning electron microscope.The stacking faults grown into silicon during thermal oxidation were shrunk by high temperature heat-treatment in a nitrogen atmosphere or in...

The growth and Shrikaga of OISF in dislocatio-frree P-type (100) Sillcon Wafers have been investigated. The length of the stacking fault was giuenby where n and E are, respectively, 0.62 and (2.08+0.2)ev for dry oxidation and 0.8 and (2.11 + 0.1) ev for wet oxidation. Growing Process of the surface stacking faults has been observed by S-450 scanning electron microscope.The stacking faults grown into silicon during thermal oxidation were shrunk by high temperature heat-treatment in a nitrogen atmosphere or in C2HCl3/O2atmosphere. The activation energy for fault shrinkaga was 3.55ev and 4.37ev for C2HCl3/O2 atmosphere and a nitrogen atmosphere respectively. OISF are not generated when C2HCl3 are Properly appended in dry oxygen. If surface damage is removed by chemical polish or the samples are treated in dry nitrogen at high temperature before oxidation, the density of OISF can be reduced by 2-3 orders.

本文对P型(100)无位错硅晶片的热氧化堆垛层错长度生长和收缩规律进行了研究.给出层错长度、氧化时间,氧化温度之间的关系为L=kt~nexp(~-E/KT).对于干氧氧化,n和E分别为0.62和2.08±0.1ev;对于湿氧氧化,n和E分别为0.8和2.11±0.2ev.用S—450扫描电子显微镜对层错的生长过程进行了观察.热氧化长入硅中的层错分别在高温干氮气氛中和C_2HCI_3/O_2气氛中热处理时收缩、测得相应的层错收缩激活能分别为4.37ev和3.55ev.在干氧中加入洽当的C_2HCI_3氧化,可完全不产生氧化层错.在氧化前硅片用化学抛光处理或在干N_2中热处理能将层错密度降低2—3个数量级.

An investigation has been made on the influence of growth Condition upon the morphology, growth rate, dislocation's density, saucer pits density, nitrogen concentration and minority carrier life-time of expitaxial GaP layers,It is shown that the nitrogen concentration and the minority carrier life-time in the epilayer increase with increasing temperature of initiating growth. The nitrogen concentration in the epilayer grown at 1037*-980*C using GaN ar the nitroen source was not in-creased beyond the level 5.6×1017cm-3....

An investigation has been made on the influence of growth Condition upon the morphology, growth rate, dislocation's density, saucer pits density, nitrogen concentration and minority carrier life-time of expitaxial GaP layers,It is shown that the nitrogen concentration and the minority carrier life-time in the epilayer increase with increasing temperature of initiating growth. The nitrogen concentration in the epilayer grown at 1037*-980*C using GaN ar the nitroen source was not in-creased beyond the level 5.6×1017cm-3. In the epilaycr grown at 995°-900℃ on tbe IEC GaP suba-trate(τm≈5ns)The minority carrier life-time has been estimated to be-130ns. Dislocation's density does not vary and saucer pits density decreases by a factor of 10 in the epilayer as compared with these in the substrate. The experimental results are analysed.

本文研究了生长条件对GaP:N外延层的形貌、生长速率、位错密度、S坑密度、氮浓度、少子寿命的影响。实验表明,外延层中的氮浓度、少子寿命随外延生长起始温度的升高而增大。用GaN作为掺杂氮源,在1037—980℃温度范围生长的外延层中氮浓度不高于5.6×10~(17)cm~(-3);LEC GaP衬底(τ_m~5ns)上在995—900℃温度范围生长的外延层,其少子寿命可达~130ns。外延层中的位错密度和衬底中大体相同,但S坑密度降低一个数量级。

 
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