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取样门
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  sampling gate
     Design and simulation of 100 ps transient sampling gate based on high speed Schottky diode
     基于高速肖特基二极管的100 ps瞬态取样门设计与仿真(英文)
短句来源
     The circuit simulation shows that the symmetric strobe design ensures that the sampling interval is 100 ps and the sampling gate bandwidth is 4.4 GHz when the strobe pulse width is 100 ps. The gate can be used in multi-beam ultrashort laser pulses sampling.
     电路仿真结果表明,对称的选通设计保证了选通脉宽为100 ps时,取样间隔也为100 ps,取样门带宽为4.4 GHz,可应用于多路超短激光脉冲取样。
短句来源
     The picosecond transient sampling gate is mainly applied in laser fusion and high energy physics experiments for single high-speed pulse real-time sampling.
     皮秒级瞬态取样门主要应用于激光聚变实验和高能物理实验中,对单次高速脉冲进行实时取样。
短句来源
     FREQUENCY CHARATERISTIC OF SINCLE TUBE SAMPLING GATE ACTED BY TRAPEZOIDAL SAMPLING PULSE
     梯形取样脉冲作用下单管取样门的频率特性
短句来源
     A new balanced sampling gate based on monolithic Schottky bridge quad diodes is put forward in this paper as well as its model and circuit design.
     提出了一种新颖的基于肖特基二极管桥的平衡取样门,给出其模型和具体电路设计。
短句来源
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  “取样门”译为未确定词的双语例句
     As for ICA, the pulsed Doppler gate should be set at the point 1 cm distal from the end of bulb rather than from bifurcation, due to the prolongation and bulging the bulb, and the complex flow pattern not reflecting the typical hemodynamics of the internal carotid artery.
     本文还描述了各测值的测量方法,提出颈内动脉脉冲多普勒取样门应置于颈动脉窦部末端1cm以远,而不是距分叉处1cm以远,因此处颈动脉窦往往尚未完全结束,血管仍处于膨大状态,血流模式复杂,不能正确反映颈内动脉血流动力学情况。
短句来源
     The Analysis of Gating Diode Characteristics Influence on Properties Of Microwave Sampler
     取样门管的特性对微波取样器性能影响的分析
短句来源
     Electron beam testing technique utilities electron beam pulses as sampling gates, and the temporal duration is hundreds of femtosconds, but because the influence of the transit time effect of the secondary electrons, its testing bandwidth is about 24GHz.
     电子束脉冲作为取样门,持续时间在数量级上达到了飞秒的上百倍,但是它的测量带宽却受到了二次电子传输时间效应的限制,因此它的测量带宽大约为24GHz。
短句来源
     Including the effect of the "kick-out" impulse, which is caused by the changment of the key parameters in the sampler circuit, and the argumentation about the unbalance of the sample caused by the asymmetry of the key parameters.
     第一、对单台取样示波器的取样头进行了计算机仿真实验,内容包括取样门电路中关键参数对“kick-out”脉冲的影响,并且就关键参数的不对称而造成取样门平衡性被破坏的情况进行了讨论。
短句来源
     The conclusion that the suppression of fixed frequencies is in proportion to the number of equivalent accumulations m and that of narrow-band noise is in proportion to m~1/2, but that of the broad-band noise is not related. with m, is obtained.
     讨论了不同的取样门宽、不同的输入白噪声带宽时的信噪比改善情况,得到了门积分电路对固定频率干扰的抑制能力与等效积累次数m成正比,对窄带噪声的抑制能力与m~(1/m)成正比,对宽带白噪声的抑制能力与m无关的结论。
短句来源
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  相似匹配句对
     DOOR
    
短句来源
     The Door
    
短句来源
     Discussion on Samping Gate-Width
     关于取样宽的讨论
短句来源
     Analysis of Perfermances of Single Tube Sampling Gate
     单管取样的特性分析
短句来源
     Multi-Sampling Effect
     多次取样效应
短句来源
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  sampling gate
The WI unit gives the instantaneous change in diameter of the artery and the instantaneous mean blood velocity through the sampling gate.
      
The modulation bandwidth and noise limit of a photoconductive sampling gate are studied by reducing the parasitic capacitance and leakage current of the sampling circuit using an integrated junction field-effect transistor (JFET) source follower.
      
The modulation bandwidth of the photoconductive sampling gate is limited by the external parasitic capacitance, and its efficiency is found to saturate at a laser gating power of about 1 mW.
      
It is determined that the noise of the photoconductive sampling gate is dominated by the photovoltaic current due to the gating laser amplitude fluctuation.
      
A minimum noise level of 4 nV Hz-1/2 has been measured, and an enhancement in signal-to-noise ratio by a factor of >amp;gt;45 has been achieved after the integration of the source follower with the photoconductive sampling gate.
      
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The present article describes a transistor sampling oscilloscope which has an effective bandwidth greater than 1000 Me. The circuit of the oscilloscope mainly consists of sampling pulse generator, sampling gate and comparator. All the transistor employed are selected from normal drift divices. In this circuits) microwave crystal detectors is adopted for the sampling gate.The problem of generating sampling pulse by avalanche transistor and the technique of realizing wide bandwidth are given in some detail. The...

The present article describes a transistor sampling oscilloscope which has an effective bandwidth greater than 1000 Me. The circuit of the oscilloscope mainly consists of sampling pulse generator, sampling gate and comparator. All the transistor employed are selected from normal drift divices. In this circuits) microwave crystal detectors is adopted for the sampling gate.The problem of generating sampling pulse by avalanche transistor and the technique of realizing wide bandwidth are given in some detail. The stability of sampling process is also analysed. Short pulses with rise time less than 0.5 millimicrosecond and pulse-modulated high frequency waves up to 1000 Me are observed with this sampling oscilloscope. Finally; further improvement on the electrical characteristics of this oscilloscope are discussed.

本文介绍一种宽频的晶体管取样示波器,它的有效频宽在1000兆赫以上。取样示波器由比较器,取样脉冲发生器,取样门等部件组成。设备采用了普通的漂移晶体管和微波晶体检波器。本文讨论了应用雪崩晶体管作为取样脉冲和实现宽频取样门的问题,并且分析了取样的稳定度。应用本仪器曾观察上升时间约0.5毫微秒的快速脉冲和脉冲调制的100兆赫正弦振荡波形。最后,对本仪器的改进提出初步意见。

This Paper describes the sampling gate-width of Sampling phase-lockedmicrowave source. The relation between phase-detector efficiency andsampling gate-width is given. A method for calculation of sampling gate-width is presented. Finally some results of experiment of x-band sam-pling phase-locked microwave source are derived.

本文讨论了取样锁相微波源中的取样门宽。推导了鉴相效率与取样门宽之间的关系,并给出计算取样门宽的方法。最后,列举了工作于x波段的取样锁相源的一些实验结果。

A sample and hold circuit with 8-hit capacity to be used to drift chamber read out electronics is described. It's integral nonlinearity is better than 0.5% for input pulse with 0—4V amplitude. Sampling error is about 1% with acquisition time of 80 ns. The drop of recorded signal is leas than 1% in retention time of 40 ms.

本文描述用于漂移室读出电路的一台具有8次击中能力的取样-保持电路。输入电压脉冲0~+4伏时,积分线性优于9.5%。取样门宽80纳秒时,取样精度达~99%。保持时间40毫秒时,下降不大于19%。

 
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