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散射时间
相关语句
  scattering time
    EFFECT OF ELECTRON-MANY PHONON INTERACTION ON SCATTERING TIME
    电子多声子作用对散射时间的效应
短句来源
    Following Schommers' viewpoint of time,we define the time,espe- cially the scattering time and the resonance scattering time which character light scattering by a quantum system.
    本文发展了Schommers的时间观点,定义了时间,尤其是表征量子系统光散射的散射时间和共振散射时间
短句来源
    The relation between the spin-orbit scattering time and the temperature is discussed for 2DEG, the inelastic scattering time measured by experiment shows a strong temperature dependence according to T~ -1 rule, which indicates that the electron-electron scattering with small energy transfer is the dominant inelastic process.
    同时讨论了二维电子气中不同的散射时间对温度的依赖关系,实验得到的非弹性散射时间与温度成反比,表明非弹性散射机理主要来源于小能量转移的电子-电子散射.
短句来源
  “散射时间”译为未确定词的双语例句
    4. The ultrafast absorption spectra of ZnSe nanocrystal indicate that the time of electron-electron scattering is 6.6 ps (for the average size of nanocrystal ~ 75 nm) and 2.5 ps (45 nm).
    4.对在溶液中的Znse纳米颗粒的超快吸收谱的研究表明,电子一声子散射时间为6.6Ps(纳米颗粒的平均尺寸为75nm)、2.SPs(4 snln)。
短句来源
    The temporal feature of x-ray laser plasma density was observed from the 3ω0/2、2ω0 harmonic emission in the experiments.
    本文简单介绍了在X光激光实验中,用3ω_0/2、2ω_0谐波散射时间谱来观察X光激光等离子体密度的时间特性。
短句来源
    With the decrease of nanocrystal, the probability of inelastic collision among carriers and nanocrystal surface increases, which results in the intension of carrier-photon coupling enhances and the time of carrier-photon scattering shortens.
    随着纳米颗粒尺寸的减小,载流子与颗粒表面的非弹性碰撞几率增加,从而使载流子一声子祸合的强度增强,导致载流子一声子散射时间缩短。
短句来源
    It is found that the corrections of the conductivities including the intervalley impurity scattering is half as large as those which only involving the intravalley scattering. The crossover effect of dimensionality from 2-D to 3-D in the system have been studied. It is shown that the crossover behaviour depend on
    并且发现在计及等能谷间杂质散射时,电导率修正比只考虑谷内杂质散射时小一半,我们研究了层伏系统从二维过渡到三维的跨越维数效应,发现跨越行为依赖于谷间散射时间t’,当t<1/τ(τ_0/τ')~(1/2)时,系统具有二维行为,反之系统具有三维特征。
短句来源
    The expression of Cooperon (propagator in particle particle channel) is obtained as the function of interlayer coupling. The analytical result for the quantum correction to Hall conductivity has been obtained as functions of elastic, inelastic and spin orbit scattering times.
    得到作为层间耦合函数的Cooperon(粒子粒子通道的传播函数 )的表达式 ,以及对Hall电导率量子相干修正的解析表达式 ,它是弹性、非弹性和自旋轨道散射时间的函数 .
短句来源
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  scattering time
One feature distinguishing organic superconductors from magnetically ordered metals is a stronger temperature dependence of the characteristic electron-phonon scattering time τe-ph(T).
      
At higher temperatures T >amp;gt; Tmax, the dependence ρxy(T) can be qualitatively explained by both the temperature dependence of the scattering time and the thermal activation of carriers from the band of localized states.
      
This observation suggests a sharp decrease in the inelastic scattering time in the case of a Ge1-xSix solid solution as compared to that of Ge.
      
The relation between the electrodynamic parameters (reflection, absorption, and transmission coefficients) and the characteristics of the semiconductor material (carrier density, carrier mobility, and scattering time) is determined.
      
It is shown that the broadening of a cyclotron resonance line in a two-dimensional (2D) electron system relative to the inverse scattering time of electrons is connected with the radiative damping accompanying the cyclotron motion of electrons.
      
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By using of the nonlinear luminescence correlation technique, a new time resolved optical spectroscopy technique has been developed and applied to investigating of hot carrier relaxation processes in GaAs-GaAlAs multiple quantum well structures. It has been found that the well width has a significant effect on the relaxation processes. For a sample with L_z=40A,, the time constant of the LO-phonon relaxation was found to be as long as 40ps. The physical me-chanism of this weakened electron-phonon interaction...

By using of the nonlinear luminescence correlation technique, a new time resolved optical spectroscopy technique has been developed and applied to investigating of hot carrier relaxation processes in GaAs-GaAlAs multiple quantum well structures. It has been found that the well width has a significant effect on the relaxation processes. For a sample with L_z=40A,, the time constant of the LO-phonon relaxation was found to be as long as 40ps. The physical me-chanism of this weakened electron-phonon interaction is also discussed.

将微微秒非线性光学相关技术发展成一种新的微微秒时间分辨光谱技术,并用它研究了GaAs-GaAlAs多量子阶结构中非平衡载流子的弛豫过程,讨论了非平衡电子系统能量损耗的机理,给出了电子-声子散射的时间常数。

The electrical resistivity and magnetoresistance of amorphous Cu_(33)Y_(67) alloy has been measured. The alloy was prepared by melt-spinning in He gas.

文中报道非晶Cu_(33)Y_(67)低温电阻和磁阻的测量结果。这种合金是在He气氛中以熔化-自旋技术制备的。相互作用效果可以为4.5K以下的低温电阻提供一个-T~(1/2)形式的贡献。在稍高的温度,其变化规律也可以通过相互作用和弱定域化的联合来解释。上至1.8T的磁阻测量揭示出一个具有自旋-轨道散射较强影响的弱定域化效果。Cu_(33)Y_(67)的磁阻测量值比弱定域化预言的大。如果把弱定域化的理论预言强度增大3倍,则可以在整个测量磁场范围内与实验值拟合。自旋-轨道散射时间τ_(50)和非弹性散射时间τ_i作为两个拟合参量。τ_(50)不随温度变化,而从对电阻和磁阻分别拟合所确定的τ_i与温度关系是互相符合的。

This paper studies the influence of intervally impurity scattering on the condu-ctivities of the disordered layer system. The corrections of the conductivities for the effective dimensionality in the system which depend on the interlayer coupling t are obtained. It is found that the corrections of the conductivities including the intervalley impurity scattering is half as large as those which only involving the intravalley scattering. The crossover effect of dimensionality from 2-D to 3-D in the system have...

This paper studies the influence of intervally impurity scattering on the condu-ctivities of the disordered layer system. The corrections of the conductivities for the effective dimensionality in the system which depend on the interlayer coupling t are obtained. It is found that the corrections of the conductivities including the intervalley impurity scattering is half as large as those which only involving the intravalley scattering. The crossover effect of dimensionality from 2-D to 3-D in the system have been studied. It is shown that the crossover behaviour depend on

本文研究了等能谷间杂质散射对无序层状系统电导率的影响,求得了依赖于平面间耦合t的系统的有效维数的电导率修正。并且发现在计及等能谷间杂质散射时,电导率修正比只考虑谷内杂质散射时小一半,我们研究了层伏系统从二维过渡到三维的跨越维数效应,发现跨越行为依赖于谷间散射时间t’,当t<1/τ(τ_0/τ')~(1/2)时,系统具有二维行为,反之系统具有三维特征。

 
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