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散射时间
相关语句
  scattering time
    The ultrafast absorption spectra of ZnSe nanocrystals indicate that the electron-electron scattering time is 8.74ps and 2.77ps for the average nanocrystal size of 75 and 45 nm,respectively.
    对在溶液中的ZnSe纳米颗粒的超快吸收谱的研究表明,当纳米颗粒的平均尺寸为75nm时,电子声子散射时间为8.74ps; 当平均尺寸为45nm时,散射时间为2.77ps.
短句来源
    We extrapolate that the second subba nd starts to be populated at the concentration of about 7 2×10 12cm -2 .In the study of the quantum scattering time,we conclude that the remote donor sattering is the dominant scattering mechanism contributing to the quantum scat tering time.
    通过电子子带占据时电子浓度分配的线形行为得到第二子带被占据的阈值浓度为 7 2× 1 0 12 cm-2 。 通过对不同样品量子散射时间和输运迁移率的研究 ,说明在 1 5K下远程离化施主散射在量子散射时间中起主要作用。
短句来源
    With the decrease of the size of nanocrystal,the probability of inelastic collision among carriers and nanocrystal surface increases,resulting in the enhancement of the carrier-phonon coupling strength and the shortening of the carrier-photon scattering time.
    随着纳米颗粒尺寸的减小,载流子与颗粒表面的非弹性碰撞几率增加,从而使载流子声子耦合的强度增强,导致载流子声子散射时间缩短.
短句来源
  scattering time
    The ultrafast absorption spectra of ZnSe nanocrystals indicate that the electron-electron scattering time is 8.74ps and 2.77ps for the average nanocrystal size of 75 and 45 nm,respectively.
    对在溶液中的ZnSe纳米颗粒的超快吸收谱的研究表明,当纳米颗粒的平均尺寸为75nm时,电子声子散射时间为8.74ps; 当平均尺寸为45nm时,散射时间为2.77ps.
短句来源
    We extrapolate that the second subba nd starts to be populated at the concentration of about 7 2×10 12cm -2 .In the study of the quantum scattering time,we conclude that the remote donor sattering is the dominant scattering mechanism contributing to the quantum scat tering time.
    通过电子子带占据时电子浓度分配的线形行为得到第二子带被占据的阈值浓度为 7 2× 1 0 12 cm-2 。 通过对不同样品量子散射时间和输运迁移率的研究 ,说明在 1 5K下远程离化施主散射在量子散射时间中起主要作用。
短句来源
    With the decrease of the size of nanocrystal,the probability of inelastic collision among carriers and nanocrystal surface increases,resulting in the enhancement of the carrier-phonon coupling strength and the shortening of the carrier-photon scattering time.
    随着纳米颗粒尺寸的减小,载流子与颗粒表面的非弹性碰撞几率增加,从而使载流子声子耦合的强度增强,导致载流子声子散射时间缩短.
短句来源
  “散射时间”译为未确定词的双语例句
    4. The ultrafast absorption spectra of ZnSe nanocrystal indicate that the time of electron-electron scattering is 6.6 ps (for the average size of nanocrystal ~ 75 nm) and 2.5 ps (45 nm).
    4.对在溶液中的Znse纳米颗粒的超快吸收谱的研究表明,电子一声子散射时间为6.6Ps(纳米颗粒的平均尺寸为75nm)、2.SPs(4 snln)。
短句来源
    Scattering mechanisms have been studied for low mobility GaAs/AlGaAs quantum well samples.
    本文研究了低迁移率GaAs/AlGaAs量子阱的散射机制。 由电导测量和Shubnikov de-Haas振荡曲线分别得到输运散射时间τ_0和弛豫时间τ_q(量子散射时间)。
短句来源
    With the decrease of nanocrystal, the probability of inelastic collision among carriers and nanocrystal surface increases, which results in the intension of carrier-photon coupling enhances and the time of carrier-photon scattering shortens.
    随着纳米颗粒尺寸的减小,载流子与颗粒表面的非弹性碰撞几率增加,从而使载流子一声子祸合的强度增强,导致载流子一声子散射时间缩短。
短句来源
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  scattering time
One feature distinguishing organic superconductors from magnetically ordered metals is a stronger temperature dependence of the characteristic electron-phonon scattering time τe-ph(T).
      
At higher temperatures T >amp;gt; Tmax, the dependence ρxy(T) can be qualitatively explained by both the temperature dependence of the scattering time and the thermal activation of carriers from the band of localized states.
      
This observation suggests a sharp decrease in the inelastic scattering time in the case of a Ge1-xSix solid solution as compared to that of Ge.
      
The relation between the electrodynamic parameters (reflection, absorption, and transmission coefficients) and the characteristics of the semiconductor material (carrier density, carrier mobility, and scattering time) is determined.
      
It is shown that the broadening of a cyclotron resonance line in a two-dimensional (2D) electron system relative to the inverse scattering time of electrons is connected with the radiative damping accompanying the cyclotron motion of electrons.
      
更多          
  scattering time
One feature distinguishing organic superconductors from magnetically ordered metals is a stronger temperature dependence of the characteristic electron-phonon scattering time τe-ph(T).
      
At higher temperatures T >amp;gt; Tmax, the dependence ρxy(T) can be qualitatively explained by both the temperature dependence of the scattering time and the thermal activation of carriers from the band of localized states.
      
This observation suggests a sharp decrease in the inelastic scattering time in the case of a Ge1-xSix solid solution as compared to that of Ge.
      
The relation between the electrodynamic parameters (reflection, absorption, and transmission coefficients) and the characteristics of the semiconductor material (carrier density, carrier mobility, and scattering time) is determined.
      
It is shown that the broadening of a cyclotron resonance line in a two-dimensional (2D) electron system relative to the inverse scattering time of electrons is connected with the radiative damping accompanying the cyclotron motion of electrons.
      
更多          


Scattering mechanisms have been studied for low mobility GaAs/AlGaAs quantum well samples.

本文研究了低迁移率GaAs/AlGaAs量子阱的散射机制。由电导测量和Shubnikov de-Haas振荡曲线分别得到输运散射时间τ_0和弛豫时间τ_q(量子散射时间)。在GaAs/AlGaAs量子阱中,τ_0≈τ_q;而在调制掺杂的异质结中,τ_0》τ_q。用量子阱、异质结中起支配作用的散射机构不同很好地解释了实验结果。本文还研究了弱磁场下量子阱的负磁阻效应,这是磁场抑制了电子局域态的结果。

Following the work of the simulation for GaAs submicron device with Monte Carlo particle method,this paper uses the same way to simulate silicon submicron MESFET.In addition to deal with different scattering mechanisms in silicon,advanced concepts and methods,such as FFT(Fast Fouier Transfomation) and fast self-scattering,have been used.It to some extent overcomes the disadvantage of Monte Carlo method.Much computer time has been saved.The results of the simulation demonstrate the performance of silicon MESFET....

Following the work of the simulation for GaAs submicron device with Monte Carlo particle method,this paper uses the same way to simulate silicon submicron MESFET.In addition to deal with different scattering mechanisms in silicon,advanced concepts and methods,such as FFT(Fast Fouier Transfomation) and fast self-scattering,have been used.It to some extent overcomes the disadvantage of Monte Carlo method.Much computer time has been saved.The results of the simulation demonstrate the performance of silicon MESFET.

本文是继用MonteCarlo法模拟GaAs亚微米器件后,进一步用该法模拟Si亚微米MESFET。文中除了处理Si和GaAs散射机制不同外,在模拟方法上有重要进步:用FFT(FastFourierTransformation)代替迭代法,加速解Poisson方程过程;用快速自散射代替常规自散射,压缩计算无用自散射时间。这些进步相当程度地克服MonteCarlo微粒模拟法费机时的固有缺点。模拟得到的形象且合理的结果,给出亚微米栅长时SiMESFET的性能。

Stimulated Builluin scattering (SBS) excited by directly pump method and pass through grating pump method is investigated Temporal characteristic of the SBS has been studied experimentally and theoretically and the two pump methods have been compared.

报道了直接泵浦法和经光栅泵浦法激励的受激布里渊散射的时间特性并比较了两种泵浦方法的受激布里渊镜反射率。

 
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