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数值模拟器
相关语句
  numerical simulator
     NUMERICAL SIMULATOR OF CAPACITANCE MATRIX FOR NANO-ELECTRONIC SYSTEM
     纳米电子系统中电容矩阵的数值模拟器
短句来源
     The simulated results by this model are consistence with the results obtained by numerical simulator MINIMOS.
     模拟的结果能很好地与数值模拟器 MINIMOS的结果符合
短句来源
     5. A numerical simulator is developed by Fortran 90 , the idea of high modularization and high structuralization are adopted in the program , which has perfect structure and high calculation efficiency, and it is easy to be maintained and be extended.
     5.利用Fortran90编制了一个数值模拟器,该模拟器采用高度结构化和模块化的设计思想和方法,结构严谨,计算效率高,便于维护和扩充。
短句来源
     3. A numerical simulator is established by Fortran 90, the idea of high modularization and high structuralization are adopted in the program, which has perfect structure and high calculation efficiency, and it is easy to be maintained and be extended.
     3.利用Fortran90编制了一个数值模拟器,该模拟器采用高度结构化和模块化的设计思想和方法,结构严谨,计算效率高,便于维护和扩充;
短句来源
     Analyses are made on the quasi-saturation mechanisms of the LDMOS and the characteristics of the quasi-drain by using 2-D numerical simulator MEDICI.
     借助二维数值模拟器MEDICI,详细分析了LDMOS的准饱和特性产生机理,以及准漏极(quasidrain)的相关特性;
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     The mechanism of percolation in low-permeability gas reservoir is analyzed. The nonlinear percolation mathematic model to both gas and water is then developed. Furthermore, the related numerical and simulation models and simulator are established, considering the concept of gas relative permeability with the slippage effect.
     通过对低渗透气藏渗流机理的分析,建立了低渗透气藏气-水两相流动非线性渗流数学模型,同时引入考虑滑脱效应的气相相对渗透率概念,建立了相应的数值模型和模拟模型,并根据所建数学模型及其数值解法,编制了考虑气体滑脱效应的低渗透气藏气-水两相渗流数值模拟器
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     This dissertation aims at the developing of SiCGe/SiC light-activated Darlington tansistor. in which the researth work included design of device struction, the fabrication of SiCGe/SiC Heterojunction and characteristics of SiCGe/SiC Heterojunction.
     1.利用二维数值模拟器MEDICI,在首先完成了对新型器件设计构想的可行性验证之后,从器件制造的可行性出发,提出了几种改进的器件结构,改SiCGe/SiC异质结达林顿晶体管设计为SiCGe/SiC异质结光电二极管与SiC达林顿晶体管单片集成,大大简化了器件制造工艺。
短句来源
     Using Fortran 90 suiting for powerfulcomputation and VC++ with powerful ability dealing with graphics and images, anumerical reservoir simulator considering the physical property changes of oil formationpercolation system is developed.
     对所建数学模型进行了解析求解和数值求解,应用适合大型数值运算的FORTRAN 90和具有强大图形图象功能的VC++两种计算机语言,开发了渗流系统物性变化油藏数值模拟器
短句来源
     (3) For the existing conventional numerical simulators can not simulate this type of reservoir effectively, based on flow equations, the different flow characteristics between the fracture-cavern and fracture-matrix dual-porosity media are analyzed.
     3、由于现有常规商业数值模拟器不能有效模拟缝洞型油藏,从渗流方程入手,分析了缝洞型双重介质与常规裂缝.基质型双重介质渗流特征之间的差别。
短句来源
     Based on the two dimensional simulator MINIMOS and consideringthe different boundary conditions,input/output format as well as the concentration distributionof the lightly doped region,a new program FD-MINIMOS which is not only suitable forconventional MOSFET but also for the LDD MOSFET is presented. The preformance of de-creasing the channel electric field and the substrate current for LDD MOSFET can be wellsimulated by using FD-MINIMOS.
     为了有效地进行LDD MOSFEI的优化设计,我们在二维数值模拟器MINIMOS的基础上,修改了边界条件及输入输出格式,考虑了轻掺杂区的杂质分布,研制成功了一种既适用于常规以MOSFET,又适用于LDD MOSFET的二维数值模拟程序FD-MINIMOS.
短句来源
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     The numerical results show that the simulator is feasible.
     数值结果表明模拟器是可行的。
短句来源
     The Design of the 2-dimensional Numerical Simulator of SOI MOSFET
     SOIMOSFET二维数值模拟器的设计
短句来源
     Flight Simulator
     飞行器模拟器
短句来源
     BLACKBODY SIMULATOR
     黑体模拟器
短句来源
     The computational result is compared with G.
     数值结果和G.
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  numerical simulator
The numerical simulation process was codified into a stand-alone numerical simulator using the JavaTM Programming language.
      
Numerical examples obtained from the numerical simulator are presented to show the applicability of the computational technique and to investigate the effects of interfacial coupling and hydrodynamic effects.
      
We developed a new numerical simulator of gamete behavior using C++ and pseudo-parallelization methods to elucidate potential advantages of phototaxis.
      
The control laws are derived by using a simplified attitude model and are then implemented in a three-dimensional numerical simulator, which simultaneously integrates the orbital and attitude equations.
      
In addition, an oil field example with five-spot patterns was made on the numerical simulator.
      
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Using simulator as an aided tool for LDD MOSFET disign, the cycle and cost can con-siderably be decreased.Based on the two dimensional simulator MINIMOS and consideringthe different boundary conditions,input/output format as well as the concentration distributionof the lightly doped region,a new program FD-MINIMOS which is not only suitable forconventional MOSFET but also for the LDD MOSFET is presented.The preformance of de-creasing the channel electric field and the substrate current for LDD MOSFET can be...

Using simulator as an aided tool for LDD MOSFET disign, the cycle and cost can con-siderably be decreased.Based on the two dimensional simulator MINIMOS and consideringthe different boundary conditions,input/output format as well as the concentration distributionof the lightly doped region,a new program FD-MINIMOS which is not only suitable forconventional MOSFET but also for the LDD MOSFET is presented.The preformance of de-creasing the channel electric field and the substrate current for LDD MOSFET can be wellsimulated by using FD-MINIMOS.The results of simulation also indicate that different lightdoping concentration has different effect to refrain the channel electric field.

轻掺杂漏(LDD)MOSFET是一种已用在VLSI中的新型MOSFET结构.为了有效地进行LDD MOSFEI的优化设计,我们在二维数值模拟器MINIMOS的基础上,修改了边界条件及输入输出格式,考虑了轻掺杂区的杂质分布,研制成功了一种既适用于常规以MOSFET,又适用于LDD MOSFET的二维数值模拟程序FD-MINIMOS.应用该程序对LDD MOSFET的一系列直流特性模拟的结果表明,不同的轻掺杂浓度对于抑制沟道电场及热电子效应具有不同的效果,为轻掺杂区优化设计提供了重要信息.

in this paper,a physical model of grain boundaries is presented to explain the low value of carrier mobility and the high value of threshold voltage for poly-silicon thin film transistors (TFT).A software package, called TFTMPE,is developed,which consists of a two dimensional numerical simulator and a model parameter extractor,it can be applied to the analysis and design of poly silicon TFT.

提出了一个晶粒间界的物理模型,以解释多晶硅薄膜晶体管(TFT)的低载流子迁移率和高阈值电压.研制了多晶硅 TFT 的分析软件包TFTNPE,它包括两维数值模拟器和模型参数提取软件,可以用于多晶硅薄膜器件的分析与设计.

A self\|consistent two\|dimensional simulator for semiconductor quantum well lasers,POET,is developed.We have described the basic model,program flow and some major features.A GRIN\|SCH\|BH SQW laser is simulated as demonstration.

我们开发了一个半导体量子阱激光器的数值模拟器POET.本文介绍了该模拟器的基本模型、工作流程和一些主要特性,并演示了对掩埋异质结构渐变折射率分别限制异质结单量子阱激光器的模拟

 
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