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氧化物层
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  oxide layer
     Another fact is the formation of dense oxide layer mainly composed of mullite and Al 18 B 4 O 33 at higher temperature which acts as a barrier for oxygen diffusion.
     在较高温度下 ,硼硅酸盐玻璃中的SiO2 和B2 O3又能和MgAlON氧化产物中的α Al2 O3作用 ,形成由莫来石和Al18B4 O33构成的致密氧化物层 ,有效阻挡外界的氧向试样内部扩散
短句来源
     ACCUMULATION OF - 2 IN SURFACE COMPOSITE OXIDE LAYER OF CdS(T) AND ITS EFFECT ON PHOTOCATALYTIC ACTIVITY OF Pt/CdS(T)
     O_2~.在CdS表面复合氧化物层中的积聚及其对Pt/CdS(T)光催化活性的影响
短句来源
     It is quite evident that additional Au (>1ML) disturbs the As-O bond and produces stable Ga oxide which inhibits the Ga below the oxide layer into Au, but As is segregated onto Au
     微量的Au(<1ML)与O—GaAs之间只有微弱的相互作用. 随后淀积的Au破坏As—O键并促使形成较稳定的Ga的氧化物,Ga的氧化物层阻止Ga进入Au,但不能阻止As分聚于Au层的表面.
短句来源
     The results show that most of the ultrafine Fe particles are almost round and the Fe powder is composed of two phases. The core of Fe particle is α-Fe and it is wrapped by the oxide which is the mixture of Fe_3O_4 and r-Fe_2O_3. The thickness of the oxide layer takes up about 20% of the diameter of the whole particle.
     研究结果表明,多数超细铁粉粒子近似呈球形,并且,铁粉粒子由两相组成,粒子的核心部分是金屑a-Fe,表面的包裹层为氧化物层,它由Fe_3O_4和7-Fe_O_3的混合物组成。 氧化层的平均厚度大约占整个粒子直径的20%左右。
短句来源
     The results show that oxide scales are composed of a loose top layer consisted of oxides of Ti and Cr,compact intermediate layer Cr_2O_3,as well as discrete internal oxide layer of Al_2O_3.
     中间层是Cr2O3; 内氧化物层是A l2O3,并含有少量TiN.
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  “氧化物层”译为未确定词的双语例句
     Transmission electron microscopy (TEM) observations found that the transition zone is composed of a micro-crystalline oxide Fe(Al,Cr)2O4 or FeO·(Al,Cr)2O3 layer and a FeAl3 intermetallic layer.
     透射电镜(TEM)观察到过渡区是由微晶氧化物Fe(Al,Cr)_2O_4或FeO·(Al,Cr)_2O_3氧化物层和FeAl_3金属间化合物层组成
短句来源
     The IR analyses indicate that all vibrational modes change remarkably after PEO was intercalated into V2O5-MoO3xerogel interlayer.
     IR光谱分析表明,当PEO嵌入V_2O_5-MoO_3干凝胶层间时,V_2O_5-MoO_3的各振动模式发生显著变化,其中,V=O双键伸缩振动向低波数方向移动,说明PEO与氧化物层之间以M=O---O键结合。
短句来源
     A double scale was formed:the outer scale was mixture of Cr2O3 and TiO2 and the inner scale was continuous Al2O3.No internal oxidation and nitration were observed.
     氧化时形成双层的外氧化膜,表层为以Cr2O3和TiO2为主的混合氧化物层,内层为连续的Al2O3层;
短句来源
     Composite-metal-oxide pillared interlayered clay -PbTiO3-PILC and (Pbo.67Zno.33)-TiO3-PILC were prepared by sol-gel method.
     用溶胶—凝胶法制备了复合金属氧化物层柱粘土催化剂—PbTiO_3-PILC和(Pb_(0.67)Zn_(0.33))TiO_3-PILC。
短句来源
     This dissertation addresses the effects of doping with nano-nitride-layer (NNL) at the interfaces in the two structures: Cu/Co/Cu/Co/Cu and NiO/Co/Cu/Co/Cu.
     改变材料的界面状况来影响其磁电阻特性是一种重要的研究手段,这种方法目前已经在界面掺杂纯金属和纳米氧化物层方面取得重要进展,本文作为这方面的一个补充,首次尝试在Cu/Co/Cu/Co/Cu和NiO/Co/Cu/Co/Cu结构中,用纳米氮化物层剪裁材料的界面状况,获得了一些新的实验结果。
短句来源
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  相似匹配句对
     Lubricating Role of Oxides
     氧化物的润滑作用
短句来源
     EFFECT OF OXIDE LAYER ON THE PERFORMANCE OF Cr-MIS SOLAR CELLS
     氧化物对Cr-MIS太阳电池性能的影响
短句来源
     Preparation of Oxides
     氧化物的制取
短句来源
     A Study of Gas Sensing Properties of The Multilayer Oxide Thin Films
     多氧化物薄膜气体敏感特性的研究
短句来源
     Multi-Layer Switch
     多交换技术
短句来源
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  oxide layer
The Fe-abundant area is mostly an oxide layer of iron with a flaky distribution.
      
The kinetic analysis of the oxidation process is performed, and the possible mechanisms of the formation of an oxide layer are proposed.
      
In a film deposited on silicon covered with a natural oxide layer, a significant role is also played by charge redistribution between the substrate and metal particles.
      
Modern concepts on the operating mechanism of a passivating oxide layer are analyzed.
      
After a special digital treatment, the scanned optical images of a small surface area probed allow one to introduce and determine those parameters of the morphological nonuniformity of the thermal oxide layer which affect its protective ability.
      
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In this paper the effect of oxide layer on the performance of Cr-MIS solar cells is reported.The thickness of oxide layer is indicated which is a important parameter effecting on the performance of Cr-MIS solar colls.The experiments evidence that be-tter cell is obtained with about 30A oxide layer.Under 100mW/cm2 we have fabricated Cr-MIS solar cell on p-type single silicon which has yielded Voc up to 0.545V,Jsc up to 31.5 mA/cm2,FF up to 0.67,and η up to 11.5% (based on active area of 1.3 cm2).On the same conditions...

In this paper the effect of oxide layer on the performance of Cr-MIS solar cells is reported.The thickness of oxide layer is indicated which is a important parameter effecting on the performance of Cr-MIS solar colls.The experiments evidence that be-tter cell is obtained with about 30A oxide layer.Under 100mW/cm2 we have fabricated Cr-MIS solar cell on p-type single silicon which has yielded Voc up to 0.545V,Jsc up to 31.5 mA/cm2,FF up to 0.67,and η up to 11.5% (based on active area of 1.3 cm2).On the same conditions Cr-MIS solar cell on waste p-type single silicon is fabricated which has yielded Voc up to 0.54V,Jsc up to 28.3 mA/cm2,FF up to 0.64,and η up to 9.8% (based on active area of 3.14 cm2).

本文报道了氧化物层对Cr-MIS太阳电池性能的影响。实验证明,氧化物层厚度约30(?)的电池性能较好。在100mW/cm~2的光强下,有效面积为1.3cm~2的Cr-MIS单晶硅电池,V_(oc)、J_(sc)、FF和η分别为0.545V、31.5mA/cm~2、67%和11.5%。在同样光照条件下,有效面积为3.14cm~2的Cr-MIS废次单晶硅电池,V_(oc)、J_(sc)、FF和η分别为0.541V、28.3mA/cm~2、64%和9.8%。

(100) oriented either Cr-doped semi-insulating or n-type (n=1018cm-8) GaAs are etched by pH= 7±0.05 H2O2-NH4OH etchant at 5±l℃ and also washed by HCl:H2O = 1:1 or NH4OH:H2O = 1:10 solutions. The etching rate is influenced by stirring, and it is faster at the initial or at the first 250-500A etching. Analysis indicates that the diffusion of NH4OH toward the GaAs-solution interface is a most possible step limiting the etching process. It can be concluded from the measurement and analysis of residual oxidized layers...

(100) oriented either Cr-doped semi-insulating or n-type (n=1018cm-8) GaAs are etched by pH= 7±0.05 H2O2-NH4OH etchant at 5±l℃ and also washed by HCl:H2O = 1:1 or NH4OH:H2O = 1:10 solutions. The etching rate is influenced by stirring, and it is faster at the initial or at the first 250-500A etching. Analysis indicates that the diffusion of NH4OH toward the GaAs-solution interface is a most possible step limiting the etching process. It can be concluded from the measurement and analysis of residual oxidized layers that after etching there is a very thin residual oxide layer on the outermost surface, which is followed by a transition layer. The oxide and a part of the transition layer can be removed by aqueous solution of HC1 or NH4OH.

用pH=7±O.05的H_2O_2-NH_4OH溶液,在5±1℃,对晶句是(100)的高阻或浓度为2×10~(13)cm~(-3)的n型GaAs衬底进行腐蚀试验.发现腐蚀速率不但与搅拌有关,且在最初半分钟左右或开始250~500(?)的GaAs腐蚀,其腐蚀速率比更长时问或更深腐蚀时要快得多.分析表明,NH_4OH向GaAs与溶体界面的扩散很可能是腐蚀过程的限制步骤.对腐蚀后的残余氧化层进行测试分析,认为化学腐蚀后在表面有一层极薄的氧化物层,接着是过渡层.用HCI或NH_4OH水溶液清洗则可去除氧化物层并缩小过渡层.

The thickness, refraction index, vertical composition profiles and the change of Ga(3d) and As(3d) binding energy, etc, of the oxidized GaAs surface after chemical etching in pH= 7±0.05 H2O2-NH4OH solution or rinsing in HC1:H2O= 1:1 or NH4OH :H2O = 1:110 acquous solution are measured by an ellipsometry, Auger electron and X-ray photoemission spectroscopies. The experimental results from these three different measurements correspond well. After chemical etching, at the outermost surface thereis a thin oxide layer...

The thickness, refraction index, vertical composition profiles and the change of Ga(3d) and As(3d) binding energy, etc, of the oxidized GaAs surface after chemical etching in pH= 7±0.05 H2O2-NH4OH solution or rinsing in HC1:H2O= 1:1 or NH4OH :H2O = 1:110 acquous solution are measured by an ellipsometry, Auger electron and X-ray photoemission spectroscopies. The experimental results from these three different measurements correspond well. After chemical etching, at the outermost surface thereis a thin oxide layer which is then followed by a transition layer composed of oxide and nonstoichiometric GaAs. The oxide layer and a part of transition layer can be moved away by rinsing in an acquous solution of HC1 or NH4OH. After rinsing in NH4OH acquous solution, the fluctuation of Ga/As ratio in the surface layer, the thickness of the residual oxidized layer and the C absorbability of the surface are less than those after in HC1 acquous solution, so it is acceptable to use NH4OH acquous solution as the rinsing reagent after chemical etching in the device technology.

用椭圆偏振仪、俄歇电子能谱仪(AES)和X-光电子谱仪(XPS)等对经pH=7±0.05的H_2O_2-NH_40H溶液化学腐蚀或用NH_4OH:H_20=1:10和HCl:H_2O=1:1进行清洗后的GaAs表面残余氧化层厚度、折射率、纵向组分分布和Ga(3d)与As(3d)结合能变化等进行测定.三者实验结果对应很好.化学腐蚀后的GaAs表面有一层氧化物层,然后是氧化物与GaAs混合的过渡层,直至GaAs衬底.从NH_4OH:H_2O=1:10清洗后GaAs表面残余氧化层厚度,表面C吸附量和Ga/As的波动看,它均比用HCl:H_2O=1:1清洗为优,故用它作为GaAs在化学腐蚀后的清洗是可取的.

 
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