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注入模型
相关语句
  injection model
     Based on power injection model, detail analysis is made on the influence of FACTS control to the optimal equations of power system.
     基于功率注入模型,详细分析了FACTS控制的引入对系统优化方程的影响。
短句来源
     The algorithm uses the Curvelet transform to extract the detail information of the panchromatic(Pan) image,and then employs a context-based decision injection model to inject the extracted information into each band of the original Ms images.
     该算法首先采用Curvelet变换提取全色波段Pan图像的空间细节信息,然后采用基于内容的注入模型将提取的空间信息局部调整后添加到各波段Ms图像中去,得到具有高空间分辨率的Ms图像。
短句来源
     Based on the conventional power system state estimation model, a kind of model for state estimation with UPFC is introduced in this paper, in which power injection model is used and the effect of UPFC on the power flow is transferred to the two nodes of the corresponding transmission line.
     基于传统状态估计模型,通过利用UPFC的功率注入模型,将它对于状态估计的作用转移到所在线路的量测节点上,提出了计及UPFC的状态估计模型。
短句来源
     A FAULT INJECTION MODEL AND ITS APPLICATION ALGORITHM FOR TESTING AND EVALUATION OF FTM
     容错机制测评中的故障注入模型及应用算法
短句来源
     In this paper,with considering the effects of the emitter series resis-tance R_TE and the delay time τox of the poly-Si/Si interfacial oxide layer,a calculating program for high-level injection model of PET has been made by using the Yih-Feng Chyan et al's model.
     利用Yih-FenyChyan等的PET大注入模型,并考虑了发射极串联电阻RTE和多晶硅/硅界面氧化层延迟时间τox对器件特性的影响,编制了程序。
短句来源
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  implantation model
     ION IMPLANTATION MODEL
     离子注入模型
短句来源
     A new two dimensional ion implantation model is presented.
     本文提出了一个改进的二维离子注入模型.
短句来源
     The ion implantation model in the process simulation for semiconductor devices is described. It is indicated that the selection of proper ion implantation model is very important for improving the accuracy of process simulation because of the abilities of ion implantation for accurately controlling the process parameters and forming thin and even doping layer on the large area.
     本文结合我们的科研工作,阐述了半导体器件工艺模拟中的离子注入模型,并指出,由于离子注入具有能精确控制工艺参数,并能在较大面积上形成薄而均匀的掺杂层等特点,因此在工艺模拟中选用合适的离子注入模型对于提高工艺模拟的精确性是十分重要的。
短句来源
  influx model
     POWER FLOW ALGORITHM BASED ON CURRENT INFLUX MODEL
     电流注入模型的电力系统潮流计算
短句来源
  “注入模型”译为未确定词的双语例句
     RA model was established by injection of Freund's Complete Adjuvant(FCA,0.5 mL/kg)into the animal's bilateral joint cavities.
     将弗氏完全佐剂(FCA)按0.5mL/kg注入模型组、艾灸组动物双膝关节腔内,对照组注入等量无菌生理盐水。
短句来源
     The result of simulation can directively be applied for models calculating the productivity of a horizontal well, which can predict the productivity after acidizing treatment.
     这个数值化的酸岩反应模型可以与酸注入模型进行耦合求解,同时,数值模拟的结果可以直接提交水平井产能模型,进行水平井酸化后产能预测。
短句来源
     After transplanting NIH-3T3-TH engineered cells into the lesioned striatum by stereotaxic technique, the rats were tested for rotational behavior induced by apomorphine.
     通过脑立体定位技术,将表达TH的NIH-3T3—TH工程细胞注入模型鼠损毁侧纹状体,观察阿朴吗啡诱导的旋转行为改善情况。
短句来源
     The change of symptoms and serum PTH and calcium levels in the models after 1×105/ml TC-1 injection were observed.
     以及每 1× 10 5个 /mlTC 1细胞注入模型鼠体内各组小鼠血PTH和血钙变化情况。
短句来源
     among 2 groups, inject into model group rabbit left side neck pheasant's soft tissue by sludged blood 9ml, 42 rabbit were measured by TCD, ENG, ABR, VsEPs, cerebellum Purkinje die cell count From the 2th weeks after injecting, Confirm the model appears.
     将制备好的异体血液9ml分别注入模型组家兔左侧颈椎软组织造模,于造模后第2周对42只日本大耳白家兔分别测定TCD、ENG、ABR、VsEPs、小脑浦肯野氏凋亡细胞计数及前庭血流,确定模型出现。
短句来源
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  injection model
The development of electroconvection in liquid dielectrics is analyzed theoretically from the standpoint of the dissociation-injection model of conductivity.
      
The parameters of the injection model, such as the equilibrium concentration of electrons, electron mobility, the occupation of traps, etc., are estimated.
      
Arguments are advanced which discredit, on the grounds of the present experimental results, the double injection model for the electroluminescence.
      
For a systematic transit control, the aptitude of possible FACTS locations is assessed by a sensitivity analysis based on the generation shift distribution factors (GSDF) and the power injection model (PIM).
      
The present study was carried out to determine the effects of central nervous free fatty acids, lysophospholipids, or platelet activating factor (PAF), in a mouse facial carrageenan injection model of orofacial pain.
      
更多          
  implantation model
The tissue compatibility of these hydrogel nanoparticles has been evaluated by comparing with poly-L-lactic acid and polystyrene nanoparticles using a mouse implantation model.
      
To circumvent nonimmunological factors a new rat implantation model was developed to study whether alloreactivity results in histopathological changes and valve dysfunction.
      
Firstly, we designed a vein-implantation model using the rat femoral nerve and vein to study the morphometric changes in nerve endings inserted into venous lumina.
      
The obtained structural details of the metallic films can be explained by an implantation model for the laser deposition process.
      
In order to develop an implantation model in vitro, UE cells were polarized on extracellular matrix (ECM), and polarity was validated by response to estradiol-17β administered exogenously.
      
更多          


The models of acousto-electric interaction and charge injection are presented. A brief introductron is given to several acousto-optoelectronic devices, such as MZOS cameras, SAW-FFT signal processors and MZOS memory-correlators.

本文描述声电交互模型和电荷注入模型,简介MZOS摄像器、SAW-FET信号处理器和MZOS存贮相关器等声光电子学器件.

A new two dimensional ion implantation model is presented.The two dimensional distri-bution of the implanted impurity near an arbitrary shaped mask edge is described by a twohalf-Gaussian profile or a modified Pearson-IV distribution in the vertical direction and bya complementary error function in the lateral direction. The different stopping powers of thevarious mask materials for multi-layer mask have been considered. Using this model, an im-plantation process simulator has been developed which can continuiously...

A new two dimensional ion implantation model is presented.The two dimensional distri-bution of the implanted impurity near an arbitrary shaped mask edge is described by a twohalf-Gaussian profile or a modified Pearson-IV distribution in the vertical direction and bya complementary error function in the lateral direction. The different stopping powers of thevarious mask materials for multi-layer mask have been considered. Using this model, an im-plantation process simulator has been developed which can continuiously calculate the impurityprofile for several times with different energy, dose and impurity. In the calculated results,the effects of the various mask edges have also been taken into account. It is shown that oursimulators both in accuracy and function are much better than the other ones.

本文提出了一个改进的二维离子注入模型.对于在任意形状掩蔽边界下的离子注入分布,我们在纵向采用联结的半高斯分布或修改过的Pearson-IV分布,在横向采用余误差函数分布,并且考虑了在多层掩蔽情况下各种材料阻止本领的不同.利用这一模型发展起来的离子注入模拟器能连续计算多次不同能量、剂量和杂质类型的注入分布,并考虑了多种不同掩蔽边界的影响.通过与其它工艺模拟器的比较,表明我们的模拟器在精度和功能上都有明显的改进.

The ion implantation model in the process simulation for semiconductor devices is described.It is indicated that the selection of proper ion implantation model is very important for improving the accuracy of process simulation because of the abilities of ion implantation for accurately controlling the process parameters and forming thin and even doping layer on the large area.

本文结合我们的科研工作,阐述了半导体器件工艺模拟中的离子注入模型,并指出,由于离子注入具有能精确控制工艺参数,并能在较大面积上形成薄而均匀的掺杂层等特点,因此在工艺模拟中选用合适的离子注入模型对于提高工艺模拟的精确性是十分重要的。

 
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