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in组分
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  in composition
     Dynamical Analysis for the Control of In Composition in LP-MOCVD Growth of InGaAlP
     LP-MOCVD生长InGaAlP外延层In组分控制的动力学分析
短句来源
     InP-based InAlAs/InGaAs PHEMT structure was grown by MBE technology and thefactors affecting the sheet density of the 2-DEG and the electron mobility were studied by AFM andHall test system, the emphasis was put on the effects of the spacer width and In composition in thechannel layer on the density and the electron mobility of the 2-DEG.
     利用MBE技术生长了InP基InAlAs/InGaAs PHEMT结构,使用原子力显微镜(AFM)、霍耳测试系统研究了影响二维电子气(2-DEG)面密度和电子迁移率的因素,着重分析了隔离层厚度、沟道层In组分的影响。
短句来源
     The In composition is determined by XRD measurement using Vegard's law.
     In组分利用Vegard定理和XRD测量得到。
短句来源
     The crystalline quality of the epilayer materials was characterized by X-ray diffraction (XRD). In our experiment, the In composition of the In_xGa_ 1-xAs buffer layers was 0.28, 0.53, 0.82 and 0.88, respectively.
     实验结果表明,低温生长的缓冲层InxGa1-xAs的In组分影响高温生长的外延层In0.82Ga0.18As的结晶质量和表面形貌。
短句来源
     In this thesis, the effects of single side doping structure and double sides doping structure, spacer layer thickness, channel's In composition, various quantum well structures on two-dimensional electron gas density and electron mobility have been studied.
     本论文研究了单侧掺杂和双侧掺杂、隔离层(spacer)厚度、沟道In组分和不同沟道量子阱结构对μ_n和n_s的影响。
短句来源
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  in content
     High efficiency output of a violet LED is obtained by increasing the growth temperature of InGaN quantum wells,reducing the intermingling efficiency of In content,and improving the quality of InGaN/GaN.
     通过提高InGaN量子阱结构的生长温度,降低量子阱In组分的掺入效率,提高InGaN/GaN量子阱结构生长质量,缩短LED输出波长等手段,实现了紫光LED高效率输出.
短句来源
     Control of In Content for InGlP Double Heterojunction Grown by LP-MOCVD
     LP-MOCVD生长InGaAlP双异质结中In组分控制的研究
短句来源
     The eigenvalue equation of the step finite strained single quantum well is deduced from Schrdinger equation, the influence of the step width on first electron energy, first hole energy, the stimulated wavelength, and the influence of the first hole energy on stimulated wavelength are studied. The results indicate that, if the In content is large, the influence of the first hole energy on the stimulated wavelength should not be neglected.
     从薛定谔方程出发推导了阶梯形有限深应变单量子阱中的特征值方程 ,研究了台阶宽度对激射波长、电子第一子能级、空穴第一子能级的影响以及空穴第一子能级对激射波长的影响 ,计算结果表明当有源区In组分较大时 ,不能忽略空穴第一子能级对激射波长的影响 .
短句来源
     The results indicate that the electrical performance is the best when the In content is 0.65 in the channel for MM-HEMT. When the In content exceeds 0.65, a large lattice mismatch will cause dislocations and result in the decrease of mobility and the fall of performance in materials and devices.
     结果表明 ,沟道中In组分为 0 6 5的样品 ,材料电学性能最好 ,In组分高于 0 6 5的样品 ,严重的晶格失配将产生位错 ,引起迁移率下降 ,大大影响材料和器件的性能 .
短句来源
     Based on the experimental data in references, the mathemat ical expression of In content shift for InGlP material grown by LP-MOCVD is pr estnted. It may be used to control the In content of InGlP DH grown by LP-MOC VD.
     根据已经发表的有关文献实验数据 ,针对InGaAlP发光材料的LP -MOCVD生长 ,给出了描述In组分偏离的经验表达式 ,可应用于InGaAlP双异质结生长中In组分的控制
短句来源
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  “in组分”译为未确定词的双语例句
     Study on electroluminescence spectra of In_xGa_(1-x)N/GaN-MQWs materials with high indium contents
     高In组分In_xGa_(1-x)N/GaN多量子阱材料电致荧光谱的研究
短句来源
     From the relationship we can see that the critical temperatures of Mg1-xInxB2 ( = 0, 0.01, 0.02 and 0.03 ) decrease as In-content increase.
     测量的结果表明:Mg1-xInxB2 ( = 0, 0.01, 0.02, 0.03 ) 样品随着In组分的增加, 临界转变温度呈下降的趋势。
短句来源
     The critical composition X_c of In for plastic deformation of epilayer isbetween 0.004 and 0.006.
     当外延层产生范性形变时衬底中的临界In组分x_c在0.004和0.006之间.
短句来源
     AlGaAsSb/InGaAsSb multiple quantum well material was grown by solid state molecular beam epitaxy (SSMBE). Structural parameters (InGaAsSb well width, AlGaAsSb barrier width, Al fraction in barrier, In fraction in well, well number, etc) were varied to improve the intensity of the photoluminescence.
     用固态源MBE技术生长了AlGaAsSb/InGaAsSb多量子阱材料,研究了通过改变多量子阱AlGaAsSb/InGaAsSb中的结构参数,如多量子阱中InGaAsSb的阱宽,AlGaAsSb的垒宽及垒层中Al组分和阱层中的In组分,多量子阱中的阱数等,来提高AlGaAsSb/InGaAsSb多量子阱的PL强度。
短句来源
     Surface minimum yields χ min of In x Ga 1-x N films changed from 4.1% to 11.0% when the x value of In x Ga 1-x N varied from 0.04 to 0.10.
     研究还表明 ,InGaN薄膜的结晶品质随In组分的增大而下降 ,InGaN薄膜的In组分由 0 0 4增大到 0 10 ,其最低沟道产额比由 4 1%增至 11 0 %。
短句来源
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  in composition
Comparison of the protein patterns of the calluses demonstrated differences in composition and content of individual components.
      
As an example the results are presented of the calculation of the disintegration of a sphere made from a material similar to textolite in composition.
      
If the liquid is uniform in composition and isothermal, then such equilibrium, as shown in [2], is stable for all Ω.
      
The correctness of modeling the conditions behind the reflected wave by means of mixtures similar in composition to the equilibrium products of the N2O-CO reaction [1] is discussed in the same context.
      
The crystallization of the xK2O · xNb2O5· (1 - 2x)SiO2(x= 0.167-0.250) glasses and glasses close in composition to K2O · Nb2O5· 4SiO2at the ratio K2O : Nb2O5≠ 1 is investigated.
      
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  in content
Treatment with Li+, Na+, or Rb+ resulted in a change in phosphate accumulation to 60, 73, and 107% and in content of the intracellular mobile polyphosphate (polyP) to 119, 112, and 94%, respectively, compared with the control taken as 100%.
      
A decrease in content, but not in activity, of p53 also caused cell death.
      
Decrease in Content of Insoluble Fraction in cis-1,4-Polyisoprene in Formation of Titanium Catalyst in Turbulent Flow
      
Magnetic susceptibility and superconductivity of (Pb0.2Sn0.8)1-xInxTe alloys as a function of in content
      
The spectra of the blue and green light-emitting diodes have maxima in the interavals ?ωmax=2.55-2.75 eV and ?ωmax=2.38-2.50 eV, respectively, depending on the In content in the active layer.
      
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The LPE and VPE growth of GaAs on SI GaAs:In (001) substrate is reported.Thelattice mismatch between epilayer and substrate has been studied by double crystal X-ray dif-fraction and optical photographic methods.The results show that no misfit dislocation is gene-rated during growth when the In composition X in substrate is less than 0.004, the misfit straininduced by the lattice mismatch is accommodated mainly by elastic deformation, and good sur-face morphologycould be obtained:When the In composition X exceeds...

The LPE and VPE growth of GaAs on SI GaAs:In (001) substrate is reported.Thelattice mismatch between epilayer and substrate has been studied by double crystal X-ray dif-fraction and optical photographic methods.The results show that no misfit dislocation is gene-rated during growth when the In composition X in substrate is less than 0.004, the misfit straininduced by the lattice mismatch is accommodated mainly by elastic deformation, and good sur-face morphologycould be obtained:When the In composition X exceeds 0.006, misfit disloca-tions are found to be generated, the relaxation of the misfit strain is caused mainly by misfitdislocations,and "Cross-hatch" pattern appeared along [110] and [110] directions in theLPE layer surface. The critical composition X_c of In for plastic deformation of epilayer isbetween 0.004 and 0.006.

本文报道了在掺In半绝缘GaAs衬底上的液相和汽相外延生长,并用x射线双晶衍射和光学显微等方法研究外延层和衬底之间的晶格失配.结果表明,当衬底中In组分x<0.004时,外延层失配应力主要由弹性形变调节,不出现失配位错,并可得到很好的表面形貌;当x≥0.006时,外延层产生失配位错,失配应力主要由失配位错调节,液相外延层表面出现沿[110]和[110]方向的十字网络.当外延层产生范性形变时衬底中的临界In组分x_c在0.004和0.006之间.

The optical properties of the strained-layer coupled quantum wells in InGaAs/GaAs have been investigated by the photoluminescenee and photocurrent spectrum techniques. The exoitonic transitions of both heavy and light holes are observed in the spectra and assigned by their polarization features. The experimental results show that the energies of heavy hole excitons corresponding to transitions of symmetry to symmetry states shift to lower energies, as the barrier become(?) thinner in the coupled wells. The excitonic...

The optical properties of the strained-layer coupled quantum wells in InGaAs/GaAs have been investigated by the photoluminescenee and photocurrent spectrum techniques. The exoitonic transitions of both heavy and light holes are observed in the spectra and assigned by their polarization features. The experimental results show that the energies of heavy hole excitons corresponding to transitions of symmetry to symmetry states shift to lower energies, as the barrier become(?) thinner in the coupled wells. The excitonic transition energies calculated with a model of coupled two wells, which takes into account both strain and quantization, are in good agreement with the measured values. This work also suggests that light holes are confined in GaAs layer at the, In composition of the sample.

用光荧光和光电流实验方法研究了InGaAs/GaAs应变耦合量子阱的光学性质.实验表明,在耦合阱结构中,势垒愈薄,耦合愈强,其对称态←→对称态所对应的跃迁能量比未耦合阱中n=1重空穴激子跃迁能量降低更甚.实验中还观察到具有不同偏振特性的吸收峰,并根据这一特征指认了轻、重空穴的跃迁.用双阱耦合模型计算了耦合阱结构中受限态之间的跃迁能量,理论与实验符合较好.实验研究也表明,在实验样品的In组分下,轻空穴受限在GaAs阱层中.

Using picosecond time-resolved luminescenoe correlation technique, the picosecond relaxation of hot carrier in In_aGa_(1-x)As/GaAs strained single quantum well structures is studied. The result shows a dependence of indium composition x, and hence the strain in In_xGa_(1-x)As layer, on carrier relaxation time. A significant enhancement of photoindnoed carrier relaxation time oompared with that of bulk InGaAs has been observed.

用皮秒时间分辨荧光相关技术研究了In_xGa_(1-x)As/GaAS应变量子阱中的热载流手弛豫过程,结果表明,In组分x值(不同应变)对载流子弛豫寿命有明显的影响;与体材料相比,热载流子分布弛豫过程明显变慢,寿命明显增加.

 
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