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mos电路
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  mos circuits
     APPLICATION OF MULTIPLE-VALUED SWITCH-LEVEL ALGEBRA TO THE FORMAL VERIFICATION OF MOS CIRCUITS
     多值开关级代数在MOS电路形式验证中的应用
短句来源
     The possibility of combining MOS with DYL circuits is analyzed, and the designs of ternary-and quarternary-valued logic function circuits using mono or multi-thre-sholdvoltage MOS circuits and DYL circuits are proposed.
     本文分析了MOS电路和DYL电路兼容的可能性,提出了用不同开启电压或相同开启电压的MOS电路与DYL电路兼容方式实现的三值或四值逻辑电路的设计方案。
短句来源
     In the paper, a biological neuron is simulated by means of MOS circuits, and a artificial neural network is constructed.
     本文用MOS电路模拟一个生物神经细胞,并构成人工神经元网络。
短句来源
     The application of multiple-valued logic to model capacitors in MOS circuits is discussed in this paper. Based on this model,new methods for MOS dynamic circuit analysis,delay analysis and charge sharing analysis are proposed.
     本文应用多值开关级代数为MOS电路中的电容建立模型,并提出了应用多值开关级代数分析MOS动态电路、时延及电荷共享的方法。
短句来源
     Three standard forms of multiple-valued switch-level algebraic expressions of MOS circuits are discussed in this paper. Theorems on transforming multiple-valued switch-level expressions into Boolean expressions are given. Based on these results,a procedure for formal verification of MOS circuits at switch level is proposed.
     本文讨论了MOS电路多值开关级代数表达式的三种标准结构.给出了将多值开关级表达式转换成布尔表达式的定理.基于这些理论,提出了MOS电路开关级形式验证的一种方法.
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  “mos电路”译为未确定词的双语例句
     It can quickly and accurately determine β_0 ,θ, R_T, D_(it), and the MOS modeling parameters of SPICE 2G5.The experimental results of LDD and other short-channel MOS devices show that this technique has strong abilities for immunity and is an effective CAM means for LSI MOS circuit fabrication.
     它能快速而又精确地提取短沟道MOS器件的源漏串联电阻R_T、表面迁移率μ_0、迁移率退化因子θ、阈值电压V_T、平均表面态密度D_(it)等SPICE模拟程序中的模型参数. 对LDD、硅栅CMOS等短沟道MOS器件测试结果表明它还具有抗干扰能力强之特点,是一种LSI-MOS电路制造的有效的CAM手段.
短句来源
     We extend the D-algorithm to the switch level and propose a robust test generation algorithm for detecting transistor stuck-open faults of CMOS circuits An experimental switch-level MOS test generation program MOSTEGX has been implemented on VAX 11/750.
     我们将D算法推广到开关级上,提出一种稳定的(robust)测试生成算法,可用于检测CMOS电路的晶体管开路故障。 一个实验性的MOS电路开关级测试生成程序MOSTEGX已在VAX 11/750上实现。
短句来源
     The phenomenons and physical mechanisms of the hot-carrier induced MOSFET'S degradation under dynamic stress are introduced,which may lay the foundations for the research of hot-carrier reliability in CMOS circuits.
     对当前MOS电路中的动态应力热载流子退化现象及其物理机制进行了详细论述,为动态应力下CMOS电路热载流子可靠性研究奠定了基础。
短句来源
     A Design Technique of Neuron MOS Binary Circuits Based on Multiple-Valued Logic
     基于多值逻辑方法的二值神经元MOS电路设计技术
短句来源
     A MOS circuit may be modelled at switch-level by use of multiple valued switch-level algebra (MSA), which has been successfully used in analysis and design of pass-transistor switch networks.
     多值开关级代数可以在晶体管开关级为MOS电路建模,井已在分析与设计通路晶体管开关网络中取得了很好的效果。 本文对多位开关级代数作了进一步研究,取得了若干新结果:(1)提出以(A#B)*G的形式来描述MOS管的双向开关特性;
短句来源
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  相似匹配句对
     MOS MONOLITHIC ANALOG CIRCUITS
     单片化MOS模拟电路
短句来源
     Multiple-Valued Logic Circuits Using MOS and DYL Circuits
     用MOS和DYL电路兼容的多值逻辑电路
短句来源
     Basic Direct Current Circuits
     直流电路
短句来源
     Digital ICs
     数字电路
短句来源
     A 4K MOS Dynamic Random-Access Memory
     4K MOS动态随机存储器
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  mos circuits
Techniques are presented for the radiation fine adjustment of threshold voltage in MOS circuits, employing x-rays (photon energies 10-20 keV) and near-UV radiation.
      
The experience gained by using the techniques in the mass production of a wide variety of MOS circuits is briefly reviewed.
      
The switch-level modeling of digital MOS circuits subject to propagation delay is addressed.
      
The proposed network was constructed with simple analog metal-oxide-semiconductor (MOS) circuits.
      
Inspired by a mechanism of biological vision systems, a model and a network of analog metal oxide semiconductor (MOS) circuits are proposed which display an optical flow with local adaptation to the relative velocity of a background image.
      
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Analog input channel is one of the crucial parts in the utiliza-tion of computer for automatic measurement and control. Currently, there are prac-tical difficulties remained to be resolved in the hook-up of the component to cer-tain system. During the development of G3 Data Aquisition/processing Control Sys-tem, we were also experiencing these difficulties, and were presented in this reportas follows. The analog switch is the fundamental part of the channel. We adopteda tube-typed, opticoelectrocoupling-MOS...

Analog input channel is one of the crucial parts in the utiliza-tion of computer for automatic measurement and control. Currently, there are prac-tical difficulties remained to be resolved in the hook-up of the component to cer-tain system. During the development of G3 Data Aquisition/processing Control Sys-tem, we were also experiencing these difficulties, and were presented in this reportas follows. The analog switch is the fundamental part of the channel. We adopteda tube-typed, opticoelectrocoupling-MOS circuit analog switch. In theory, this is anideal type for the analog switch. Its performance has been confirmed by our prac- tice. During the test-runs of G3 system, we found that the channel interfrence phe-nomena persisted. After conducting substantial tests and careful analyses of the re-sults, we had come up with a way of suppressing the interference. Tests were per-formed and summarized for the key factor, the temperature coefficient, of the trans-ducer's constant-current source that might affect the measurement accuracy. Wefind that the temperature cofficient would depend on performances of the operationamplifier The success of choosing an appropriate amplifier enables us to resolvethe difficulty on the application of a new type semiconductor transducers. Throughexperiments, we have come up with a way to prevent voltage overloading. Bythe four pairs of transistor modulating/demodulating analog switch in the dataamplifier, we found that the selection and distribution could simply be carried outaccording to the reversed current amplification coefficient.

模入通道是把电子计算机用于自动检测和控制时,所须先解决的一个部分,但它在实用上还存在不少问题。本文对C3数据采集处理控制系统的模入通道作了简介,对研制使用中的难点,即调试中出现的通道干扰现象、采用的光电耦合器—MOS电路式变量程模拟开关、使用精密电源时的干扰现象、影响精密恒流源温度系数指标的因素、放大器调制解调晶体管对接开关的选配以及电子设备过压保护方案,进行了总结探讨,提出了解决途径。

The possibility of combining MOS with DYL circuits is analyzed, and the designs of ternary-and quarternary-valued logic function circuits using mono or multi-thre-sholdvoltage MOS circuits and DYL circuits are proposed.

本文分析了MOS电路和DYL电路兼容的可能性,提出了用不同开启电压或相同开启电压的MOS电路与DYL电路兼容方式实现的三值或四值逻辑电路的设计方案。

An unified method for converting MOS circuit level description into logic level description is presented. The experimental results show that the complexity of the algorithms introduced in this paper is linear.

本文介绍了一种将MOS电路级描述转换成逻辑级描述的统一方法。实验结果表明:算法的时间复杂度为O(n)。

 
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