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集电结
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  collector junction
     DC Performance of AlGaInP/GaAs HBT with Different Base/Collector Junction Structure
     不同集电结结构的AlGaInP/GaAs异质结双极晶体管
短句来源
     Compared with the double mesa SiGe HBT, this new device structure reduces the emitter junction area by more than 50%, and reduces the collector junction area by about 70%, meanwhile it increases the BVCBO by 28%.
     相对于双台面结构的SiGeHBT而言,该结构的SiGeHBT在发射极总周长不变的情况下,其发射结面积减少超过50%,集电结面积减少近70%,BVCBO也提高了近28%。
短句来源
     Compared with traditional termination structure,deep trench termination structure does not reduce dissipation area but decreases collector junction area and leakage current,and the f T and K P of RF power devices DCT260 are improved 33% and 1dB respectively.
     与传统结构相比 ,在不减小散热面积的情况下 ,该结构还减小集电结面积和漏电流 ,器件的截止频率提高 33% ,功率增益提高 1d B
短句来源
     Three large-scale Heterojunction Bipolar Transistors with different base/collector junction structure have been fabricated by using AlGaInP/GaAs HBT material grown by MOCVD.
     设计并制备了三种不同集电结结构的A lG aInP/G aA s异质结双极晶体管,计算给出了三种集电结能带结构。
短句来源
     Based on the analysis and study of the carrier transport of SiGe HBT, emitter junction capacitance model is developed by considering the carrier distribution, and the collector junction capacitance model is also established for different current densities including base extending effect.
     在分析研究SiGeHBT载流子输运的基础上 ,建立了考虑发射结势垒区内载流子分布的发射结势垒电容模型和不同电流密度下包括基区扩展效应的集电结势垒电容模型 .
短句来源
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  “集电结”译为未确定词的双语例句
     A novel InP/InGaAs/InP double heterojunction bipolar transistor (DHBT) structure is designed,in which a thin heavily doped n~+-InP layer between the base and the collector is used to eliminate the energy spike at the B-C junction and overcome the electron blocking effect.
     设计了一种新结构InP/InGaAs/InP双异质结双极晶体管(DHBT),在集电区与基区之间插入n+-InP层,以降低集电结的导带势垒尖峰,克服电流阻挡效应.
短句来源
     The heterojunction barrier effects(HBE) in Si/SiGe/Si double heterojunction bipolar transistors (DHBTs) at various temperatures are studied. It is found that HBE becomes more evident with the increase of the valence-band discontinuity △Ev at the BC heterojunction.
     本文研究了不同温度下Si/SiGe/Si双异质结晶体管(DHBT)异质结势垒效应(HBE),研究发现,集电结(BC)处价带能量差△Ev越大,HBE越明显,在给定的△Ev下,随着温度的降低,HBE越显著。
短句来源
     Accounting for the charging effect of the quasineutralbase, the charge-control equation of carriers under the condition of extraction of carriers in thebase is solved and the profiles of carrier concentration and relaxation current for the transientturn-off are also obtained, which are in good agreement with the results from the network modelingand the experiment.
     它基于有非平衡载流子抽出下的电荷控制方程,计及集电结电荷存储效应,kirk效应和准中性基区瞬态电荷分配效应,获得瞬态截止状态下的载流子浓度和阳极电流值及其与器件参数的关系。 它与作者提出的这种器件的网络模型所计算的结果和实验结果相当一致。
短句来源
     The dependence of the effective barrier spike at the B-C junction and the I-V characteristics of the DHBT on the thickness and doping density of the n~+-InP composite collector are analyzed theoretically.
     采用基于热场发射和连续性方程的发射透射模型,计算了n+-InP插入层掺杂浓度和厚度对InP/InGaAs/InPDHBT集电结导带有效势垒高度和I-V特性的影响.
短句来源
     By the aid of the two dimensional analytical model [5] of the electric potential and field distribution in power semiconductor GATs collector depletion space in a cut off state which was established by the writers lately,the GATs avalanche breakdown characteristics was investigated quantitatively,and the experimental results which concluded that the GATs can realize the compatibility between high breakdown voltage and high current gain,were explained quantitatively.
     通过作者最近建立的关于电力半导体器件 GAT的集电结耗尽层电位分析和电场分布的二维解析模型定量研究了 GAT的雪崩击穿特性 ,并且定量解释了该器件实现高击穿电压与高电流增益兼容的实验结果。
短句来源
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  相似匹配句对
     How to Identify the Biased Collector Junction with the Transistor Saturated
     三极管饱和时的偏置状态
短句来源
     EFFECTS OF THE BASE-TO-COLLECTOR JUNCTION CAPACITANCE OF A TRANSISTOR ON AMPLIFYING CIRCUITS
     晶体管容对放大路的影响
短句来源
     DC Performance of AlGaInP/GaAs HBT with Different Base/Collector Junction Structure
     不同构的AlGaInP/GaAs异质双极晶体管
短句来源
     THE DISCUSSION OF PHYSICAL PROCESS FOR THE TRANSISTOR—COLLECTOR JUNCTION FROM REVERSE BIAS TO FORWARD BIAS
     晶体管由反偏到正偏的物理过程讨论
短句来源
     The Maintenance of Collecting Ring for Motors
     发环维护
短句来源
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  collector junction
The electrons injected from the metal into the semiconductor with a high kinetic energy (greater than 1 eV) during impact ionization generate electron-hole pairs in the region of the base-collector junction.
      
In the suggested theory, boundary conditions of the third kind (instead of the Dirichlet conditions) are specified at the collector junction.
      
Influence of the doping profile on the collector junction breakdown voltages in planar n-p-n transistors
      
It is shown that the use of a planar p-n junction raises the collector junction breakdown voltages of planar n-p-n transistors.
      
Quick estimation of the resistivity of collector and the depth of the collector junction in the design of bipolar n-p-n transist
      
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ВЛИЯНИЕ НЕОБЕДНЕННЫХ НОСИТЕЛЕЙ ТОКА НА ОБРАТНУЮ ХАРАКТЕРИСТИКУ Р-И ПЕРЕХОДА

本文研究了P~+-N结中载流子未耗尽时的二极管反向伏安特性和在大电流密度下合金晶体管集电极特性。 首先,对雪崩击穿的机构,推导了载流子未耗尽时的P~+-N结反向电流与电压的关系式。结果指出,倍增因子M不仅和加在结上的电压大小有关系,而且和流过结的电流J有关系。理论分析可以证明,当二极管几何结构满足一定条件时,可以观察到由于载流子对空间电荷的贡献不能忽略时所导致的等效电阻对P~+-N结反向伏安特性的影响。用脉冲方法测量了锗合金二极管反向击穿后的伏安特性,实测结果和理论值很符合。 其次,从理论上考虑了集电结中未耗尽载流子作用后,推导了P-N-P合金晶体管在大电流密度下集电结的雪崩倍增特性。由结果可见,晶体管在大电流密度下,集电结的倍增因子M不仅和电压有关系,而且和发射极的电J_e有关系。分析指出,由于P-N结中未耗尽载流子的作用,在共发射极线路、基极断路时,若合金管电流放大系数α_o在1/2.3~1范围内将会出现负阻。这个负阻已经被实验所证实。实验得至的整个负阻范围内的伏安特性与理论值符合较好。 实验是在脉冲电流下进行的。并且在不同的环境温度下进行了测量。实验结果表明,随温度的...

本文研究了P~+-N结中载流子未耗尽时的二极管反向伏安特性和在大电流密度下合金晶体管集电极特性。 首先,对雪崩击穿的机构,推导了载流子未耗尽时的P~+-N结反向电流与电压的关系式。结果指出,倍增因子M不仅和加在结上的电压大小有关系,而且和流过结的电流J有关系。理论分析可以证明,当二极管几何结构满足一定条件时,可以观察到由于载流子对空间电荷的贡献不能忽略时所导致的等效电阻对P~+-N结反向伏安特性的影响。用脉冲方法测量了锗合金二极管反向击穿后的伏安特性,实测结果和理论值很符合。 其次,从理论上考虑了集电结中未耗尽载流子作用后,推导了P-N-P合金晶体管在大电流密度下集电结的雪崩倍增特性。由结果可见,晶体管在大电流密度下,集电结的倍增因子M不仅和电压有关系,而且和发射极的电J_e有关系。分析指出,由于P-N结中未耗尽载流子的作用,在共发射极线路、基极断路时,若合金管电流放大系数α_o在1/2.3~1范围内将会出现负阻。这个负阻已经被实验所证实。实验得至的整个负阻范围内的伏安特性与理论值符合较好。 实验是在脉冲电流下进行的。并且在不同的环境温度下进行了测量。实验结果表明,随温度的升高整个负阻区的伏安曲线向电压高的方向有很微小的移动。这说明负阻的产生不是由于热效应引起,而

The three-dimensional heat conduction equation for steady state operating conditions of bipolar microwave power transistors has been solved.Based on the principle of thermal-electric feedback, the nonuniform distribution of current and juc-tion temperature in bipolar microwave power transistors have been calculated, the effects of the collector bias voltage and emitter ballast resistors on this distributions have been discussed quantitively, and a ballast technique of the unequal values of the resistors has...

The three-dimensional heat conduction equation for steady state operating conditions of bipolar microwave power transistors has been solved.Based on the principle of thermal-electric feedback, the nonuniform distribution of current and juc-tion temperature in bipolar microwave power transistors have been calculated, the effects of the collector bias voltage and emitter ballast resistors on this distributions have been discussed quantitively, and a ballast technique of the unequal values of the resistors has been presented.The experiments have shown that the use of this technique in microwave power transistors has given rise to a considerable improvements in uniform distribution of junction temperature and current.

本文对双极性微波功率晶体管(以下简称微波功率晶体管)求解了稳态工作条件下的三维热传导方程。文中根据热电反馈原理,计算了非均匀分布的结温和电流,定量地讨论了集电结偏压和镇流电阻对结温和电流分布的影响,进而提出了非均匀镇流技术。试验表明,采用了非均匀镇流技术的微波功率晶体管,它的结温和电流分布的均匀性均有明显的改善。

As far as silicon switching transistors are concerned,the measured storage time Ts

对硅开关晶体管来说,在基极驱动电流I_B_1和反抽电流I_B_2固定的条件下,测量出的存贮时间t_s随集电极电流的增加而增加或不变.这种现象是无法用一般常用的Ebers-Moll模型来解释和模拟的.通过实验我们看到:在这种开关晶体管中集电结正向电流主要是空间电荷区中的复合电流而不是注入电流.而空间电荷区中的复合电流并不伴随着电荷存贮,因而可以起抗饱和的作用.而抗饱和的程度受到集电极串联电阻,集电极电流,基极串联电阻和电流增益的影响.我们称这种效应为空间电荷区复合流抗饱和效应.我们提出考虑此效应的模型.用此模型可以模拟一般Ebers-Moll模型无法模拟的硅开关晶体管的特性,使计算结果和实验符合得较好.

 
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