助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   低温电路 的翻译结果: 查询用时:0.007秒
图标索引 在分类学科中查询
所有学科
更多类别查询

图标索引 历史查询
 

低温电路
相关语句
  “低温电路”译为未确定词的双语例句
     Simulation result were presented andvalidated by comparison with experimental data.
     研究结果发现,该等效电路模型对功率MOSFET低温电路级仿真研究有一定的参考价值。
短句来源
     By taking into account of the main parameter variations of discrete MOSFET devices and interconnect wires, we have modified the room temperature CMOS BSIM3 model and established cryogenic temperature CMOS models.
     通过讨论MOSFET器件和互连线主要特性参数随温度的变化情况,修改了常温CMOSBSIM3模型以及互连线参数,建立了77K、4K温度下的低温电路仿真模型.
短句来源
  相似匹配句对
     LOW TEMPERATURE MICROELECTRONIC DEVICES,CIRCUITS AND SYSTEMS
     低温微电子器件、电路和系统
短句来源
     Low Temperature Microelectronic Devices. Gircuits and Systems
     低温微电子器件、电路和系统
短句来源
     Basic Direct Current Circuits
     直流电路
短句来源
     Digital ICs
     数字电路
短句来源
     The Low Temperature Electrochemistry
     低温电化学
短句来源
查询“低温电路”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
没有找到相关例句


From tWo different levels of device characteristics and circuits conditions, an optimizing design method for BiCMOS gate which operating in the low temperatures have been proposed, and the reliable conclusions which is clearly in physical significance hve also been achieved, based on the new models presented in this paper.The theory,and method presented for have actural function in directing the high speed Cryogenic BiCMOS circuits design

该文根据新建立的BiCMOS门电路延迟模型.从器件性能和电路工作状态两个层次上分析了低温BiCMOS门电路的优化设计,得到了物理意义清晰、可靠的结论,并且所提出的理论和方法,对高速BiCMOS低温电路的设计具有实际指导意义.

Short channel MOSFET devices andcircuits basedon a commercial 0.25 m CMOS process have been fabricated and tested at cryogenic temperature. By taking into account of the main parameter variations of discrete MOSFET devices and interconnect wires, we have modified the room temperature CMOS BSIM3 model and established cryogenic temperature CMOS models. We have simulated the MOSFET devices and 31-stage ring oscillators by using the established cryogenic temperature models. The simulations fit the experimentalresults...

Short channel MOSFET devices andcircuits basedon a commercial 0.25 m CMOS process have been fabricated and tested at cryogenic temperature. By taking into account of the main parameter variations of discrete MOSFET devices and interconnect wires, we have modified the room temperature CMOS BSIM3 model and established cryogenic temperature CMOS models. We have simulated the MOSFET devices and 31-stage ring oscillators by using the established cryogenic temperature models. The simulations fit the experimentalresults roughly well. The ring oscillator'speriodhas been reduced at cryogenic temperature, 50%~60% improvement of the circuit performance can be obtained at 4K.

本文采用0.25微米工艺制备了CMOS器件和电路,通过对300K、77K和4K温度下器件和电路特性的测量,研究了工作温度降低对CMOS电路特性的影响.通过讨论MOSFET器件和互连线主要特性参数随温度的变化情况,修改了常温CMOSBSIM3模型以及互连线参数,建立了77K、4K温度下的低温电路仿真模型.利用上述新建立的低温电路仿真模型对CMOS电路进行仿真,并将仿真结果与实际测量结果比较,获得了比较一致的结果.研究表明在4K温度下CMOS电路的工作性能大约有50%到60%的改善.

 
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关低温电路的内容
在知识搜索中查有关低温电路的内容
在数字搜索中查有关低温电路的内容
在概念知识元中查有关低温电路的内容
在学术趋势中查有关低温电路的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社