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调制损耗
相关语句
  modulation loss
     In the ideal modulation where δ = 0, and ρ1 =ρ2 = 0, LM = 0.96db is found which is the same as the modulation loss value for any0-π modulator.
     96 db,这是与任何0—π调制器的最佳调制损耗数值一致的.
短句来源
     Based on the nonlinear equation of CO2 laser, a new dynamical system with modulation loss is constructed and investigated by using of the theretical analysis method.
     从描述CO2激光器的非线性方程出发,构造一种具有调制损耗的新动力学系统,并从理论上分析了这种调制损耗的CO2激光器的动力学行为。
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  相似匹配句对
     Optimum Estimation of the Internary Loss-modulating for the Mode Lockedlaser
     内损耗调制锁模最佳调制深度估算
短句来源
     Noise behavior of pulse in loss switched CO_2 laser
     损耗调制CO_2激光脉冲的噪声特性
短句来源
     The calculation of cable loss.
     光缆损耗计算;
短句来源
     Modulation Contrast Microscopy
     调制衬比显微术
短句来源
     LIGHT ABSORPTION LOSS OF OPTIC FIBER
     光纤的光吸收损耗
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In order to improve the carrier suppression factors Psup of the microwave ferrite modulator, the condition for maximum energy translation from the carrier to the sideband has been found through a mapping process by which a message space is mapped onto a signal space. The formulas of factors causing vestige carrier are obtained by specifying the translation condition for ferrite modulator and it is found that the theoretical value of Psup is in good agreement with that obtained.The modulation loss formula is...

In order to improve the carrier suppression factors Psup of the microwave ferrite modulator, the condition for maximum energy translation from the carrier to the sideband has been found through a mapping process by which a message space is mapped onto a signal space. The formulas of factors causing vestige carrier are obtained by specifying the translation condition for ferrite modulator and it is found that the theoretical value of Psup is in good agreement with that obtained.The modulation loss formula is also developed which shows that, in general,the less the parameters pertinent to modulator and driver, ρ1, ρ2, δ TU/T and △+,△- the less the modulation loss LM. In the ideal modulation where δ = 0, and ρ1 =ρ2 = 0, LM = 0.96db is found which is the same as the modulation loss value for any0-π modulator.

本文从提高微波铁氧体调制器的载波抑制度P _(?)出发,从信息空间到信号空间的一般映射过程中找出载波能量最大限度转移到边带的条件.并且对铁氧体调制器的转移条件进行了详细推导,得出引起线余载波因素的公式.P_(?)的计算值与实测值基本上一致.本文还推导出调制损耗公式,一般情况下,当调制器和激励器的参数:T_(12)、ρ_1、ρ_1、ρ_2、δ、τ_u/T,以及西△_+、△_-愈小,调制损耗L_M(db)就愈小多 在δ=0,T_(12)=1,ρ_1=ρ_2=0的理想调制情况下,得出L_N=.96 db,这是与任何0—π调制器的最佳调制损耗数值一致的.

By means of a lot of experiment, this work deals with the calculation on total efficiency, slope efficiency and magnification, and also with analysis on loss, resonator length and a combination of 2 crystal Nd~(3+): YAG laser with different curved end faces.

本文通过大量实验,分析和讨论修有不同曲率凹面的掺Nd~(3+):YAG棒的动和静态、调制与非调制的损耗、消光比、晶体串接、曲率和腔长的关系;计算了总体转换效率、斜率效率和损耗率。

Micromechanical switches have demonstrated great potential at microwave frequencies due to their very low consumption, low cross modulation, and low insertion loss characteristics. Studies are concentrated on the design of novel structures and fabrication techniques. There is little work that has been done to describe their electrostatic forces modeling. In this paper, an analytical formulation of a membrane switch based on the mechanics of materials is conducted through reasonable assumption and simplification....

Micromechanical switches have demonstrated great potential at microwave frequencies due to their very low consumption, low cross modulation, and low insertion loss characteristics. Studies are concentrated on the design of novel structures and fabrication techniques. There is little work that has been done to describe their electrostatic forces modeling. In this paper, an analytical formulation of a membrane switch based on the mechanics of materials is conducted through reasonable assumption and simplification. Furthermore, the sensitivity of switching threshold voltage to switch geometry and material properties is discussed in detail. It would be valuable to design the MEMS switch.

MEMS开关以其固有的低功耗、低插损和低交叉调制损耗等特性 ,在微波领域表现出巨大的应用潜力。但是目前大部分的研究工作都集中在设计新型开关结构和开关制作工艺上 ,对开关力学模型的研究较少。本文根据材料力学 ,通过合理的假设和简化 ,推导出MEMS开关的静电力解析模型 ,并详细探讨开关阈值电压和开关几何尺寸及材料特性之间的关系。这对MEMS开关的设计有一定的指导意义

 
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