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发射极区
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    The emitter regions of silicon bipolar microwave transistors are usually heavily doped. The magnitude and distribution of impurity concentrations of the emitter and base regions depend upon the designs and technologies of the transistors.
    硅双极微波晶体管的发射极区和基区的杂质浓度都较高,杂质浓度高的程度及其分布随管子不同而异。
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  emitter region
Near-emitter region of thermoelectronic laser energy converter at high concentrations of a readily ionized additive
      
Fine structure of the near-emitter region of a thermoelectronic laser energy converter with a high concentration of atoms of a readily ionized additive at this electrode have been studied with allowance for variations in the electron temperature.
      
The ion composition of the plasma in a near-emitter region qualitatively changes with a distance from the electrode.
      
Low-frequency noise of the quasi-neutral emitter region of bipolar transistors
      
At low frequencies and currents the advantage is held by topographies that maximize the area-to-perimeter ratio of the emitter region-in particular, transistors with an annular emitter and a central base contact.
      
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The emitter regions of silicon bipolar microwave transistors are usually heavily doped.The magnitude and distribution of impurity concentrations of the emitter and base regions depend upon the designs and technologies of the transistors.Both the bandgap narrowing and the impurity deionization have influence on majority carrier concentrations, minority carrier concentrations and the characteristics of transistors.Considering only one of them may lead to somewhat unsatisfactory results.In this paper an analytical...

The emitter regions of silicon bipolar microwave transistors are usually heavily doped.The magnitude and distribution of impurity concentrations of the emitter and base regions depend upon the designs and technologies of the transistors.Both the bandgap narrowing and the impurity deionization have influence on majority carrier concentrations, minority carrier concentrations and the characteristics of transistors.Considering only one of them may lead to somewhat unsatisfactory results.In this paper an analytical trea- tment of ideal emitter injection-efficiency-limited current gain of a bipolar device is pre- sented that includes the effects of bandgap narrowing,impurity deionization and Fermi- Dirac statistics.The results predicted by the present analysis are compared with those from other sources,and we can hereby draw some useful conclusions.

硅双极微波晶体管的发射极区和基区的杂质浓度都较高,杂质浓度高的程度及其分布随管子不同而异。总的说来,禁带宽度变窄和杂质非全离化,都将产生影响:影响多数载流子浓度和少数载流子浓度,影响晶体管的特性。随着杂质浓度的不同,影响的大小也将不同。禁带宽度变窄和杂质非全离化,只考虑其中之一可能带来不太合理的结果。本文探讨禁带宽度变窄和杂质非全离化两者的影响,将计算结果和实验结果作一比较,由此得出一些重要的结论。

 
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