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负区
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  negative area
     The abnormal negative areas of DI were the same to the domains with local ejection fraction reduction in ventriculography,and we found the negative area′s size had much to do with the amount of those domains.
     且 DI异常负区与心室造影局部射血分数降低的节段相一致 ,其范围与射血分数降低的节段数有关。
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  “负区”译为未确定词的双语例句
     The experimental results show that Si(111)7×7 and its negative zone RHEED pattern, Si(100)2×1, Si(111)× Ni and Si(100)4×2Ni structures are obtained, and the lattice structures of nickel silicide produced during epitaxy with low growing rate (0.16-0.5 A per minute) is the same as that of silicon substrate.
     实验获得了Si(111)7×7以及它的负区衍射图,Si(100)2×1,Si(111)19~(1/2)×19~(1/2)Ni和Si(100)4×2Ni的表面结构。 实验同时表明,在低外延生长速率下(0.15—0.5/min)生成的镍硅化物的晶格结构与硅基底的一样。
短句来源
     To the patients with inferior MI, the negative areas of DI were apppeared of under chest and back at 20 ms of ventrical depolarization, and these negative areas reduced or disappeared at 40~50 ms of QRS.
     下壁 MI在心室除极 2 0 ms时 ,前胸和后背下部均为 DI<- 2的区 ,至 QRS40~ 5 0 ms负区范围缩小或消失。
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  相似匹配句对
     EXPERIMENTAL STUDY OF MODEL OF COMPOSITE BEAMS' NEGATIVE BENDING REGION
     结合梁弯矩模型试验研究
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     negative ministruc-ture includes high water cut;
     向微型构造为高含水
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     Negative bubbles
     气泡
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     and f) synclinorium.
     f)复向斜
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     Be Responsible
     责任
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  negative area
Yan block and northern margin of the Hebei-Shandong block, whereas a negative area occurs in the Shanxi graben.
      
Three patterns were distinguished: a T map resembling normal (type A,n=9); that with an isolated negative area in a positive area (type B,n=11); and that with rightward movement of maximum (type C,n=5).
      
Between the two positive peaks, a negative area, NA, is often observed, which signifies reflections from the cerebral circulation.
      
Height anomaly patterns at the 500 mb level for the last three decades show the expansion of negative area in the northern hemisphere, resulting in increase of variability in space and time.
      
The Central highlands are mostly a positive anomaly except for the Apollo 16 landing site, which is in a negative area.
      
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Clean Si (100) and (111) surfaces produced by the Ar+ ion bombardment and high temperature annealing techniques, and the epitaxial growth of nickel silicides on them at room temperature using molecular beam method are studied by reflection high energy electro diffraction (RHEED). The experimental results show that Si(111)7×7 and its negative zone RHEED pattern, Si(100)2×1, Si(111)× Ni and Si(100)4×2Ni structures are obtained, and the lattice structures of nickel silicide produced during epitaxy with low growing...

Clean Si (100) and (111) surfaces produced by the Ar+ ion bombardment and high temperature annealing techniques, and the epitaxial growth of nickel silicides on them at room temperature using molecular beam method are studied by reflection high energy electro diffraction (RHEED). The experimental results show that Si(111)7×7 and its negative zone RHEED pattern, Si(100)2×1, Si(111)× Ni and Si(100)4×2Ni structures are obtained, and the lattice structures of nickel silicide produced during epitaxy with low growing rate (0.16-0.5 A per minute) is the same as that of silicon substrate.

以反射高能电子衍射的方法研究了用Ar~+离子轰击和高温处理技术获得的洁净的Si(100)和(111)面,以及在室温下这些表面上分子束外延生长镍硅化物。实验获得了Si(111)7×7以及它的负区衍射图,Si(100)2×1,Si(111)19~(1/2)×19~(1/2)Ni和Si(100)4×2Ni的表面结构。实验同时表明,在低外延生长速率下(0.15—0.5/min)生成的镍硅化物的晶格结构与硅基底的一样。

The body surface isopotential mapping of 66 patients with old myocardial infarction is reported. From the body surface isopotential mapping of extensive anterior myocardial infarction, anteroseptal myocardial infarction, ocalized anterior myocardial infarction, inferior myocardial infarction and inferior myocardial infarction combined with anterosepted myocardial infarction, a typical case of each infarction was taken for analysis. Diagrams of infarctions in different positions and in areas of different sizes...

The body surface isopotential mapping of 66 patients with old myocardial infarction is reported. From the body surface isopotential mapping of extensive anterior myocardial infarction, anteroseptal myocardial infarction, ocalized anterior myocardial infarction, inferior myocardial infarction and inferior myocardial infarction combined with anterosepted myocardial infarction, a typical case of each infarction was taken for analysis. Diagrams of infarctions in different positions and in areas of different sizes had their own characteristics and were different from each other. The study shows that the body surface isopotential mapping is of value in infarction localization.

用体表电位标测微机系统(Ⅰ型)检测了66例陈旧性心肌梗塞患者的体表等电位图。发现心肌梗塞QRS的体表等电位图变化主要在心室兴奋的早、中期,相当于心电图上的Q波期;前间壁、广泛前壁和局限性前壁心肌梗塞时,前胸部反映出电兴奋丧失,呈负区;一般坏死范围越大,负区范围也越广,负压值越大。前壁梗塞时,电位图变化主要在心室兴奋的前42ms,晚期图形基本不变;下壁梗塞的,在心室兴奋的早期(18ms)以前,负压在前胸及背部下区,中期多反映在前胸。因此,根据不同梗塞部位及左室不同兴奋时间的体表等电位变化特征,可以诊断出常规胸导心电图正常的心肌梗塞患者。

In this paper, the manifestation of departure maps in old myocardial infarction (OMI) was depicted clinically and compared with the results of radionuclide cardio-angiography and myocardial perfusion tomography by 99m-Tc-CPI.

本文通过临床研究陈旧性心肌梗塞(下简称心梗)的差电位图表现与核素心血管造影及心肌灌注断层显像结果进行对照。80例陈旧性心梗分为前壁、下后壁、前壁+下后壁心梗三组。差电位田显示,心室兴奋早中期,前壁及下后壁心梗组的负区部位、范围及出现时间与心梗后电位丧失区域对应。前壁+下后壁心梗组负区意义难定。差电位图平均负区面积百分比与核素心血管造影所示左室相位分布的标准差及半定量计分法测定的局部相位延迟呈正相关,与左室射血分数之间为负相关。与33例心肌灌注断层显像缺损体积呈正相关。

 
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