The abnormal negative areas of DI were the same to the domains with local ejection fraction reduction in ventriculography,and we found the negative area′s size had much to do with the amount of those domains.
The experimental results show that Si(111)7×7 and its negative zone RHEED pattern, Si(100)2×1, Si(111)× Ni and Si(100)4×2Ni structures are obtained, and the lattice structures of nickel silicide produced during epitaxy with low growing rate (0.16-0.5 A per minute) is the same as that of silicon substrate.
To the patients with inferior MI, the negative areas of DI were apppeared of under chest and back at 20 ms of ventrical depolarization, and these negative areas reduced or disappeared at 40~50 ms of QRS.
Yan block and northern margin of the Hebei-Shandong block, whereas a negative area occurs in the Shanxi graben.
Three patterns were distinguished: a T map resembling normal (type A,n=9); that with an isolated negative area in a positive area (type B,n=11); and that with rightward movement of maximum (type C,n=5).
Between the two positive peaks, a negative area, NA, is often observed, which signifies reflections from the cerebral circulation.
Height anomaly patterns at the 500 mb level for the last three decades show the expansion of negative area in the northern hemisphere, resulting in increase of variability in space and time.
The Central highlands are mostly a positive anomaly except for the Apollo 16 landing site, which is in a negative area.
Clean Si (100) and (111) surfaces produced by the Ar+ ion bombardment and high temperature annealing techniques, and the epitaxial growth of nickel silicides on them at room temperature using molecular beam method are studied by reflection high energy electro diffraction (RHEED). The experimental results show that Si(111)7×7 and its negative zone RHEED pattern, Si(100)2×1, Si(111)× Ni and Si(100)4×2Ni structures are obtained, and the lattice structures of nickel silicide produced during epitaxy with low growing...
Clean Si (100) and (111) surfaces produced by the Ar+ ion bombardment and high temperature annealing techniques, and the epitaxial growth of nickel silicides on them at room temperature using molecular beam method are studied by reflection high energy electro diffraction (RHEED). The experimental results show that Si(111)7×7 and its negative zone RHEED pattern, Si(100)2×1, Si(111)× Ni and Si(100)4×2Ni structures are obtained, and the lattice structures of nickel silicide produced during epitaxy with low growing rate (0.16-0.5 A per minute) is the same as that of silicon substrate.
The body surface isopotential mapping of 66 patients with old myocardial infarction is reported. From the body surface isopotential mapping of extensive anterior myocardial infarction, anteroseptal myocardial infarction, ocalized anterior myocardial infarction, inferior myocardial infarction and inferior myocardial infarction combined with anterosepted myocardial infarction, a typical case of each infarction was taken for analysis. Diagrams of infarctions in different positions and in areas of different sizes...
The body surface isopotential mapping of 66 patients with old myocardial infarction is reported. From the body surface isopotential mapping of extensive anterior myocardial infarction, anteroseptal myocardial infarction, ocalized anterior myocardial infarction, inferior myocardial infarction and inferior myocardial infarction combined with anterosepted myocardial infarction, a typical case of each infarction was taken for analysis. Diagrams of infarctions in different positions and in areas of different sizes had their own characteristics and were different from each other. The study shows that the body surface isopotential mapping is of value in infarction localization.
In this paper, the manifestation of departure maps in old myocardial infarction (OMI) was depicted clinically and compared with the results of radionuclide cardio-angiography and myocardial perfusion tomography by 99m-Tc-CPI.
负区
negative area
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