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光发射器件    
相关语句
  light emitting devices
    On Research and Development Trend for Light Emitting Devices
    论光发射器件研究与发展方向
短句来源
    Five directions for the development of semiconductor light emitting devices are prospected,i. e. ,single longitudinal mode,high speed, high power,visible light and optoelectronic integration technique.
    提出了半导体光发射器件发展的五大方向,即单纵模、高速率、大功率、可见光和光电子集成技术。
短句来源
    BAlGaN quaternaries were proposed for use as light emitting devices operating i n the ultraviolet spectral region.
    人们已提出用BAlGaN四元系材料制备紫外光谱区的光发射器件
短句来源
  light emitting device
    Design and Fabrication of Si-based Vertical Cavity Surface Light Emitting Device
    硅基垂直腔面光发射器件的设计与实现
短句来源
    A novel Si|based vertical cavity surface light emitting device is proposed.
    提出了一种新型硅基垂直腔面光发射器件结构。
短句来源
    A novel Si-based vertical cavity surface light emitting device is proposed, a-Si/a-SiO_2 is fabricated periodically by PECVD as the distributed Bragg reflectors (DBR), while a -Sic:H thin film is fabricated between the bottom DBR and the top DBR by PECVD as the light emitting layer.
    提出了一种新型硅基垂直腔面光发射器件结构。 它采用等离子增强化学气相淀积(PECVD)方法制备的非晶硅/二氧化硅交替生长的多层薄膜结构为布拉格反射器(DBR),以夹在上下两个布拉格反射器之间的非晶碳化硅薄膜为中间发光层。
    A silicon light emitting device is designed and processed in 0.6μm standard CMOS technology inChina. This silicon LED work under reverse bias conditions. The breakdown voltage is 0.88V. The LED emitsvisible light under room temperature.
    用0.6μm的标准CMOS工艺设计和制备了硅光发射器件,该器件工作在硅p-n结的反向击穿状态,击穿电压0.88V,室温下发射可见光,光谱测量表明发光波长介于500-700nm之间,在580nm有一个明显的峰值。
  light emitter
    A Si-based vertical cavity surface light emitter was developed that is compatible with existing IC processes.
    为了实现与现有集成电路工艺兼容的全硅基发光器件,提出了一种新型硅基垂直腔面光发射器件结构。
短句来源
    Design of Si-based vertical cavity surface light emitter
    硅基垂直腔面光发射器件的研制
短句来源
    The recent progress of the three basic optical interconnect devices (light emitter,photo receiver and optical waveguide) and their integration with silicon ICs are overviewed and reviewed.
    介绍了组成芯片上光互连的光发射器件、光接收器件和光传输器件等三种基本器件及其与硅集成电路集成的研究新进展 .
短句来源
    A photoluminescent red light emitter and an electroluminescent blue-green light emitter were fabricated.
    最后研制出光致红光发射器件和电致蓝绿光发射器件,并给出了它们的光致和电致发光谱。
短句来源
  light emitting devices
    On Research and Development Trend for Light Emitting Devices
    论光发射器件研究与发展方向
短句来源
    Five directions for the development of semiconductor light emitting devices are prospected,i. e. ,single longitudinal mode,high speed, high power,visible light and optoelectronic integration technique.
    提出了半导体光发射器件发展的五大方向,即单纵模、高速率、大功率、可见光和光电子集成技术。
短句来源
    BAlGaN quaternaries were proposed for use as light emitting devices operating i n the ultraviolet spectral region.
    人们已提出用BAlGaN四元系材料制备紫外光谱区的光发射器件
短句来源

 

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  light emitting devices
The purpose of this paper is to provide general information about basic physical processes involved in organic electroluminescence and to present the main parameters and advantages of organic light emitting devices (OLEDs).
      
Light emitting devices based on Si nanoclusters: the integration with a photonic crystal and electroluminescence properties
      
We present the properties and potentialities of light emitting devices based on amorphous Si nanoclusters.
      
Crosslinkable hole- and electron-transport materials for application in organic light emitting devices (OLEDs)
      
Organic light emitting devices (OLEDs) are one of the most promising alternatives to liquid crystal displays (LCDs) concerning flat panel display applications.
      
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