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吸收峰     
相关语句
  absorption peak
    We believe that the correction height and the area of the absorption peak of the Y(Eu)—O bond are determined from two factors: the average bond-length and the number of the vibrating-running states of the Y(Eu)—O bond.
    经分析认为:Y(Eu)—O键的吸收峰校正高度和面积由Y(Eu)—O键的平均键长和Y(Eu)—O键振动态数目这两个因素决定.
短句来源
    The infrared spectrum of crystals shows that when Sc doping concentration in Fe:LiNbO3 is over 3mol%,O-H vibration absorption peak of Sc(3mol.%):Fe:LiNbO3 is shifted to 3508 cm-1,comparing with 3484cm-1 of crystals with lower Sc doping level.
    通过晶体红外光谱测试发现:Sc:Fe:LiNbO3晶体中Sc的掺杂浓度超过3mol%时,Sc:Fe:LiNbO3晶体的O-H吸收峰的位置从低掺杂时的3484cm-1移动到3508cm-1。
短句来源
    Electronic Structure and Absorption Peak Shift of Semiconductor Quantum Dots
    半导体量子点的电子结构与其吸收峰波长的移动
短句来源
    Nd~(3+) had a wide absorption peak at 808nm,its emission peak was 1068nm and 1350nm.
    Nd~(3+)离子在808nm有较宽的吸收峰,发射峰位于1068nm及1350nm。
短句来源
    Yb~(3+) had two absorption peak at 940nm and 980nm,its emission peak was between 1020nm and 1060nm.
    Yb~(3+)离子有两个吸收峰,分别位于940nm和980nm,其发射峰在1020~1060nm范围内。
短句来源
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  absorption peaks
    The absorption peaks of o-nitroaniline sample locate at 0.64, 1.07,1.46 and 1.82 THz while the absorption peaks of m-nitroaniline sample are around at 0.82, 1.66 and 2.26 THz;
    邻、间、对硝基苯胺的吸收峰位置分别在0.64、1.07、1.82THz;
    The absorption peaks lying in 1.22THz and 1.67THz in the theoretical results are corresponding to those lying in 1.23THz and 1.67THz in the experimental results.
    应用密度泛函理论,我们计算了它的振动光谱,理论计算发现1.22THz和1.67THz处吸收峰与实验上1.23THz和1.67THz处的吸收峰相对应,两个峰所对应的振动能级间隔约为1.86meV.同时对甲基苯丙胺的远红外振动模式进行了识别。
    Corresponding to the absorbance spectra or the second derivative spectra, selecting the value in main absorption peaks of 1, 086cm -1、 1, 082cm-1、 1,065cm-1、 1,036cm -1and 978cm-1 or the data in the fingerprint region of 1 200cm-1 -900cm-1 , we performed four types of the multiple linear regression analysis.
    分别用 G6P、F6P、Tris的主要吸收峰(1 086cm-1、1 082cm-1、1 065cm-1、1 036cm-1和 978cm-1)的数据或指纹领域(1 200cm-1~900cm-1)全段数据,共进行4种模式多元线性回归分析;
    We observed some new absorption peaks that have not yet been reported. These peaks appear at 1992cm-1 and 1857 cm-1 in non-irradiated and irradiated specimens respectively.
    在未辐照的样品和辐照的样品中分别发现了未曾报道的1992cm~(-1)和1857cm~(-1)吸收峰
短句来源
    The observed saturated absorption peaks have a contrast of 10% at pressure of 27 Pa.
    在640nm范围碘蒸气压为27Pa时,相对饱和吸收峰高可达10%.
短句来源
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  absorption band
    It seems that the absorption band of 573nm and the band of 424, 451nm areresulted from different types of high order aggregate centers.
    实验结果同时还表明,MgO透射吸收谱中位于573 nm的色心吸收峰产生自与位于424、451nm的色心吸收峰类型不同的更高阶的阴离子空位聚集态。
短句来源
    The absorption band edge of the crystal lattice shifts to lower frequency area because of the dopant Co2+, and there is an absorption peak at 1.9THz and the absorption coefficient is more than 70cm-1, the force constant K of F--Co2+ ionic chemical bond stretch vibration calculated from this peak is 3.40×10-2 N/cm.
    Co掺杂使晶格吸收带边向低频移动,而且MgF2:Co晶体在1.9THz有吸收峰,吸收系数达到70cm-1,求出F--Co2+离子键伸缩振动的键力常数K为3.40×10-2N/cm。
短句来源
    It is found that abroad absorption band of Ce~(3+) appears at 460nm and that two kinds of valencestates exist for the dopants Ce or Pr.
    发现在460nm处存在Ce~(3+)的吸收峰和在掺Ce和Pr的晶体中铈、镨有二种价态。
短句来源
    The typical aggregate of dye MOC (1-methyl-l'-octadecyl-2,2'-cyaninpereh-lorate) appears an absorption band (J band) peaking at near 580 nm with absorbanoe of 0.09. The temporal effect of a new sample shows that it takes about 2 hours for the aggregates to be stable.
    典型的染料1-methyl-1’-octadecy1-2,2’-cyaninperchlorate(MOC)LB膜聚集体的吸收峰(J带)在580nm附近,吸收为0.09.刚制备好的样品随时间而改变其吸收特性,表明聚集体的结构在2hr后才趋于稳定;
短句来源
    Optical absorption spectra are measured for pure BTO and Al-doped BTO by using UV-300. At room temperature,pure BTO absorption spectrum shows a broad absorption band when photon energy is between 2.2~3.2eV,which implies an indirect band-to-band energy gap about 2.2eV below the conduction band.
    用自动分光光度计测量自己生长的光折变晶体钛酸铋(BTO)光吸收谱.结果表明,室温下纯BTO晶体的吸收谱在2.2~3.2eV之间存在一个宽吸收峰,说明在晶体的带隙内存在一个间接跃迁能级,离导带顶大约2.2eV;
短句来源
更多       
  absorptive peaks
    Experiment contrast show, the prepared w-type planar hexaferritemicrowave absorptive material appears two absorptive peaks in thefrequency range of (7~l2GHz),its average attel1uation exceed 7dB,themaximum absorptive attenuation is 24dB,coat matching thickness isl. 21mm,especialy its curie temperature is 457C.
    实验结果表明,该种吸收材料在x波段内呈现两个吸收峰,平均衰减量≥7dB,最大吸收峰为24dB,涂层匹配厚度为1.21mm,特别是具有457℃的居里温度。
短句来源
    The emission and excitation spectra have indicated that there are three luminescent substances with different molecular structures in the ethanol-water solution. The fluorescence peaks center at 290 nm,305 nm and 330 nm with the corresponding optimal absorptive peaks located at 265 nm,280 nm and 236 nm,respectively.
    发射光谱和激发光谱表明乙醇水溶液中含有三个结构不同的发光物质,其发射峰分别位于290 nm,305 nm和330 nm处,与其相对应的最佳吸收峰为265 nm,280 nm和236 nm。
短句来源
    The dispersed microstructure model for three-component metal-dielectric composite materials was established, a convenient formula for calculating the effective dielectric function of multi-component composites was deduced. The theoretical calculations about the optical absorptive spectra of (Au,Ag)/SiO2 composite films predicted the existence of multi-resonance absorptive peaks, which were compared with the measured absorptive spectra.
    本文提出了三组份金属颗粒-介质复合体系的一种弥散结构模型,推导出其有效介电函数的关系式,利用该关系式可以很方便地求解出多组份复合体系的有效介电函数值.对(Au,Ag)/SiO2三组份复合体系的光吸收系数进行了理论计算,计算结果给出了多共振吸收峰的存在,与实验测量的光吸收谱进行了对比.
短句来源

 

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      absorption peak
    absorption peak from the electronic spectra is red shifted and the intensity is weakened and that the values of peak current from cyclic voltammetry are decreased significantly in the presence of DNA compared with that in the absence of DNA.
          
    The modified enzyme showed an absorption peak at 337 nm and a fluorescent emission peak at 410 nm, which are characteristic of an isoindole derivative formed by OPTA binding to a thiol and an amine group in proximity within the enzyme.
          
    The modified enzyme showed an absorption peak at 337 nm and a fluorescent emission peak at 410 nm, which are characteristic of an isoindole derivative formed by OPTA binding to a thiol and an amine group in proximity within the enzyme.
          
    A reaction intermediate was obtained in two-phase aqueous-organic system and an absorption peak at 710 nm was confirmed to be that of the intermediate in relation to OPDA.
          
    A reaction intermediate was obtained in two-phase aqueous-organic system and an absorption peak at 710 nm was confirmed to be that of the intermediate in relation to OPDA.
          
    更多          
      absorption peaks
    The hydrolyzed product reacts with resorcinol, giving absorption peaks at 398 and 480 nm.
          
    The analyses of the absorption peaks corresponding to oxygen groups for the PP/PE composite (80/20) show low optical density and, therefore, highly different optical behavior than for pure PP.
          
    Experimental observations are reported of the splitting of NMR lines of 57Fe into two absorption peaks in a static magnetic field H0 parallel to a variable field H1 in the basis plane.
          
    The field dependence of the intensity and the variation in the resonance frequencies of the absorption peaks with H0 are studied.
          
    Between the absorption peaks, the damping decreases sufficiently to enable propagation of unique quantum waves.
          
    更多          
      absorption band
    A retinal analog in which the β-ionone ring is replaced by ferrocene moiety forms a stable chromoprotein with the main absorption band at 483 nm and a shoulder near 590-610 nm.
          
    For 5 min irradiation, the photochemical activity in the absence and in the presence of dithionite decreased by 35 and 72%, respectively (this was accompanied by an irreversible bleaching of the pheophytin Qx absorption band at 542 nm).
          
    Induced Absorption Band of Holotransketolase and Its Interpretation
          
    As regards the new absorption band induced by ThDP binding, its nature, until recently, remained unknown.
          
    Coherent oscillations were studied in the kinetics at 935 nm (P* stimulated emission band), at 1020 nm (BA- absorption band), and at 760 nm (HA absorption band).
          
    更多          


    The presence of Si-H bonds in hydrogen FZ silicon single crystals was confirmed by measurements of infrared absorption spectrum. Three characteristic absorption peaks were found at 4.51, 4.68 and 5.13 μm. By analysing theoretical calculations[3,4], it is believed that hydrogen atoms in silicon lattice are situated on several interstitial sites. Investigation showed that the Si-H bonds formed in crystal growth influences implicitly on the crystal perfection, and it was discovered that there exists a close relationship...

    The presence of Si-H bonds in hydrogen FZ silicon single crystals was confirmed by measurements of infrared absorption spectrum. Three characteristic absorption peaks were found at 4.51, 4.68 and 5.13 μm. By analysing theoretical calculations[3,4], it is believed that hydrogen atoms in silicon lattice are situated on several interstitial sites. Investigation showed that the Si-H bonds formed in crystal growth influences implicitly on the crystal perfection, and it was discovered that there exists a close relationship between the production, of defects by hydrogen and the breakdown of hydrogen-associated bonds at high temperature.

    通过红外吸收光谱的测定,证实了氢气氛浮区硅单晶中存在硅氢键,三个特征吸收峰在4.51,4.68和5.13μm波长处。根据有关的理论计算报道分析,认为氢原子在硅晶格中处于几种间隙位置。研究表明这种在晶体生长中形成的硅氢键对晶体完整性隐含着影响,并发现硅单晶中氢致缺陷的形成与硅氢键在高温下的断裂有密切关系。

    Infrared Absorption measurements of oxygen in silicon and germanium were made with IE Fourier Transform Spectrometer at temperatures between 6 K and 300 K in the region of 400-4000cm-1. Resolution was up to 0.5cm-1 when high resolution conditions were adopted.

    在6—300K下,利用红外傅里叶光谱仪研究了400—4000cm~(-1)间的硅、锗中氧的红外吸收。采用高分辨条件时,分辨率可达0.5cm~(-1)。 研究了在低温下利用硅的1106cm~(-1)吸收峰和锗的855cm~(-1)吸收峰探测硅和锗氧含量的探测限和误差。若样品厚度为2cm,估计在20K下,硅中氧含量探测限~9.6×10~(14)氧原子·cm~(-3),锗中氧含量探测限~3.0×10~(14)氧原子·cm~(-3)。同时,对不同生长条件下直拉锗单晶的氧含量进行了研究,并与用锂沉淀法所求得的锗中氧含量加以比较。 对不同氧含量的硅样品的1106cm~(-1)吸收峰在6—300K的变化进行了观察和讨论。

    The mechanism of the formation of the defects during heat treatment in single silicon crystal, which had been grown by floating zone method under pure hydrogen, have been studied by means of X-ray topography, infrared absorption spectrography and chemical etching method.

    本文用X射线衍射形貌法、红外吸收光谱法和金相腐蚀坑法,探讨了氢气氛区熔硅单晶热处理缺陷的形成机理。 在生长态晶体中存在着三种Si-H键,对应的红外吸收峰波长分别为4.55微米、4.75微米和5.13微米。随着加热过程的进行,Si—H键逐渐分解而消失。5.13微米吸收峰的消失温度是450℃,4.55微米吸收峰的消失温度是600℃,4.75微米吸收峰的消失温度是700℃。 晶体中的热处理缺陷是由于氢沉淀造成的,沉淀过程首先是Si—H键分解,然后是氢的扩散和聚集。沉淀过程的激活能是2.4电子伏特(56000卡/克分子)。 随着氢沉淀的产生,在一定温度下(600—700℃)会在沉淀物周围发射稜柱位错环。

     
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