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   吸收峰 在 无线电电子学 分类中 的翻译结果: 查询用时:0.024秒
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吸收峰
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  absorption peak
    The change of absorption peak when the Mg2+ doping concentration reached the threshold concentration was studied,and the Mg2+ sites in the LiNbO3 crystals were analyzed.
    最后,探讨了Mg2+浓度达到阈值后,吸收峰的变化,并分析了镁离子在晶体中的占位.
短句来源
    We also explained physical origin of the new absorption peak observed at A = 760nm which is tentatively assigned to 2B1(2E) 2E(2T2) electric dipole allowed transition of Cr56 here.
    对位于760nm附近的新吸收峰的起源进行了讨论,并将其归属为四面体格位上Cr5+离子2B1(2E) 2E(2T2)的电偶极允许跃迁。
    Electronic Structure and Absorption Peak Shift of Semiconductor Quantum Dots
    半导体量子点的电子结构与其吸收峰波长的移动
短句来源
    In addition, at low temperature an absorption peak of Fe~(2+) has been found, which can be attributed to the transition ~5E→~3T_1 in the light of the crystal field theory.
    此外,在低温下发现了一个Fe~(2+)吸收峰,根据晶体场理论判定为Fe~(2+)的~5E→~3T_1跃迁吸收峰
短句来源
    FTIR spectra showed a strong absorption peak around 1 060 cm -1 indicating the formation of c BN.
    FTIR 透射谱表明, 在波数约1 060cm - 1 处, 存在很强的cBN 的吸收峰
短句来源
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  absorb peak
    It is observed that the absorb peak position of the amorphous thin film is 20 nm shorter than that of the pollycrystalline one.
    发现非晶态薄膜吸收峰位置较多晶态薄膜向短波移动20nm 。
短句来源
    WT5”BZ]:This paper develop a sensing system of density with optical fiber utilizing the anomalous dispersion and corresponding absorb peak of the matter.
    本文发展一种利用物质的反常色散及相应的吸收峰组成光纤浓度传感系统。
短句来源
    Theory base, implemental program and experiment were introduced,in this paper and utilized material absorb peak of spectrum to select wave length of ligt source and the method of density sensing for optical fiber. The fact shows that is a feasible way to improve selectivity of density detection.
    文中介绍利用物质光谱吸收峰选择光源波长和光纤浓度传感方法的理论基础、实施方案和实验 ,说明这是提高浓度检测选择性的一种可行的途径
短句来源
    A study has been made on optical properties and defects of the sample by means of UV VIS, FT IR and PAT. Results indicate that before irradiation there is an absorb peak at 3360 cm -1 , which die off after irradiation. Electrons irradiated MgAl 2O 4 ceramics introduces tow optical absorption bands at 237 nm and 370 nm which are due to V type absorption and F center.
    利用 PAT、UV- VIS和 FI- IR测试 ,表明辐照前3 3 6 0 cm-1处有吸收峰 ,通过电子辐照样品在 2 3 7nm和 3 70 nm处产生吸收带 ,3 3 6 0 cm-1处吸收峰消失 ,主要是由 VOH-1心及辐照产生的 F心和 V型色心引起的。
短句来源
  “吸收峰”译为未确定词的双语例句
    The self-Q-switched solid-state laser crystal Cr4+, Nd3+:Gd3Ga5O12 (Cr,Nd:GGG) has been grown by the Czochralski method.
    通过测晶体的光谱性质发现:Cr4+,Nd3+:GGG晶体在400nm和520nm附近存在Cr3+离子的强的吸收峰.
    The thin films are detected by the infrared spectrum instrument, X ray diffractioninstrument and the atom force microscope. The results show that the clearly pronoumced peak at 891cm-1 indicates the Si-N bond of the crystal Si3N4. There are also Si - H and N-H bonds because of the existence of hydrogen as impurity.
    对得到的氮化硅薄膜材料,用傅立叶变换红外光谱仪(FTIR)、X射线衍射(XRD)和原子力显微镜(AFM)对其进行分析,结果表明:在891cm~(-1)附近出现由晶态结构的Si_3N_4键形成的振动吸收峰,由于杂质氢的存在还含有Si—H键和N—H键;
短句来源
    Itsabsorption cross-section is bigger than Nd:GdVO4, but smaller than Nd:YVO4. Itsabsorption coefficient is higher than Nd:GdVO4, absorption FWHM in 808.5nm iswider than Nd:GdVO4. thermal conductivity is higher than Nd:YVO4,but its emissioncross-section is relatively smaller and its upper level lifetime is comparatively longer .
    它的吸收系数比Nd:GdVO_4要高,在吸收峰808.5nm处的半高宽比Nd:GdVO_4宽,荧光发射峰都在1064nm附近,Nd:GdYVO4在1064nm附近的荧光半高宽比Nd:GdVO_4宽一倍,所以Nd:YVO_4更有利于LD泵浦。
短句来源
    After high temperature annealing, the infrared spectrum of film is resemble with that of SiO_2.It is concluded that the as-deposited film is reconstructed into polycrystalline grains and SiO_2 during heat annealing, and the SiO_2 component increases with the annealed temperature.
    而从膜的红外吸收谱测量表明膜中含氧量基本不变,但Si-O键吸收峰随着退火温度的升高向高频方向移动,并且愈益接近SiO_2的红外吸收谱. 由此说明高温热退火使无定形的生长层薄膜再结构为Si多晶颗粒和SiO_2.使膜中SiO_2成份随着退火温度升高也跟着增加.
短句来源
    The infrared absorption spectra of NTD CZ Si annealed from room temperature to 1200℃ are reported. The annealing behavior and nature of the neutron radiation defects, and the infrare dabsorption peaks of oxygen and carbon in 600~1300 cm~(-1) wavenumber region, and the temperature dependence of the defects and interstitial oxygen are studied.
    本文报道NTD CZ Si从室温到1200℃退火的红外吸收光谱,研究了600~1300cm~(-1)波数区的一些中子辐照缺陷和氧与碳的红外吸收峰的退火行为和本质,以及中子辐照缺陷与间隙氧随退火温度变化的关系。
短句来源
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  absorption peak
absorption peak from the electronic spectra is red shifted and the intensity is weakened and that the values of peak current from cyclic voltammetry are decreased significantly in the presence of DNA compared with that in the absence of DNA.
      
The modified enzyme showed an absorption peak at 337 nm and a fluorescent emission peak at 410 nm, which are characteristic of an isoindole derivative formed by OPTA binding to a thiol and an amine group in proximity within the enzyme.
      
The modified enzyme showed an absorption peak at 337 nm and a fluorescent emission peak at 410 nm, which are characteristic of an isoindole derivative formed by OPTA binding to a thiol and an amine group in proximity within the enzyme.
      
A reaction intermediate was obtained in two-phase aqueous-organic system and an absorption peak at 710 nm was confirmed to be that of the intermediate in relation to OPDA.
      
A reaction intermediate was obtained in two-phase aqueous-organic system and an absorption peak at 710 nm was confirmed to be that of the intermediate in relation to OPDA.
      
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  absorbed peak
After Deltoid IM injection, dezocine was rapidly absorbed (peak level: 0.6 h after dose), with bioavailability 97%.
      


Here, through the measurements of etch rate, film thickness and refractive index of films, it is shown that the oxygen-doped polycrystalline silicon films have been densified with high temperature annealing.Moreover, infrared spectra of films shows a stable oxygen content and a shift of Si-O band absorption peak to higher frequency with increasing annealing temperature.After high temperature annealing, the infrared spectrum of film is resemble with that of SiO_2.It is concluded that the as-deposited film is...

Here, through the measurements of etch rate, film thickness and refractive index of films, it is shown that the oxygen-doped polycrystalline silicon films have been densified with high temperature annealing.Moreover, infrared spectra of films shows a stable oxygen content and a shift of Si-O band absorption peak to higher frequency with increasing annealing temperature.After high temperature annealing, the infrared spectrum of film is resemble with that of SiO_2.It is concluded that the as-deposited film is reconstructed into polycrystalline grains and SiO_2 during heat annealing, and the SiO_2 component increases with the annealed temperature.

掺氧多晶硅薄膜作为钝化膜已成功地应用于半导体器件.为了适应器件制造过程中的高温热处理,有必要探讨膜的高温热退火物理效应.本文从薄膜的腐蚀速率、膜的厚度以及膜的折射率随不同退火温度的变化,显示了掺氧多晶硅薄膜经高温退火的致密效应.而从膜的红外吸收谱测量表明膜中含氧量基本不变,但Si-O键吸收峰随着退火温度的升高向高频方向移动,并且愈益接近SiO_2的红外吸收谱.由此说明高温热退火使无定形的生长层薄膜再结构为Si多晶颗粒和SiO_2.使膜中SiO_2成份随着退火温度升高也跟着增加.

The infrared absorption spectra of NTD CZ Si annealed from room temperature to 1200℃ are reported. The annealing behavior and nature of the neutron radiation defects, and the infrare dabsorption peaks of oxygen and carbon in 600~1300 cm~(-1) wavenumber region, and the temperature dependence of the defects and interstitial oxygen are studied.

本文报道NTD CZ Si从室温到1200℃退火的红外吸收光谱,研究了600~1300cm~(-1)波数区的一些中子辐照缺陷和氧与碳的红外吸收峰的退火行为和本质,以及中子辐照缺陷与间隙氧随退火温度变化的关系。

In the neutron-irradiated N-type FZ crystal,a set of new radiation-induced IR absorption bands not reported in the literature so far are observed at the low-frequ-ency side of the band 2770cm~(-1) related to the divacancy.The properties and the an-nealing behavior of this set of IR bands are investigated and presented.

N型中子辐照区熔硅单晶中,在与双空位(V_2~-)有关的2770cm~(-1)吸收峰的低频侧发现一组文献中从未报道过的新的吸收峰.对这组吸收峰的性质及其退火行为进行了研究.

 
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