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真空快速
相关语句
  vacuum rapid
     The Behavior of Co-Sputtering Tungsten Silicide After Vacuum Rapid Thermal Annealing
     共溅射钨硅化合物真空快速热退火行为(英文)
短句来源
  quick vacuum
     Study on Quick Vacuum Thawing of Food Material
     食品原料真空快速解冻的研究
短句来源
  “真空快速”译为未确定词的双语例句
     Research of Vacuum Quick Quench for NdFeB
     钕铁硼真空快速凝固技术的研究
短句来源
     The NdFeB vacuum solidifies quickly's casting technique is one of the key crafts that makes a high performance to burn the knot NdFeB magnet.
     钕铁硼真空快速凝固的合金铸造技术是制备高性能烧结NdFeB磁体的关键工艺之一。 根据高性能磁体制造的设计要求,NdFeB合金铸锭微观组织应该具有柱状晶完整、没有α-Fe偏析相,富钕相弥散分布的特点。
短句来源
     Tungsten-silicon films were deposited on oxidized silicon wafers by direct current magnetron Co-sputtering from a W-Si mixture target. Films were then rapid thermal annealed in vacuum at temperature between 500 and 1000℃ for 15 s. The sheet resistance of W-Si films as a function of the annealing temperature shows an anomalous maximum.
     用一个W-Si混合靶源,以直流磁控溅射在SiO_2上共溅射一层W-Si薄膜后,进行500—1000℃,15s的真空快速热退火,发现薄层电阻随退火温度出现一反常的极大值。
短句来源
     The elution yield of 188 Re is more than 70% during a period of three months. The 188 W breakthrough is less than 10 -4 %. Both the radionuclide purity and the radiochemical purity of the 188 Re product solution are more than 99%.
     以生理盐水或生理盐水添加抗坏血酸为淋洗剂,并以真空快速淋洗,发生器在3个月使用期内,淋洗效率达70%以上,188W的穿透率小于10-4%,188Re放射性核纯度和放射化学纯度均大于99%。
短句来源
     This paper reports two ways of the technology of thermochemical liquefaction which are pyrolysis liquefaction and high pressure liquefaction . The measures ofincreasing bio-oil yield is emphatically introduced. Upgraded bio-oil can replace diesel oil as light fuel for vehicle.
     介绍了生物质热加工液化技术中的各种热裂解液化和高压液化工艺,包括流化床、涡流烧蚀反应器、真空快速裂解反应器以及高压釜、半连续固定床等装置的工作原理和生产工艺,分析它们各自的优点和存在的问题,着重讨论了各种工艺提高生物原油产率的措施以及精制生物原油可替代柴油作为车用轻质燃油的方法,指出降低生物原油的生产成本,扩大生产规模是热加工液化的发展方向。
短句来源
  相似匹配句对
     Vacuum Valve With Fast Acting
     快速真空阀门
短句来源
     quick;
     快速
短句来源
     Rapid Gas Quenching in Vacuum Furnace
     真空快速气体淬火
短句来源
     the vacuum operates;
     真空运转;
短句来源
     THE RAPID SEQUENCING METHOD
     快速排序法
短句来源
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  quick vacuum
A simple base wash followed by removal of the solvent and quick vacuum desiccation gave dipyrromethane h in 95% yield.
      
  vacuum flash
Vacuum flash cooling has replaced the air cooling method to a large extent, since emissions are minimized in the closed system.
      


Titanium film is deposited on silicon wafer by means of electron beam evaporation andrefractory metal silicide TiSi_2 is formed by subsequent vacuum rapid thermal annealing at750℃ for 10".SEM, AES and PN junction reverse current measurements show that thecontact properties of TiSi_2 to Si are superior to that of Al to Si.The specific contact resis-tance of TiSi_2 to N~±Si by circular transmission line model extrapolation method is found to beabout one order of magnitude lower than that of Al to Ni±Si.TiSi_2...

Titanium film is deposited on silicon wafer by means of electron beam evaporation andrefractory metal silicide TiSi_2 is formed by subsequent vacuum rapid thermal annealing at750℃ for 10".SEM, AES and PN junction reverse current measurements show that thecontact properties of TiSi_2 to Si are superior to that of Al to Si.The specific contact resis-tance of TiSi_2 to N~±Si by circular transmission line model extrapolation method is found to beabout one order of magnitude lower than that of Al to Ni±Si.TiSi_2 may be a new promi-sing interconnection material in LSI or VLSI for scaling down the device dimensions and im-proving the performence of submicrometer N channel devices.

用电子束蒸发方法在硅上淀积一薄层Ti膜后,经750℃、10秒的真空快速热退火即可形成难熔金属硅化物TiSi_2.通过扫描电镜、俄歇能谱和PN结反向电流的检测,证实其对硅的接触性能较铝对硅的优越.由圆性传输线模型外推法测得TiSi_2对N~+-Si的接触电阻率要比Al对N~+-Si的低一个量级.这使 TiSi_2作为 LSI、VLSI中互连线的新材料,在缩小器件尺寸和改善亚微米N沟器件性能方面是大有前途的.

Tungsten-silicon films were deposited on oxidized silicon wafers by direct current magnetron Co-sputtering from a W-Si mixture target. Films were then rapid thermal annealed in vacuum at temperature between 500 and 1000℃ for 15 s. The sheet resistance of W-Si films as a function of the annealing temperature shows an anomalous maximum. This phenomenon has been studied by using XRD. We observed that there were W_5Si_3 appeared in the annealed films at temperature up to 1100℃, which contributed partly to the sheet...

Tungsten-silicon films were deposited on oxidized silicon wafers by direct current magnetron Co-sputtering from a W-Si mixture target. Films were then rapid thermal annealed in vacuum at temperature between 500 and 1000℃ for 15 s. The sheet resistance of W-Si films as a function of the annealing temperature shows an anomalous maximum. This phenomenon has been studied by using XRD. We observed that there were W_5Si_3 appeared in the annealed films at temperature up to 1100℃, which contributed partly to the sheet resistance.

用一个W-Si混合靶源,以直流磁控溅射在SiO_2上共溅射一层W-Si薄膜后,进行500—1000℃,15s的真空快速热退火,发现薄层电阻随退火温度出现一反常的极大值。用转靶X射线衍射研究分析了这一反常现象。在直至1100℃高温退火的样品中发现薄膜中存在W_5Si_3。它对薄层电阻有一定的贡献。

The UHV fast closing valve (FCV)is the key device for the vacuum interlock protection system of the beamlines at National Synchrotron Radiation Laboratory(NSRL). The FCV controller is requested to have short response time,big instant power and high noise immunity against strong electronmagnetic noise around the storage ring.This paper introduces the design and analyzing of the FCVcontroller.As compared with the typical design of FCV controller,the work has made an innovatory improvement,and greatly improves...

The UHV fast closing valve (FCV)is the key device for the vacuum interlock protection system of the beamlines at National Synchrotron Radiation Laboratory(NSRL). The FCV controller is requested to have short response time,big instant power and high noise immunity against strong electronmagnetic noise around the storage ring.This paper introduces the design and analyzing of the FCVcontroller.As compared with the typical design of FCV controller,the work has made an innovatory improvement,and greatly improves the quality of the vacuum interlock protection system for beamlines at NSRL.

本文介绍了超高真空快速关闭阀是国家同步辐射实验室光束线真空联锁保护和控制系统的关键部件。快速关闭控制器则要求反应速度快、瞬时功率大、抗干扰能力强。本文介绍快速关闭阀控制器的设计与解析,对传统的快速关闭阀控制器有创新的改进措施。

 
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