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陷阱电荷     
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  trapped charges
     Influence of low energy Si~+ ion implantation on crystallization and trapped charges of polypropylene thin film
     低能Si~+离子注入聚丙烯薄膜对其结晶度及陷阱电荷的影响
短句来源
     The characteristics of the charges in tunnel oxide of FLOTOX MOS transistor under cyclic field stress have been tested and analyzed by an oxide dynamic current relaxation spectroscopy methold, which provide an experimental basis for analyzing the influence of the trapped charges on the threshold voltage of the FLOTOX EEPROM.
     利用氧化层动态电流弛豫谱分析方法,测试分析了在周期性电场应力下FLOTOXMOS管隧道氧化层中陷阱电荷的特性,为研究陷阱电荷对FLOTOX EEPROM 阈值电压的影响提供了实验依据。
短句来源
     An Improved Charge Pumping Method to Study Distribution of Trapped Charges in SONOS Memory
     利用改进的电荷泵法研究SONOS存储器陷阱电荷的分布特性(英文)
短句来源
     The TSC measurement and infrared spectrum analysis indicated that trapped charges, degree of crystallization and stereoregularity of the thin film were all decreased after Si+ ion implantation with the energy of 55 keV and the dose of 3×1015/cm2. Existance of implanted ions would result in the increase of short range spiro-structure and hence' induce modificati.
     实验表明,在能量为55keV,剂量为3×10~(15)/cm~2的条件下对聚丙烯薄膜进行Si~+离子注入,通过TSC和红外光谱分析发现,材料的陷阱电荷得到大幅度下降。 其红外结晶度及立构规整度均有明显的下降。
短句来源
     This paper presents an experimental method for measuring the density of trapping charges. This method is based on the dynamic equilibrium equation for the process of trapped charges. We can obtain the density and the location of trapping charges by measuring the high frequency C\|V curve of MOS capacitance before and after stress,and the change of gate voltage under constant current stress.
     提出了一种测量陷阱电荷密度的实验方法 ,该方法根据电荷陷落的动态平衡方程 ,利用恒流应力前后MOS电容高频C V曲线结合恒流应力下栅电压的变化曲线求解陷阱电荷密度及位置等物理量 .
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  trapped charge
     The results show that these MIS structures exhibit ideal C-V characteristics. The interface state density of 2.4×10~(11)cm~(-2)·eV~(-1) and oxide trapped charge of 10~9~10~(10)cm~(-2) were obtained for these MIS structures.
     结果表明这些MIS结构具有良好的C-V特性,SiO_2/GaInAs界面在密度最低达 2.4×10~(11)cm~2·eV~(?) ,氧化物陷阱电荷密度达10~(?)
短句来源
     For two samples,the distribution distances of ionizing radiation trapped charge in the vicinity of Si SiO 2 interface are calculated to be 4nm by using the tunneling effect after ionizing radiation.
     利用电离辐射后的隧道退火效应 ,计算出二种样品电离辐射陷阱电荷在Si- Si O2 界面附近分布的距离均约为 4nm .
短句来源
     Study on Ionizing Radiation Trapped Charge in Thin SiO_ 2 MOS Capacitors
     薄二氧化硅MOS电容电离辐射陷阱电荷研究
短句来源
     The generation of oxide trapped charge, the property of interface state and the annealing behaviour of hole tiap for low-energy X-ray irradiated nMOS transistors are investigated in this paper.
     本文研究了NMOS晶体管低能X射线辐照后氧化物陷阱电荷的产生、界面态的性质及空穴陷阱的退火特性等问题。
短句来源
     High electric field annealing effect in thin gate oxide of MOS structure is studied in depth, and the detrapping mechanisms of trapped charge in the gate oxide are investigated.
     深入研究了MOS结构中薄栅氧化层在高电场下的退火效应 ,对氧化层陷阱电荷的退陷阱机理进行了深入探讨 .
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  trap charge
     The effect of electric field modulation on OCRS (Oxide current Relaxation Spectroscopy)has been studied based on single trap charge trapping model.
     本文用单陷阱电荷俘获模型研究了电场调制效应对氧化层电流弛豫谱(Oxide CurtentRelaxation Spectroscopy)——简称 OCRS的影响.
短句来源
     In order to study the dependence of optical and electronic performance of Organic Light Emitting Diode (OLED) on working parameters, the experimental data of ITO/TPD(50nm)/Alq3 (50nm)/Mg/Al were analyzed. It is found that the conduction type of the device is injecting current limited in low voltage area and trap charge limited (TCLC) in high voltage area.
     为了研究有机电致发光器件光电性能随工作参数的变化,对ITO/TPD(50nm)/Alq3(50nm)/Mg/Al的实验数据进行分析,发现该器件在低压时属于注入电流限制,高压时为陷阱电荷限制(TCLC)。
短句来源
     Results show that,for DC characteristics,the added depletion layer induced by surface trap charge will cause saturation current decrease,output resistance increase,pinch-off voltage drift to right,and transconductance reduction,and for transient characteristics,slow change of the surface trap charge will result in the gate-lag phenomenon.
     数值模拟表明,在直流特性上,由于表面陷阱电荷引入附加耗尽层,器件饱和电流下降,输出电阻增加,夹断电压向右偏移,跨导降低;
短句来源
     Total dose radiation hardness of MOSFETs is strongly dependent on the processing technology. NMOS and PMOS transistors fabricated with dry oxides under different conditions are analyzed for their radiation responses The contribution of oxide trap charge and interface trap to threshold voltage shift is separated by means of subthreshold I V technique Finally,optimal process conditions for dry oxide total dose radiation hardening are obtained
     MOSFET总剂量加固强烈依赖于工艺技术,对干氧方式下不同条件制备的NMOS、PMOS管,分析其辐照响应,并借用亚阈值I—V技术分离氧化物陷阱电荷和界面陷阱对阈值电压漂移的贡献,得出较佳的干氧抗总剂量加固工艺条件
短句来源
     A series of experiments show that the write/erase period, t he pulse voltage amplitude and the pulse width all affect the variation of the t hreshold voltage. It is also found that the trap charge resulting from the tunne l oxide proves to be the main cause of the threshold voltage degradation of FLOT OX E2PROM, as it can increase or decrease the threshold voltage by affecting t he injected electric field.
     实验表明 ,擦 /写电压应力周期、脉冲电压应力大小及脉冲宽度的变化都会影响FLOTOXE2 PROM阈值电压的变化 ,分析认为隧穿氧化层中产生的缺陷 (陷阱电荷 )是引起FLOTOXE2 PROM阈值电压退化的主要原因 ,隧道氧化层中的陷阱电荷通过影响注入电场使阈值电压增加或减少 .
短句来源
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  trapping charges
     A method for measuring the density of trapping charges in thin gate oxides
     薄栅氧化层中陷阱电荷密度的测量方法
短句来源
     This paper presents an experimental method for measuring the density of trapping charges. This method is based on the dynamic equilibrium equation for the process of trapped charges. We can obtain the density and the location of trapping charges by measuring the high frequency C\|V curve of MOS capacitance before and after stress,and the change of gate voltage under constant current stress.
     提出了一种测量陷阱电荷密度的实验方法 ,该方法根据电荷陷落的动态平衡方程 ,利用恒流应力前后MOS电容高频C V曲线结合恒流应力下栅电压的变化曲线求解陷阱电荷密度及位置等物理量 .
短句来源
     The analytical expression of the density of trapping charges is proposed. The method and the results of parameters extraction are also presented.
     给出了陷阱电荷密度的解析表达式和相关参数的提取方法和结果 .
短句来源

 

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  trapped charges
The specific features of the radical buildup kinetics were associated with the two factors, the restrictions for hole and electron trapping sites and the set of recombination reactions including tunneling recombination of trapped charges.
      
The ratio of the free charges to trapped charges (trapping factor) for the doped samples was found to be 1.07 × 10-7.
      
The model allows in particular to discriminate the contributions to the optical conductivity of trapped charges (polarons) and mobile charge carriers.
      
The volume of the C-V curve shift along the voltage axis due to trapped charges is dependent upon the density of the trapped charges.
      
The result of these studies is that aging influences the magnitude of the electrical polarization within the glassy state and the thermal stability of the polarization originating from the frozen-in dipole orientation and from trapped charges.
      
更多          
  trapped charge
These traps feature normal kinetic properties in the state with a single trapped charge carrier and feature anomalous kinetic properties in the state with two charge carriers.
      
The capacitance-voltage curves are used to measure the trapped charge in the insulator and the density of surface states.
      
For the detectors studied, flicker noise was absent even when the trapped charge in the field oxide increases by one order of magnitude.
      
The trapped charge is estimated from the amount of irradiation-induced electrification of high-resistivity materials.
      
The energy position of the electron trapping centers, the magnitude and "centroid" of the trapped charge, and the ratio of the charge trapped in the insulator to that transmitted by the structure were determined.
      
更多          
  trap charge
This was due to the poor quality of both the LPCVD oxide bulk (manifest as a hysteretic instability exceeding one Volt in 20 nm films) and the LPCVD oxide-silicon interface (interface trap charge and fixed charge exceeding 1012 cm-2).
      
Films with more Si-H bonds and stable (Si-H/ N-H) ratios generally have lowerVfb shift, less positive trap charge and higher breakdown dielectric strength.
      
Interface trap and fixed oxide charge densities are separated by use of the interface trap charge neutral point.
      
If diamonds are exposed to radiation some of their defects will trap charge carriers and get saturated.
      
In this work, we have explored the MOS interface-trap charge pump as an ultralow current generator for analog CMOS applications.
      
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