助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   激子吸收峰 的翻译结果: 查询用时:0.013秒
图标索引 在分类学科中查询
所有学科
化学
更多类别查询

图标索引 历史查询
 

激子吸收峰
相关语句
  exciton absorption peak
     The result shows that third order susceptibility of CdS0.4Se0.6 doped glass is only a little larger than its glass matrix and quantum size effect does not increase third prder susceptibility of CdS0.4Se0.6 microcrystallites significantly in doped glasses in non-resonant transparency. The evident change also was not found aIthough a small exciton absorption peak appears.
     研究结果表明,在非谐振透明区,CdS_(0.4)Se_(0.6)掺杂玻璃的三阶非线性极化率并不比它的基底玻璃大很多.量子尺寸效应没有有意义地提高掺杂玻璃中CdS_(0.4)Se_(0.6)微晶的三阶非线性极化率,即使较小激子吸收峰的出现也没有发现明显的变化。
短句来源
     The variation method was used to calculate the lowest eigenenergy of electrons and holes and the binding energy of excitons in Ⅱ Ⅵ quantum well Zn 0.8 Cd 0.2 Se/ZnSe for different well widths and different electric fields. The obtained data on E e, E h and E b were used to compute the Stark shift of the exciton absorption peak.
     用变分法计算了在不同量子阱宽度、不同外电场强度下 ,Zn0 .8Cd0 .2 Se/ Zn Se量子阱中电子、空穴基态能量及激子束缚能的变化规律 ,并根据所得的 Ee、Eh 和 Eb 数据 ,计算出激子吸收峰的 Stark移动 .
短句来源
     Monodispersion CdSe nanocrystalline with obvious exciton absorption peak and stronger band-edge photoluminescence were prepared in organic coordinating solvent.
     在有机配位溶剂中制备了具有明显的激子吸收峰和较强的带边荧光峰的尺寸单分散纳米CdSe超微粒。
  excitonic absorption peaks
     Three excitonic absorption peaks corresponding to 1 E-l HH, 1E-1 LH and 1E-3HH transitions were observed.
     观测到对应于1E-1HH1E-1LH及1E-3HH跃迁的三个激子吸收峰.
短句来源
  “激子吸收峰”译为未确定词的双语例句
     While the electric field is stronger than 0.74 MV/cm, the exciton is dissociated into a soliton and an anti soliton, and the single peak of the exciton absorption is splitted into two peaks at 1.1 eV and 1.4 eV, associated with the electron soliton and hole soliton.
     当电场超过 0 .74MV cm时 ,激子解离成一对正反纽结孤子 ,此时 ,激子吸收峰分裂成 1.1和 1.4eV左右的两个峰 ,分别对应于电子型孤子和空穴型孤子 .
短句来源
     As the field was stronger than 925 kV/cm, the exciton was dissociated into a soliton and an anti-soliton, while zero-field absorption of the exciton was splitted into two peaks at 1.1 eV and 1.4 eV, which was consistent with the observed two short-lived peaks (1.0 eV and 1.3 eV ) of the photoinduced absorption in the polymer.
     当电场超过925kV/cm时,激子解离成一对正反纽结孤子,激子吸收峰分裂成1.1 eV和1.4 eV左右的两个峰,分别对应于电子型孤子和空穴型孤子。 由此我们对实验上已观察到的1.0 eV 和1.3 eV两个短寿命低能吸收峰的成因作出了的解释。
短句来源
     21H. 22H exciton absorption peaks. For the first time, the change of selectionrule in InGaAs/GaAs quantum wells caused by surface electric field is investigated by asimple PV method.
     本文报道用MOCVD方法制作高质量的InGaAs/GaAs应变量子阱材料.单量子阱样品在室温光伏谱中出现清晰的11H、12H、21H和22H激子吸收峰.首次用室温光伏方法研究表面自建电场导致InGaAs/GaAs量子阱中子带间跃迁选择定则的改变.
短句来源
     For the perovskite of (C4H9NH3)2PbCl4, strong UV-Vis absorption at 332 nm was observed, and the full width at half maximum is narrow.
     发现(C4H剥H3)ZPbC14在332llln处有很强的紫外吸收,而且激子吸收峰非常非常尖锐,具有很好的色纯度和热学稳定性,适于制备光电器件的基础材料;
短句来源
     The absorption of the longitudinal optical (LO) phonons and the free-excitons was observed at room temperature.
     观测到了纵光学波 (LO)声子吸收峰与自由激子吸收峰 ;
短句来源
更多       
  相似匹配句对
     And it makes the absorption peak of the exciton move to higher energy.
     并使激子吸收从红外波段进入可见光波段 .
短句来源
     Picosecond absorption spectra of excitons in GaAs
     GaAs激子吸收的微微秒光谱
短句来源
     The exciton absorption resonaces (HH and LH) and step accumu-tive density Of state have been observed.
     观察到轻、重空穴对应的激子吸收(LH和HH)及台阶状态密度.
短句来源
     Absorption peak was not shown by UV absorption spectrum.
     紫外光谱测定无明显吸收
短句来源
     A study of wavelength shift on absorption peak
     关于吸收波长移动的探讨
短句来源
查询“激子吸收峰”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法,我们为您准备了出自英文原文的大量英语例句,供您参考。
  excitonic absorption peaks
The excitonic absorption peaks were observed in these films at room temperature.
      


We have, for the first time, studied photoacoustic absorption spectrum of intrinsic absorp-tion edge of singlecrystalline MoS_2 at room temperature in the wavelength range of 540 to 740nm,and have found A, B two exciton absorption peaks and impurity peak. The experimental re-sults are in good agreement with previous crees obtained from transmission measurements andthe photocurrent spectrum.

本文首先利用光声压电法,研究了MoS_2单晶在540-740nm波段的室温本征吸收边的光声吸收光谱,得到了在2.0eV附近的A、B两个强激子的吸收峰及杂质峰A,与以前报道的用透射光谱法测得的吸收谱及光电流谱的结果一致.

The exciton absorption spectra of GaAs/GaAlAs MQW structures at temperatures between10k to 292k are measured.The exciton absorption resonaces (HH and LH) and step accumu-tive density Of state have been observed. The energy differences between light hole and heavyhole exciton absorption resonaces have been investigated. We also investigated the temperaturedependenc of the linewidth of HH exciton absorotion resonace.The LO phono broadenningconstant Fb in our sample is 6.1 meV which is smaller than that of the...

The exciton absorption spectra of GaAs/GaAlAs MQW structures at temperatures between10k to 292k are measured.The exciton absorption resonaces (HH and LH) and step accumu-tive density Of state have been observed. The energy differences between light hole and heavyhole exciton absorption resonaces have been investigated. We also investigated the temperaturedependenc of the linewidth of HH exciton absorotion resonace.The LO phono broadenningconstant Fb in our sample is 6.1 meV which is smaller than that of the bulk GaAs, TheGaAs/GaAlAs MQW structures of 120 periods are grown on [100] oriented Cr-doped GaAs su-bstrate by MBE in the institute of semiconductors of chinese Academy of sciences.The GaAssubstrate is removed by selective chemical etching,leaving the MQW structures exposed over1mm~2 area.

在10K至292K温度范围内测量了GaAs/GaAlAs多量子阱结构的激子吸收谱.观察到轻、重空穴对应的激子吸收峰(LH和HH)及台阶状态密度.研究了轻、重空穴激子吸收峰的能量间隔及激子吸收峰的温度特性.发现多量子阱样品的LO声子展宽系数为6.1meV,比体GaAs的展宽系数略小.样品用国产MBE设备生长,采用化学选择腐蚀技术除去GaAs衬底.

Transverse photocurrent spectra and absorption spectra of MBE GaAs/AlGaAs MQWshave been studied.The photocurrent spectra show various exciton peaks and an extrinsic absorptionfrom acceptor levels in the wells to the n=1 electron subband.From both allowed andforbidden transitions,two electron and five hole subbands are determined. Our data are inexcellent agreement with a square well calculation using Q_c=0.60, m_e=0.0665, m_h=0.45 andm-l=0.12. A comparison of absorption spectra with photoluminescence spectra...

Transverse photocurrent spectra and absorption spectra of MBE GaAs/AlGaAs MQWshave been studied.The photocurrent spectra show various exciton peaks and an extrinsic absorptionfrom acceptor levels in the wells to the n=1 electron subband.From both allowed andforbidden transitions,two electron and five hole subbands are determined. Our data are inexcellent agreement with a square well calculation using Q_c=0.60, m_e=0.0665, m_h=0.45 andm-l=0.12. A comparison of absorption spectra with photoluminescence spectra has been made.

研究了MBE GaAs/AlGaAs多量子阱结构的横向光电流谱和光吸收谱。在光电流谱中观测到多种允许和禁戒的激子吸收峰以及一个阱中受主态至n=1电子态的非本征吸收峰。确定出5个空穴子带至2个电子子带的跃迁以及这些子带的间距。采用简单带方势阱模型并取参数Q_c=0.6,m_c=0.0665,m_h=0.45和m_l=0.12的计算结果与实验数据符合得相当好。将光吸收谱与光荧光谱进行了比较。

 
<< 更多相关文摘    
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关激子吸收峰的内容
在知识搜索中查有关激子吸收峰的内容
在数字搜索中查有关激子吸收峰的内容
在概念知识元中查有关激子吸收峰的内容
在学术趋势中查有关激子吸收峰的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社