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超快反射谱
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     The ultrafast dynamics property of the GaAs carrier is studied with the femtosecond transient reflection spectroscopy method.
     利用飞秒瞬态反射,研究了GaAs的载流子的动力学特性。
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     Ultrafast Absorption Spectra of Nanocrystal ZnSe Material
     ZnSe纳米晶材料的吸收
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     ULTRAFAST X-RAY DIFFRACTION
     X射线衍射
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     3. Using ultrafast pump-probe reflectivity spectroscopy, the reflectivity dynamics of photoexcited carriers in Fe implanted InP was studied.
     3.应用泵浦—探测反射研究了掺Fe的InP中的光生载流子的反射动力学。
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     Measuring thickness of cylindrical tubes with spectra of ultrasonic pulse echoes
     用声脉冲反射评价圆管厚度的实验研究
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The ultrafast process in semiconductor was studied by using femtosecond pulse laser. The momentum relaxation of carriers excited by laser was detected by using ultrafast photo-voltage spectra. The time of momentum relaxation of carriers in semiconductor Si is about 70 femtosecond, which is related to the probability of carrier-carrier scattering. In SiGe quantum dot, it is about 130 femtosecond due to the decrease of carrier-carrier scattering. The energy relaxation and diffusion processes can be measured by...

The ultrafast process in semiconductor was studied by using femtosecond pulse laser. The momentum relaxation of carriers excited by laser was detected by using ultrafast photo-voltage spectra. The time of momentum relaxation of carriers in semiconductor Si is about 70 femtosecond, which is related to the probability of carrier-carrier scattering. In SiGe quantum dot, it is about 130 femtosecond due to the decrease of carrier-carrier scattering. The energy relaxation and diffusion processes can be measured by ultrafast reflection spectra. The time of energy relaxation of carriers excited by high energy laser is about several picoseconds, which is related to the probability of carrier-phonon scattering, and the diffusion time of carriers excited by low energy laser is about several hundreds picoseconds.

用飞秒脉冲激光技术研究了半导体中的超快过程.通过用超快光生电压谱对激光激发载流子的动量弛豫过程进行检测,得到在半导体硅中载流子的动量弛豫时间约为70飞秒,该过程与载流子与载流子的散射几率有关;对于锗硅量子点,由于载流子的散射几率下降,使动量弛豫时间增加至130飞秒.用超快反射谱法测量了载流子的能量弛豫过程和扩散过程,用高能量激光激发得到载流子的能量弛豫时间约为几个皮秒,这与载流子与声子的散射几率密切相关;而用低能量激光激发可得到光生载流子的扩散时间约为1百皮秒量级.

 
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