助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   halo结构 的翻译结果: 查询用时:0.502秒
图标索引 在分类学科中查询
所有学科
无线电电子学
更多类别查询

图标索引 历史查询
 

halo结构
相关语句
  halo structure
     A New Direct Tunneling Gate Current Model for Short Channel MOSFETs with HALO Structure
     一个适用于短沟HALO结构MOS器件的直接隧穿栅电流模型
短句来源
     The Halo structure device can restrain the SCE effectively, and improve the device performance greatly with good doping distribution in the Halo region.
     Halo结构能够有效地抑制短沟道效应,合理的Halo区掺杂分布会极大地改善小尺寸器件性能。
短句来源
  “halo结构”译为未确定词的双语例句
     Stress-Dependent Hot Carrier Degradation for pMOSFETs Structure Under Stress Mode V_g=V_d/2
     HALO结构pMOSFETs在V_g=V_d/2应力模式下应力相关的热载流子退化
短句来源
     But to exert the Halo structural advantages and potential sufficiently, there is much work to be done no only on modeling of Halo MOSFET but numerical simulation.
     但要充分发挥Halo结构的优势和潜力,无论在器件建模和数值模拟上都有很多工作要做。
短句来源
     In this paper, influence of Halo process parameter on device performance is researched and optimized with ISE-TCAD tools.
     文中采用器件和工艺模拟工具ISE-TCAD研究形成Halo结构的工艺参数对器件性能的影响,并进行优化。
短句来源
     Aiming at the better application in the low power circuit,device performance of asymmetrical Halo LDD structure is investigated in comparing with normal device,asymmetrical Halo device and asymmetrical LDD device. Furthermore,the optimal structure is analyzed by changing the key device parameters.
     分析了非对称 HaloL DD器件的主要特性 ,并将其与常规结构、非对称 L DD结构、非对称 Halo结构的器件进行了比较并进行了参数优化分析 .
短句来源
     In order to suppress drain-induced barrier lowering in dual material gate SOI MOSFETs,halo doping is used in the channel near the source.
     为了抑制异质栅SOI MOSFET的漏致势垒降低效应,在沟道源端一侧引入了高掺杂Halo结构.
短句来源
  相似匹配句对
     Compared the actuality of the structure of th
     *; 结构;
短句来源
     Using AFS algebra and AFS structure, any human ordinary fuzzy concept can be represented.
     结构
短句来源
     APPLICATION OF HALO-VEST IN STABLE RECONSTRUCTION OF UNSTABLE UPPER CERVICAL SPINE
     Halo-vest在重建上颈椎稳定性中的应用
短句来源
     Dual Material Gate SOI MOSFET with a Single Halo
     异质栅非对称Halo SOI MOSFET(英文)
短句来源
     Objective:To improve the reductive function of HaloVest frame.
     目的:提高Halo-Vest架复位功能。
短句来源
查询“halo结构”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法,我们为您准备了出自英文原文的大量英语例句,供您参考。
  halo structure
Neutron-neutron correlation approach for 11Li halo structure investigation
      
The superposition of AMD determinants is shown to reproduce neutron halo structure.
      
Analysis of Coulomb displacement energies and its relation to the proton halo structure of nuclei
      
We discuss experiments that probe a halo structure through studying different reactions with halo nuclei.
      
The results on nuclear-matter radii and matter distributions are presented, and the significance of the data for a halo structure is discussed.
      
更多          


A shell model calculation is carried out for nuclei with 9≤A≤14 and 3≤Z≤5. In the calculation 8He is treated as a core. The data for 24 experimental energy spectra are selected to determine the parameters of the modified surface δinteraction (MSDI) and the single-particle energies. The RMS=0.72MeV. Then the binding energies, the low-lying excited energy spectra and the electromagnetic properties are calculated and the results are in good agreement with experiment in general. The micromechanism of the halo structure...

A shell model calculation is carried out for nuclei with 9≤A≤14 and 3≤Z≤5. In the calculation 8He is treated as a core. The data for 24 experimental energy spectra are selected to determine the parameters of the modified surface δinteraction (MSDI) and the single-particle energies. The RMS=0.72MeV. Then the binding energies, the low-lying excited energy spectra and the electromagnetic properties are calculated and the results are in good agreement with experiment in general. The micromechanism of the halo structure and the parity conversion of the 11Be are discussed in detail. This work is carried out with the OXBASH code.

对9≤A≤14,3≤Z≤5的核进行了壳模型计算.以8He作为core,选用修正的表面δ相互作用(MSDI)作为残余相互作用,挑选了24个实验能谱数据,定出了MSDI的参数和单粒子能量,并计算了结合能、低激发谱、电磁性质等,得到与实验较符合的结果.并着重讨论了"Be的宇称反转和halo结构的物理机理.计算程序为OXBASH.

A novel n-MOSFET device structure,named as asymmetrical Halo LDD Low Power device,is proposed.The device not only can effectively suppress the short-channel effect (SCE),the drain-induced barrier lowering (DIBL) and hot carrier effect,but also attribute to reduce power dissipation.Aiming at the better application in the low power circuit,device performance of asymmetrical Halo LDD structure is investigated in comparing with normal device,asymmetrical Halo device and asymmetrical LDD device.Furthermore,the optimal...

A novel n-MOSFET device structure,named as asymmetrical Halo LDD Low Power device,is proposed.The device not only can effectively suppress the short-channel effect (SCE),the drain-induced barrier lowering (DIBL) and hot carrier effect,but also attribute to reduce power dissipation.Aiming at the better application in the low power circuit,device performance of asymmetrical Halo LDD structure is investigated in comparing with normal device,asymmetrical Halo device and asymmetrical LDD device.Furthermore,the optimal structure is analyzed by changing the key device parameters.

提出了一种新的器件结构——非对称 Halo L DD低功耗器件 ,该器件可以很好地抑制短沟效应 ,尤其可以很好地改善 DIBL效应、热载流子效应以及降低功耗等 ,是低功耗高集成度电路的优选结构之一 .分析了非对称 HaloL DD器件的主要特性 ,并将其与常规结构、非对称 L DD结构、非对称 Halo结构的器件进行了比较并进行了参数优化分析 .

The direct tunneling current of a short channel MOSFET with a HALO structure is investigated,and a new direct tunneling gate current model is obtained.It is found that the extension regions of the gate/source and gate/drain decrease the direct tunneling gate current density because the flat band voltage between the gate/source and gate/drain is higher than that of the substrate.The extension regions reduce direct tunneling current continuously as the channel length decreases.A new direct tunneling gate current...

The direct tunneling current of a short channel MOSFET with a HALO structure is investigated,and a new direct tunneling gate current model is obtained.It is found that the extension regions of the gate/source and gate/drain decrease the direct tunneling gate current density because the flat band voltage between the gate/source and gate/drain is higher than that of the substrate.The extension regions reduce direct tunneling current continuously as the channel length decreases.A new direct tunneling gate current model is obtained by comparing the simulation and experimental results.This model is applicable to the devices with an ultra thin gate oxide(2~4nm),a short channel(0.13~0.25μm),and a HALO structure.

对沟道长度从10μm到0.13μm,栅氧化层厚度为2.5nm的HALO结构nMOS器件的直接隧穿栅电流进行了研究,得到了一个适用于短沟道HALO结构MOS器件的直接隧穿栅电流模型.随着沟道尺寸的缩短,源/漏扩展区占据沟道的比例越来越大,源漏扩展区的影响不再可以忽略不计.文中考虑了源/漏扩展区对直接隧穿栅电流的影响,给出了适用于不同HALO掺杂剂量的超薄栅(2~4nm)短沟(0.13~0.25μm)nMOS器件的半经验直接隧穿栅电流模拟表达式.

 
<< 更多相关文摘    
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关halo结构的内容
在知识搜索中查有关halo结构的内容
在数字搜索中查有关halo结构的内容
在概念知识元中查有关halo结构的内容
在学术趋势中查有关halo结构的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社