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晶体管     
相关语句
  transistor
     Study of High Image Quality Amorphous-Silicon Thin Film Transistor Liquid Crystal Displays
     高像质非晶硅薄膜晶体管液晶显示器的研究
短句来源
     The Research about the Noise for the Reliability of High Power Semiconductor Laser and Bipolar Transistor
     噪声用于半导体大功率激光器及双极晶体管可靠性研究
短句来源
     Study on Planar Resonant Tunneling Diode and Resonant Tunneling Transistor and Their Applications
     平面型共振隧穿二极管与共振隧穿晶体管的研究与应用
短句来源
     FREQUENCY STABILITY OF TRANSISTOR FEEDBACK OSCILLATORS
     晶体管反馈振荡器的频率稳定
短句来源
     A TRANSISTOR SAMPLING OSCILLOSCOPE WITH A BANDWIDTH GREATER THAN 1000 Me
     频宽1000兆赫的晶体管取样示波器
短句来源
更多       
  transistors
     A Comparison of Direct Current Characteristics betweennSi/pSi_(0.8)Ge_(0.2)/nSi andnSi/pSi/nSi Transistors
     nSi/pSi_(0.8)Ge_(0.2)/nSi与nSi/pSi/nSi晶体管直流特性的比较
短句来源
     1.44~1.68 GHz 220 W Silicon Microwave Pulsed Power Transistors
     1.44~1.68GHz 220W硅微波脉冲功率晶体管
短句来源
     The measurements on the transistors: h_(fe)=100, V_(CE)=3~V,f_T=10GHz were obtained.
     测量结果表明,晶体管的h_(fe)=100,V_(CE)=3~4V,f_T=10GHz。
短句来源
     Application of RESURF Principle to SOI LDMOS Transistors
     RESURF原理应用于SOI LDMOS晶体管
短句来源
     Comparative Analysis of the High-Frequency Performance of Si/Si_(1-x)Ge_x Heterojunction Bipolar and Si Bipolar Transistors
     Si/Si_(1-x)Ge_x异质结双极晶体管和Si双极晶体管高频性能的比较分析
短句来源
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  bipolar transistors
     Comparative Analysis of the High-Frequency Performance of Si/Si_(1-x)Ge_x Heterojunction Bipolar and Si Bipolar Transistors
     Si/Si_(1-x)Ge_x异质结双极晶体管和Si双极晶体管高频性能的比较分析
短句来源
     The heterojunction bipolar transistors(HBTs)with In0.03Ga0.97As0.99N0.01 on GaAsand GaAs0.51Sb0.49 on InP are introduced.
     介绍了以In0.03Ga0.97As0.99N0.01材料为基区的GaAs异质结双极型晶体管和 以GaAs0.51Sb0.49材料为基区的InP HBT。
短句来源
     DC~3 Gb/s LD/EA Drivers Using Discrete Double Polysilicon Bipolar Transistors
     复合多晶硅双极晶体管DC~3Gb/sLD/EA驱动器
短句来源
     By adopting poly-Si(n~+)/UTSiO_2/n~+-Si/P-Si junction emitter and controlling the fabricating process, the long-term stable silicon bipolar transistors with parameters nearly the same as conventional transistors, and the h_(FE)temperature coefficient less than 20% in the range from -55℃ to 100℃ have been fabricated and measured.
     采用poly-Si(n~+)/UTSiO_2/n~+-Si/P-Si发射结结构,研制出参数与常规晶体管相近、能长期稳定工作、在-55~100℃温度范围内,h_(FE)温度系数小于20%的硅晶体管
短句来源
     1/f Noise as a Prediction for h_(FE) Instability of Bipolar Transistors
     用1/f噪声预测双极晶体管的h_(FE)漂移失效
短句来源
更多       
  a transistor
     This paper introduces a digital thermometer with 0.01℃ precision, whose controller is the computer AT89C51 ,whose A/D converter is made of the integrated circuit ICL7135 and whose temperature sensor is made of a transistor tube.
     本文用晶体管PN结作温度传感器,用集成电路ICL7135等作A/D转换器,以AT89C51为控制器,制作了测量精度可达0.01℃的数字温度计。
短句来源
     200V-60A TRANSISTOR CHOPPER USED IN MAGNETIC SUSPENSION SYSTEMS
     应用于磁悬挂系统的200V─6OA晶体管斩波器
短句来源
     The optical effect on the I-Vcurve of the diode is very similar to that of a transistor,and the optically controlledcurrent efficiency is 300μA/mW.
     光控I-V曲线类似晶体管特性,光控电流能力为300μA/mW。
短句来源
     A laser charging power supply and its control circuit consisting of a piece of IC, a transistor and a transformer are described,This power supply can achieve charging 10 times per second, and provide 5V power for range counter.
     本文简述了用一块集成电路、一只晶体管、一个变压器,组成每分钟10次的激光电源充电电路及控制电路、距离计数器5V电源的原理。
短句来源
     In this paper, we discuss the various factors affecting the Ic-V_(BE) characteristics of a transistor in the low injection level, i.e. the factors to change n ≡ d(V_(BE)/V_T)/dlnIc to departe from 1. It is described also an accurate differential method of measuring n for integrated transistor-pair.
     本文讨论了影响小注入下晶体管的l_C-V_(BE)特性的各种因素。 作者发现发射结势垒区准费米能级降落的影响对于解释实验中发现的n~*≡d(V_(BE)/V_T)/d In l_C<1的情况是重要的。
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  transistor
This is our first report on the high performance 1 mm AlGaN/GaN high electron mobility transistor (HEMT) which was developed using home-made AlGaN/GaN epitaxy structures based on SiC substrate.
      
The design and fabrication on gate type resonant tunneling transistor
      
In light of fabricating resonant tunneling diode (RTD), in this paper a GaAs-based resonant tunneling transistor with gate structure (GRTT) has been designed and fabricated successfully.
      
The electrokinetic behavior of silicon plates covered with an oxide film is compared to the electrode behavior of a similar board of an ion-selective field-effect transistor.
      
The meter consists of a semiconductor magnetic-field sensitive double-collector transistor (magnetotransistor) with ferromagnetic concentrators of the magnetic field, differential amplifier, and digital voltmeter.
      
更多          
  transistors
Progresses in organic field-effect transistors and molecular electronics
      
In the past years, organic semiconductors have been extensively investigated as electronic materials for organic field-effect transistors (OFETs).
      
In this review, we briefly summarize the current status of organic field-effect transistors including materials design, device physics, molecular electronics and the applications of carbon nanotubes in molecular electronics.
      
The pulse shaper triggering the light-emitting diode is based on avalanche transistors.
      
Effect of Hot Carriers and Ionizing Radiation on the Spectrum of Interface States in MOS Transistors
      
更多          
  bipolar transistors
The base of this structure is undoped unlike in conventional bipolar transistors.
      
Lateral Injection Utilized for Improving the Performance of Microwave Bipolar Transistors
      
New approach to the manufacturing of power microwave bipolar transistors: A computer simulation
      
Recombination in the space charge region and its effect on the transmittance of bipolar transistors
      
AbstractThe effect of recombination in the space charge region of the emitter junction on the transmittance of bipolar transistors is considered.
      
更多          
  a transistor
A High-Voltage Reverse Switch-on Dynistor Switch with a Transistor Control Circuit
      
A Transistor-Based Modulator for a Microwave Magnetron
      
An analysis showed that correct evaluation of the density of surface states and the gate insulator charging by method of subthreshold current-voltage characteristics requires taking into account the planar inhomogeneity of a transistor.
      
The characteristics of a transistor oscillator of a set of frequencies stabilized with a frequency-tuned multifrequency resonator based on higher-order bulk acoustic modes are investigated.
      
A thermal conductivity detector is reported, which is not - as is usual - operated with a hot wire or thermistor, but with a transistor.
      
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