By adopting poly-Si(n~+)/UTSiO_2/n~+-Si/P-Si junction emitter and controlling the fabricating process, the long-term stable silicon bipolar transistors with parameters nearly the same as conventional transistors, and the h_(FE)temperature coefficient less than 20% in the range from -55℃ to 100℃ have been fabricated and measured.
This paper introduces a digital thermometer with 0.01℃ precision, whose controller is the computer AT89C51 ,whose A/D converter is made of the integrated circuit ICL7135 and whose temperature sensor is made of a transistor tube.
A laser charging power supply and its control circuit consisting of a piece of IC, a transistor and a transformer are described,This power supply can achieve charging 10 times per second, and provide 5V power for range counter.
In this paper, we discuss the various factors affecting the Ic-V_(BE) characteristics of a transistor in the low injection level, i.e. the factors to change n ≡ d(V_(BE)/V_T)/dlnIc to departe from 1. It is described also an accurate differential method of measuring n for integrated transistor-pair.
本文讨论了影响小注入下晶体管的l_C-V_(BE)特性的各种因素。 作者发现发射结势垒区准费米能级降落的影响对于解释实验中发现的n~*≡d(V_(BE)/V_T)/d In l_C<1的情况是重要的。
This is our first report on the high performance 1 mm AlGaN/GaN high electron mobility transistor (HEMT) which was developed using home-made AlGaN/GaN epitaxy structures based on SiC substrate.
The design and fabrication on gate type resonant tunneling transistor
In light of fabricating resonant tunneling diode (RTD), in this paper a GaAs-based resonant tunneling transistor with gate structure (GRTT) has been designed and fabricated successfully.
The electrokinetic behavior of silicon plates covered with an oxide film is compared to the electrode behavior of a similar board of an ion-selective field-effect transistor.
The meter consists of a semiconductor magnetic-field sensitive double-collector transistor (magnetotransistor) with ferromagnetic concentrators of the magnetic field, differential amplifier, and digital voltmeter.
Progresses in organic field-effect transistors and molecular electronics
In the past years, organic semiconductors have been extensively investigated as electronic materials for organic field-effect transistors (OFETs).
In this review, we briefly summarize the current status of organic field-effect transistors including materials design, device physics, molecular electronics and the applications of carbon nanotubes in molecular electronics.
The pulse shaper triggering the light-emitting diode is based on avalanche transistors.
Effect of Hot Carriers and Ionizing Radiation on the Spectrum of Interface States in MOS Transistors
A High-Voltage Reverse Switch-on Dynistor Switch with a Transistor Control Circuit
A Transistor-Based Modulator for a Microwave Magnetron
An analysis showed that correct evaluation of the density of surface states and the gate insulator charging by method of subthreshold current-voltage characteristics requires taking into account the planar inhomogeneity of a transistor.
The characteristics of a transistor oscillator of a set of frequencies stabilized with a frequency-tuned multifrequency resonator based on higher-order bulk acoustic modes are investigated.
A thermal conductivity detector is reported, which is not - as is usual - operated with a hot wire or thermistor, but with a transistor.