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晶体管
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  transistor
    The Research about the Noise for the Reliability of High Power Semiconductor Laser and Bipolar Transistor
    噪声用于半导体大功率激光器及双极晶体管可靠性研究
短句来源
    An Experimental Study of Avalanche Transistor Oscillatory Circuits
    雪崩晶体管振荡电路的实验研究
短句来源
    THE DESIGN OF POWER TRANSISTOR EMITTER
    功率晶体管的发射极设计
短句来源
    INVESTIGATION ON THE EXPONENTIAL FACTOR OF I_c-V_(BE) CHARACTERISTICS OF TRANSISTOR AT LOW INJECTION LEVEL
    小注入下晶体管I_c-V_(BE)特性的指数因子的研究
短句来源
    The Design and Application of the Avalanche Transistor High Speed Pulse Circuit
    雪崩晶体管高速脉冲电路设计及其应用
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  “晶体管”译为未确定词的双语例句
    The Study of a-Si:H/a-SiN_x Interface of TFT
    薄膜晶体管a-Si:H/a-SiN_x界面研究
短句来源
    Design of Construct Parameters of High Image Quality a-Si TFT LCD
    高像质非晶硅薄膜晶体管结构参数的设计
短句来源
    tunnelable thin SiO_2 films can be grown as well as Si_3N_4 films with charge storage characteristic is deposited by SiH_4-NH_3 system LPCVD technology.
    的可隧穿的超薄SiO_2膜,以及用SiH_4—NH_3体系的LPCVD技术淀积具有电荷存储特性的Si_3N_4膜,从而制作出MNOS结构的可变阈值晶体管
短句来源
    The main output pulses of the developed generator have amplitudes as high as 200 V(into a 50 Ω load), peak currents up to 4 A, a rise time of about 2ns, pulse widths in therange of 5 to 100 ns, and a jitter of less than 50 ps.
    为了获得高速大电流主脉冲输出,采用了同时触发的双雪崩晶体管串联组合电路. 所研制的发生器的主脉冲输出,其电压幅度高达200V(在50Ω负载)、峰值电流为4A、上升时间约2ns、宽度5-100ns、晃动小于50ps.
短句来源
    TRANSISTOR-LIKE THREE-TERMINAL SUPERCONDUCTING DEVICES
    晶体管型三端超导器件
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  transistor
This is our first report on the high performance 1 mm AlGaN/GaN high electron mobility transistor (HEMT) which was developed using home-made AlGaN/GaN epitaxy structures based on SiC substrate.
      
The design and fabrication on gate type resonant tunneling transistor
      
In light of fabricating resonant tunneling diode (RTD), in this paper a GaAs-based resonant tunneling transistor with gate structure (GRTT) has been designed and fabricated successfully.
      
The electrokinetic behavior of silicon plates covered with an oxide film is compared to the electrode behavior of a similar board of an ion-selective field-effect transistor.
      
The meter consists of a semiconductor magnetic-field sensitive double-collector transistor (magnetotransistor) with ferromagnetic concentrators of the magnetic field, differential amplifier, and digital voltmeter.
      
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In this paper the relationships between small-signal h-parameters and elements of the natural equivalent circuit of the common emitter configuration of junction transistors are studied. From experimental results of h-parameters of two typieal alloyed PNP transistors (one 2N104 and one п-6 transistor) the relationship of h-parameters and elements of natural equivalent circuit vs operating frequency and d. c. operating condition (d.c. emitter current and d.e. collector voltage) are evaluated. Results thus obtained...

In this paper the relationships between small-signal h-parameters and elements of the natural equivalent circuit of the common emitter configuration of junction transistors are studied. From experimental results of h-parameters of two typieal alloyed PNP transistors (one 2N104 and one п-6 transistor) the relationship of h-parameters and elements of natural equivalent circuit vs operating frequency and d. c. operating condition (d.c. emitter current and d.e. collector voltage) are evaluated. Results thus obtained ace then compared with results obtained from analysis based on calculations using physical constants of the transistor. The explanation of the behavior of the reverse open-circuit voltage amplification factor, μb0, of the common emitter circuit is given in detail. Characteristics of μbo and properties of h22 (the output admittance with input open) are correlated. This paper gives complete information about h-parameters and natural equivalent circuit of two transistors, serving as an important reference for both device men and research workers on transistor circuits.

本文研究面结合型晶体管共发射极线路的小讯号h参数与自然等效线路中元件的关系。根据两种合金管(2N104及Ⅱ-6晶体管)h参数的实验结果求出h参数与自然等效线路元件随频率及随直流运用状态(直流发射极电流及直流集电极电压)的相互关系。对实验结果与根据晶体管物理构造分析计算的结果进行了比较。对开路反向电压放大系数μ_(bc)的现象给予详细分析,并求出μ_(bc)与开路输出导纳h_(22)的相互关系。两套晶体管的h参数及自然等效线路的完整资料可供晶体管器件设计及线路研究者的使用。

The effect of circuit parameters of avalanche transistor sweep gener-ators on the sawtooth waveforms is discussed. To improve the sweep linearity, the bootstrap circuit is applied. It is shown that the calculated results are in agreement with experimental data. The avalanche trausistor sine wave oscillators are also studied. Experimental results show that a certain performance of oscillators operated in avalanche mode is found to be letter than that of oscillators operated in normal mode.

本文讨论了雪崩晶体营扫描发生器的电路参数对锯齿波形的影响。采用自举电路来提高扫描线性度。实验结果与计算相符合。文中还研究了雪崩晶体管正弦振荡器,实验结果表明,工作在雪崩型式的某些振荡性能要比在正常型式的好。

In the design of an emitter of power transistors, the main problem is to attain good current amplification factor β for a given injection level. At a higher injection level, the current amplification factor drops off as the emitter current density is increased. One of the commonly used methods to reduce this fall-off is by increasing the emitter area. On account of the socalled "base region self-crowding effect", this would make the emitter current density not uniform over the emitter junction area, the current...

In the design of an emitter of power transistors, the main problem is to attain good current amplification factor β for a given injection level. At a higher injection level, the current amplification factor drops off as the emitter current density is increased. One of the commonly used methods to reduce this fall-off is by increasing the emitter area. On account of the socalled "base region self-crowding effect", this would make the emitter current density not uniform over the emitter junction area, the current density dropping off rapidly at regions far from the base contact. In this paper, this effect is analyzed quantitatively for nearly all injection levels both for circular and comb structures of the junction. An "exponential decay" for the emitter current density distribution, and an effective emitter area are obtained. These results may give some reference for the design of power transistors.

本文讨论功率晶体管设计中设计发射极时所需考虑的两个问题。一个是在给定的注入条件下如何保证足够大的电流放大;另一个是如何提高发射极发射电流的有效面积。文中着重分析在各种注入条件下发射结面上发射极电流密度的分布,亦即所谓基区电阻自偏压截止效应,最后给出主要结论。

 
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