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晶体管    
相关语句
  transistor
    This Article Mainly Introduced the manufacturing process and structure of VD-MOS transistor, and compared the charateristic of VDMOS transistor to bipolar transistor's. It indicated the advantages of the VDMOS transistor as a switching element in the electricballast, and described the concrete use condition of VDMOS transistor in electric ballast.
    本文主要介绍VDMOS管的制造工艺与结构,并将VDMOS管的特性与双极晶体管作比较,突出了VDMOS管在电子镇流器中作为开关管的优势,对VD-MOS管在电子镇流器中的具体使用条件作了说明。
短句来源
  transistor
    This Article Mainly Introduced the manufacturing process and structure of VD-MOS transistor, and compared the charateristic of VDMOS transistor to bipolar transistor's. It indicated the advantages of the VDMOS transistor as a switching element in the electricballast, and described the concrete use condition of VDMOS transistor in electric ballast.
    本文主要介绍VDMOS管的制造工艺与结构,并将VDMOS管的特性与双极晶体管作比较,突出了VDMOS管在电子镇流器中作为开关管的优势,对VD-MOS管在电子镇流器中的具体使用条件作了说明。
短句来源
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  transistor
This is our first report on the high performance 1 mm AlGaN/GaN high electron mobility transistor (HEMT) which was developed using home-made AlGaN/GaN epitaxy structures based on SiC substrate.
      
The design and fabrication on gate type resonant tunneling transistor
      
In light of fabricating resonant tunneling diode (RTD), in this paper a GaAs-based resonant tunneling transistor with gate structure (GRTT) has been designed and fabricated successfully.
      
The electrokinetic behavior of silicon plates covered with an oxide film is compared to the electrode behavior of a similar board of an ion-selective field-effect transistor.
      
The meter consists of a semiconductor magnetic-field sensitive double-collector transistor (magnetotransistor) with ferromagnetic concentrators of the magnetic field, differential amplifier, and digital voltmeter.
      
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  transistors
Progresses in organic field-effect transistors and molecular electronics
      
In the past years, organic semiconductors have been extensively investigated as electronic materials for organic field-effect transistors (OFETs).
      
In this review, we briefly summarize the current status of organic field-effect transistors including materials design, device physics, molecular electronics and the applications of carbon nanotubes in molecular electronics.
      
The pulse shaper triggering the light-emitting diode is based on avalanche transistors.
      
Effect of Hot Carriers and Ionizing Radiation on the Spectrum of Interface States in MOS Transistors
      
更多          
  transistor
This is our first report on the high performance 1 mm AlGaN/GaN high electron mobility transistor (HEMT) which was developed using home-made AlGaN/GaN epitaxy structures based on SiC substrate.
      
The design and fabrication on gate type resonant tunneling transistor
      
In light of fabricating resonant tunneling diode (RTD), in this paper a GaAs-based resonant tunneling transistor with gate structure (GRTT) has been designed and fabricated successfully.
      
The electrokinetic behavior of silicon plates covered with an oxide film is compared to the electrode behavior of a similar board of an ion-selective field-effect transistor.
      
The meter consists of a semiconductor magnetic-field sensitive double-collector transistor (magnetotransistor) with ferromagnetic concentrators of the magnetic field, differential amplifier, and digital voltmeter.
      
更多          
  the transistor
The output of this thermistor bridge is connected to the transistor gate through a circuit specifying the operating frequency.
      
Physical processes occurring upon turning-on of the transistor in a converter stage with a saturable-core choke, placed in the clamping diode's circuit, are analyzed.
      
The period of the diode's charge removal and the energy lost in the transistor in various turn-on modes are determined.
      
It is based on the numerical solution to Poisson's equation and makes it possible to calculate a potential distribution and currentvoltage characteristics (CVCs) of the transistor in dependence of its design, process, and electrophysical parameters.
      
A periodic decrease in the electron temperature in the low-resistivity regions of the channel is thought of to improve the mobility and effective transit speed of electrons in the transistor channel.
      
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  其他


This Article Mainly Introduced the manufacturing process and structure of VD-MOS transistor, and compared the charateristic of VDMOS transistor to bipolar transistor's.It indicated the advantages of the VDMOS transistor as a switching element in the electricballast, and described the concrete use condition of VDMOS transistor in electric ballast.

本文主要介绍VDMOS管的制造工艺与结构,并将VDMOS管的特性与双极晶体管作比较,突出了VDMOS管在电子镇流器中作为开关管的优势,对VD-MOS管在电子镇流器中的具体使用条件作了说明。

 
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