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  transistor
This is our first report on the high performance 1 mm AlGaN/GaN high electron mobility transistor (HEMT) which was developed using home-made AlGaN/GaN epitaxy structures based on SiC substrate.
      
The design and fabrication on gate type resonant tunneling transistor
      
In light of fabricating resonant tunneling diode (RTD), in this paper a GaAs-based resonant tunneling transistor with gate structure (GRTT) has been designed and fabricated successfully.
      
The electrokinetic behavior of silicon plates covered with an oxide film is compared to the electrode behavior of a similar board of an ion-selective field-effect transistor.
      
The meter consists of a semiconductor magnetic-field sensitive double-collector transistor (magnetotransistor) with ferromagnetic concentrators of the magnetic field, differential amplifier, and digital voltmeter.
      
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  transistors
Progresses in organic field-effect transistors and molecular electronics
      
In the past years, organic semiconductors have been extensively investigated as electronic materials for organic field-effect transistors (OFETs).
      
In this review, we briefly summarize the current status of organic field-effect transistors including materials design, device physics, molecular electronics and the applications of carbon nanotubes in molecular electronics.
      
The pulse shaper triggering the light-emitting diode is based on avalanche transistors.
      
Effect of Hot Carriers and Ionizing Radiation on the Spectrum of Interface States in MOS Transistors
      
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  transistor
This is our first report on the high performance 1 mm AlGaN/GaN high electron mobility transistor (HEMT) which was developed using home-made AlGaN/GaN epitaxy structures based on SiC substrate.
      
The design and fabrication on gate type resonant tunneling transistor
      
In light of fabricating resonant tunneling diode (RTD), in this paper a GaAs-based resonant tunneling transistor with gate structure (GRTT) has been designed and fabricated successfully.
      
The electrokinetic behavior of silicon plates covered with an oxide film is compared to the electrode behavior of a similar board of an ion-selective field-effect transistor.
      
The meter consists of a semiconductor magnetic-field sensitive double-collector transistor (magnetotransistor) with ferromagnetic concentrators of the magnetic field, differential amplifier, and digital voltmeter.
      
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  the transistor
The output of this thermistor bridge is connected to the transistor gate through a circuit specifying the operating frequency.
      
Physical processes occurring upon turning-on of the transistor in a converter stage with a saturable-core choke, placed in the clamping diode's circuit, are analyzed.
      
The period of the diode's charge removal and the energy lost in the transistor in various turn-on modes are determined.
      
It is based on the numerical solution to Poisson's equation and makes it possible to calculate a potential distribution and currentvoltage characteristics (CVCs) of the transistor in dependence of its design, process, and electrophysical parameters.
      
A periodic decrease in the electron temperature in the low-resistivity regions of the channel is thought of to improve the mobility and effective transit speed of electrons in the transistor channel.
      
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  其他


This paper introduces Shockley's life and his achievement in physics. It emphasizes on his transistor theory and the impact of the transistor which is based on his theory. It is believed that the transistor theory of Shockley lays the foundation for the development of today's semiconductor science and technology.

文章介绍了肖克莱的生平事迹及其在物理学上取得的成就 ,着重论述了他提出的晶体管理论以及据此发明的晶体管对后世的影响 ,指出肖克莱提出的晶体管理论奠定了今天半导体科学技术发展的基础 .

Kilby,one of the most outstanding inventor in the 20th century,is the “father of chipps”. But it was a pity that his achievment in this field was not accepted till to the end of ceatury.That was a case of late Nobel prize.

杰克·基尔比是 2 0世纪最杰出的发明家之一 ,是名副其实的“芯片之父”。他发明的集成电路直接决定着晶体管的命运和信息革命的成败 ,甚至至今还在改变着我们的时代、我们的生活方式和生产方式。遗憾的是长期以来 ,他既没有分享到晶体管发明者所获得的那么高的殊荣 ,也没有成为该项专利的所有人。四十二年之后 ,历史终于以最合适的方式给这位发明家以满意的补偿。这是一个迟到多年的诺贝尔奖 ,是科技史上又一起延迟承认的典型案例

 
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