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晶体管
相关语句
  transistor
    High Speed Switch Based on Multiple β Transistor and Its Applications
    基于多β晶体管的高速开关及其应用
短句来源
    Design of Low Voltage Four quadrant Analogue Multiplier Using Neuron MOS Transistor
    采用神经MOS晶体管的低压四象限模拟乘法器的设计
短句来源
    "Application of the Transistor Charge Control Model to Predict RTL and DTL Transient Response"
    应用晶体管电荷控制模型预示电阻-晶体管逻辑和二极管-三极管逻辑电路的瞬态响应
短句来源
    Information Revolution Begins With the Invention of Transistor and Elctronic Computor
    晶体管、电子计算机的发明产生了信息革命
短句来源
    A new method of circuit reduction based on logic state of transistor
    一种基于晶体管逻辑状态的电路简化方法
短句来源
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  transistors
    High--Speed Adders and Comparators Using Transistors and Tunnel Diodes
    采用晶体管和隧道二极管的高速加法器和比较器
短句来源
    Grown--Film Silicon Transistors on Sapphire
    蓝宝石上生长的薄膜硅晶体管
短句来源
    Charge Model of Fast Transistors and the Measurement of Charge Paramenters by High Resolution Electronic Integrator
    快速晶体管电荷模型及用高解析度电子积分器对电荷参数的测量(上)
短句来源
    Come the age of huge scale chip, the research on computer architecture faces new tasks: How to use numerous transistors?
    在巨大规模芯片时代来临的时候,体系结构的研究又遇到了新的课题:如何有效利用数目众多的晶体管?
短句来源
    As silicon technology has crossed the deep-submicron threshold,we can design tens of millions of transistors on a single chip.
    集成电路制造工艺已经通过了深亚微米极限,使得IC设计者可以在单个芯片上集成上千万个晶体管,集成电路进入了片上系统(SOC)王国。
短句来源
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  “晶体管”译为未确定词的双语例句
    Threshold Voltage of Flotox MOSFET in EEPROM
    EEPROM中浮栅MOS晶体管阈值电压的研究
短句来源
    The LongTeng D1 DSP soft core can operate at 150MHz under TSMC 0.25um CMOS technology.
    龙腾D1处理器软核映射到TSMC 0.25μm CMOS工艺下,主频超过150MHz,性能达到150M MAC,集成度为32万晶体管
短句来源
    2.Investigated the process of CMOS/SQl devices.
    2.对CMOS/SOI晶体管的工艺进行了研究。
短句来源
    X microprocessor is a high performance general-purpose processor. It is a full-custom design in 0.18 microm CMOS technology.
    X微处理器是一款高性能通用微处理器,采用0.18微米CMOS工艺全定制设计,规模达450万晶体管
短句来源
    The 32k-transistor microprocessor consumes 180mA running at 500KHz, 5V. The power level is 30% of the synchronous counterpart.
    32,000个晶体管的微处理器在500kHz,5V的条件下消耗电流180mA,功耗是同步微处理器的30%。
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  transistor
This is our first report on the high performance 1 mm AlGaN/GaN high electron mobility transistor (HEMT) which was developed using home-made AlGaN/GaN epitaxy structures based on SiC substrate.
      
The design and fabrication on gate type resonant tunneling transistor
      
In light of fabricating resonant tunneling diode (RTD), in this paper a GaAs-based resonant tunneling transistor with gate structure (GRTT) has been designed and fabricated successfully.
      
The electrokinetic behavior of silicon plates covered with an oxide film is compared to the electrode behavior of a similar board of an ion-selective field-effect transistor.
      
The meter consists of a semiconductor magnetic-field sensitive double-collector transistor (magnetotransistor) with ferromagnetic concentrators of the magnetic field, differential amplifier, and digital voltmeter.
      
更多          
  transistors
Progresses in organic field-effect transistors and molecular electronics
      
In the past years, organic semiconductors have been extensively investigated as electronic materials for organic field-effect transistors (OFETs).
      
In this review, we briefly summarize the current status of organic field-effect transistors including materials design, device physics, molecular electronics and the applications of carbon nanotubes in molecular electronics.
      
The pulse shaper triggering the light-emitting diode is based on avalanche transistors.
      
Effect of Hot Carriers and Ionizing Radiation on the Spectrum of Interface States in MOS Transistors
      
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On the basis of studying and analyzing the structure feature and technical per-formance of intelligent power module, matters that should be taken notice in design and use of these parts are pointed out, and examples of application with the intelligent power module in UPS (uninterrupted power supply)are illus-trated. The result indicates that the degree of automation and running reliabil-ity are greatly raised after using these parts and the original drawback that some discrete components such as GTR (galvanic...

On the basis of studying and analyzing the structure feature and technical per-formance of intelligent power module, matters that should be taken notice in design and use of these parts are pointed out, and examples of application with the intelligent power module in UPS (uninterrupted power supply)are illus-trated. The result indicates that the degree of automation and running reliabil-ity are greatly raised after using these parts and the original drawback that some discrete components such as GTR (galvanic transistor), GTO (Gate turn off) and VDMOS(vertical double divergence MOSFET)were easily damaged is effectively overcome.

在分析研究智能型功率模块的结构特点、技术性能的基础上,提出了该模块在设计使用中应注意的问题。给出了该模块在UPS(不间断电源)中的应用实例。结果表明,智能型功率模块的使用,大大提高了设备的自动化程度和工作可靠性,有效地克服了GTR(功率晶体管)、GTO(门极可关断晶闸管)、VDMOS(垂直双扩散场效应管)等分立器件在UPS中易损坏问题。

This device is composed of large power transistor modules and large scale integrated cnips HEF-4752 and controlled by a single chip computer. The PWM speed adjusting device making up the asychromotor simplifies the structure of the system and advances its dependability

本装置采用大功率晶体管模块与大规模集成芯片HEF—4752并用单片机控制,组成异步机的PWM调速系统,简化了系统的结构,提高了系统的可靠性。

Based on the fact that multiple β transistor is easy to realize multi-valued AND,OR operations, this paper analyses the demand for the switches in multi-valued threshold gates. The high speed ternary threshold gates composed by multiple β transistor are particularly designed. By comput er simulation with PSPICE (4. 02), it is shown that the designed circuits have correct logic functions and ideal transient characteristic. Thus the high speed multi-valued logic circuits can be designed with them and the linear...

Based on the fact that multiple β transistor is easy to realize multi-valued AND,OR operations, this paper analyses the demand for the switches in multi-valued threshold gates. The high speed ternary threshold gates composed by multiple β transistor are particularly designed. By comput er simulation with PSPICE (4. 02), it is shown that the designed circuits have correct logic functions and ideal transient characteristic. Thus the high speed multi-valued logic circuits can be designed with them and the linear AND-OR gate.

本文在多β晶体管容易实现多值与、或运算的事实的基础上,进一步分析了多值阈值门中的开关要求,并具体设计了基于多β晶体管的高速三值阈值门.应用PSPICE(V4.02)程序的计算机模拟表明所设计的电路具有正确的逻辑功能与理想的瞬态特性,它们能与线性与或门一起组成高速的多值逻辑电路.

 
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