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红光led
相关语句
  red led
     The AlGaInP/GaInP multiple quantum wells red LED wafers were grown by EMCORE GS/3200 LP-MOCVD.
     采用LP-MOCVD技术在n-GaAs衬底上生长了AlGaInP/GaInP多量子阱红光LED外延片.
短句来源
     The AlGaInP/GaInP multiple quantum wells red LED wafers were grown by EMCORE GS/3200 LP-MOCVD. Properties of these wafers were investigated by ECV and photoluminescence measurements.
     采用LP MOCVD技术在n GaAs衬底上生长了AlGaInP/GaInP多量子阱红光LED外延片。
短句来源
     GaN-based blue LED chips were used as exciting light source,high-power white LEDs with different correlative color temperature (T_c) and rendering index (R_a) were fabricated through phosphor conversion and red LED compensation.
     用GaN基大功率蓝光LED芯片作为激发光源,分别用荧光粉转换法和红光LED补偿法制备了不同相关色温及显色指数的白光LED。
短句来源
     Adopting blue LED chip to excite yellow phosphor,at the same time red LED chips are used to compensate red light in emission spectrum,white LEDs with low T_c and high R_a would be obtained by adjusting the work current of blue and red LED chips and the dosage of phosphor.
     采用蓝光LED芯片激发黄色荧光粉,同时用红光LED进行补偿,通过调整蓝光和红光LED芯片的工作电流以及荧光粉的用量,可获得低色温和高显色性白光LED,而且整体发光效率较高。
短句来源
  “红光led”译为未确定词的双语例句
     An Al_ 0.6 Ga_ 0.4 As/AlAs distributed Bragg reflector (DBR) for a 630nm peak wavelength high brightness AlGaInP LED is studied. The reflective characteristics of normal DBR and coupled DBR are simulated using the interference matrix model. The simulated DBR structures and corresponding LEDs are grown by LP-MOCVD.
     采用光学薄膜理论中干涉矩阵模型计算了峰值波长为630nm的AlGaInP红光LED的Al0·6Ga0·4As/AlAs材料的常规DBR和复合DBR的反射谱特性,用LP-MOCVD方法生长了模拟设计的DBR结构,测量了其白光反射谱,实验与模拟结果基本符合.
短句来源
     The simulated and experimental results both indicate that the coupled DBR can remarkably increase the light extraction efficiency of an AlGaInP LED. The non-encapsulated LED with the coupled DBR performs well,with 2.3mW output optical power,12 lm/W luminous efficiency,and 5.6% external quantum efficiency,with an improvement of 35% over that with a normal DBR.
     制备了采用Al0·6Ga0·4As/AlAs复合DBR的LED器件,未封装输出光功率为2·3mW,外量子效率为5·6%,发光效率可达12lm/W,比常规DBR器件提高了35%. 验证了复合DBR与常规DBR相比,可以大幅度提高AlGaInP红光LED的出光效率.
短句来源
  相似匹配句对
     LED Operation
     LED应用
短句来源
     DIGITAL DISPLAY OF LED AND CONTROL CIRCUIT
     LED数字显示和控制电路
短句来源
     The bizarre red light in the area of Bermudan
     百慕大奇异的红光
短句来源
     On Postmortem by Red Light
     关于红光验尸
短句来源
     Based on the bleaching of different wavelengths of quartz and feldspar, R-LED1 ( 661 15 nm ) was selected from three types of red LED ( R-LED1, R-LED2 and R-LED3 ) for its waveband and lighting intensity.
     通过对比,选择了典型的红光固体二极管R LED1(661±15)nm作为研究对象。
短句来源
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  red led
This arrangement consists of a flow cell built within a high-intensity red LED (λmax?=?630?nm).
      
Cavity-enhanced absorption spectroscopy with a red LED source for NOx trace analysis
      
The ERGs elicited by the red LED lacked the second peak.
      
Leaf length was greater with the plants grown under red LED.
      
It was found that blue plus red LEDs improved flower induction in cyclamen, the number flower buds and open flowers being highest in the plants grown under blue plus red LED (10 h per day).
      
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The notion that π

采用Suzuki方法合成了9,9-二辛基芴与萘并硒二唑的两种无规共聚物并研究了其紫外光谱、光致发光和电致发光性能。两种聚合物的电致发光波长为650~666nm,均为发饱和红光的LED材料,其电致发光外量子效率最高达到了1.05%。随着共聚物中萘并硒二唑含量的增加,共聚物的光致发光和电致发光的发射波长均有少量红移。证明了根据共轭高聚物链内能量转移原理,在聚芴链中引入不同含量的窄带隙杂环单元可实现对聚芴发光颜色的调节。

The AlGaInP/GaInP multiple quantum wells red LED wafers were grown by EMCORE GS/3200 LP-MOCVD. The influences of thermal annealing to the characteristics of p-GaP and p-AlGaInP layer were studied. Compared with the grown sample, the hole carrier concentration of GaP layer in LED wafer increased from 5.6×10~(18) cm~(-3) to 6.5×10~(18) cm~(-3), and the hole carrier concentration of AlGaInP layer increased from 6.0×10~(17) cm~(-3) to 1.1×10~(18) cm~(-3), when wafer was annealed under 460 ℃ for 15 minutes.

采用LP-MOCVD技术在n-GaAs衬底上生长了AlGaInP/GaInP多量子阱红光LED外延片.相关研究表明退火对p型GaP和p型AlGaInP载流子浓度有重要影响.与未退火样品相比,460℃退火15min,外延片p型GaP层的空穴浓度由5 6×1018cm-3增大到6 5×1018cm-3,p型AlGaInP层的空穴浓度由6 0×1017cm-3增大到1 1×1018cm-3.这可能是由于退火破坏了Mg-H复合体,恢复了Mg受主的活性导致的.

The Si-doping AlGaInP/GaInP multiple quantum wells red LED wafers were grown by EMCORE GS/3200 low pressure metalorganic chemical vapor deposition (MOCVD). Properties of these wafers were investigated by double crystal X-ray diffraction and photoluminescence measurement. The influence of Si-doping on the characteristics of AlGaInP/GaInP multiple quantum wells was studied. The GaAs substrates used were cut 15 degree off the (100) plane towards the [011] direction. TMGa, TMIn, TMAl, AsH_3, and PH_3 were used...

The Si-doping AlGaInP/GaInP multiple quantum wells red LED wafers were grown by EMCORE GS/3200 low pressure metalorganic chemical vapor deposition (MOCVD). Properties of these wafers were investigated by double crystal X-ray diffraction and photoluminescence measurement. The influence of Si-doping on the characteristics of AlGaInP/GaInP multiple quantum wells was studied. The GaAs substrates used were cut 15 degree off the (100) plane towards the [011] direction. TMGa, TMIn, TMAl, AsH_3, and PH_3 were used as Ga, In, Al, As, P precursors, respectively. CP_2Mg and SiH_4 were used as p and n type doping reagents. The growth temperature was 620~720 ℃. The sequence of layers grown on n-GaAs substrate was, 0.5 μm n-GaAs buffer with the carrier concentration of about 5×10~(17) cm~(-3), 15 periods Al_(0.5)Ga_(0.5)As∶Si/AlAs∶Si DBR, 0.5 μm n-(Al_(0.7)Ga_(0.3))_(0.5)In_(0.5)P cladding layer with carrier concentration of about 3×10~(17) cm~(-3),(Al_(0.3)Ga_(0.7))_(0.5)In_(0.5)P/Ga_(0.5)In_(0.5)P multiple quantum wells, 0.5 μm p-(Al_(0.7)Ga_(0.3))_(0.5)In_(0.5)P cladding layer with carrier concentration of about 6×10~(17)cm~(-3), and 5 μm p-GaP current spreading layer with carrier concentration of about 5×10~(18) cm~(-3). Three AlGaInP LED wafers with different Si doping in 10 periods MQW were studied. The Sample A is unintentional doping 10 periods MQW wafer. The Sample B is Si-doping in the barriers wafer. The Sample C was Si-doping in the barriers and wells wafer. The doping dose was the same as that of the 0.5 μm n-(Al_(0.7)Ga_(0.3))_(0.5)In_(0.5)P cladding layer.The (004) X-ray diffraction curves of these three wafers with different Si doping in 10 periods MQW were obtained. Besides the peaks of GaAs and AlGaInP, two satellite peaks are observed in all samples, which are listed by dashed line. It indicates that the interface quality of MQW does not become worse by Si doping. The periods of Sample A, B and C is 14.6, 15.2, 15.7 nm, respectively. The growth rate of MQW increases with the Si-doping. In PL spectra of these three samples at room temperature, the peak intensity of Sample B is strong as 13 times as that of Sample A, and the peak intensity of Sample C is strong as 28 times as that of Sample A. It indicates that the PL intensity of MQW can be largely enhanced by the Si doping in MQW. Moreover, the peak position and width do not obviously change by Si-doping.

采用LP MOCVD技术在n GaAs衬底上生长了AlGaInP/GaInP多量子阱红光LED外延片。以X射线双晶衍射技术和光致发光技术对外延片进行了表征 ,研究了Si掺杂对AlGaInP/GaInP多量子阱性能的影响。研究表明 :掺Si能大大提高 (Al0 .3 Ga0 .7) 0 .5In0 .5P/Ga0 .5In0 .5P多量子阱的发光强度。相对于未故意掺杂的样品 ,多量子阱垒层掺Si使多量子阱的发光强度提高了 13倍 ,阱层和垒层均掺Si使多量子阱的发光强度提高了 2 8倍。外延片的X射线双晶衍射测试表明 ,Si掺杂并没有使多量子阱的界面质量变差

 
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