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体硅mosfet
相关语句
  bulk mosfet
     Research on sub 0.1μm gate body connected bulk MOSFET
     亚0.1 μm栅衬互连体硅MOSFET特性研究
短句来源
     This method has the same device area and is completely compatible with the bulk MOSFET process.
     这种抑制浮体效应的方法不增加器件面积 ,而且与体硅MOSFET工艺完全兼容 .
短句来源
     Comparisons of the short channel effects for uniform channel doping bulk MOSFET, intrinsic channel doping bulk MOSFET, conventional SOI MOSFET and double gate SOI MOSFET are all conducted using our model, and the results are verified by 2 D numerical simulations.
     均匀掺杂沟道体硅MOSFET、本征掺杂沟道体硅MOS-FET、常规SOIMOSFET和双栅SOIMOSFET的短沟效应数值模拟比较结果与模型结论完全一致。
短句来源
     High current driving capability and low standby power dissipation are now becoming an increasingly important subject in low voltage CMOS transistor design. This paper proposed a Gate body Connected (GBC) operation mode for bulk MOSFET at 0.5V power supply voltage to deal with this issue.
     为满足低电压CMOS晶体管高驱动电流和低静态功耗的要求,提出0.5V栅衬互连GBC(gate-bodyconnected)体硅MOSFET工作模式。
短句来源
  “体硅mosfet”译为未确定词的双语例句
     Comparison of the characteristics of DSOI, SOI and bulk-Si MOSFETs
     DSOI,SOI和体硅MOSFET的特性测量比较
短句来源
     Compact I-V Model for Sub-100nm Bulk Silicon MOSFETs 
     亚100nm体硅MOSFET集约I-V模型
短句来源
     The components,analytical formula and simulation results of leakage currnet for SOI MOSFETs at high temperature are deeply studied on the base of the investigation on the leakage current at high temperature for bulk Si MOSFETs. The results of the comparision between these two kinds 0f MOSFET prove that the leakage current of SOI MOSFETs with thin silicon film at high temperature decreases significantly,SOI MOSFETs might be widely used in the high temperature field in the future.
     在对体硅MOSFET高温泄漏电流研究的基础上,深入研究了SOI材料MOSFET泄漏电流的组成、解析式及高温模拟结果,并与体硅MOSFET进行了比较,证明薄膜SOI材料MOSFET的高温泄漏电流明显减小,因而在高温领域中有着广阔的应用前景。
短句来源
     A physical model of partially depleted SOI MOSFET was proposed. The SOI MOSFET can be regarded as the combination of bulk silicon MOSFET and bipolar transistor. The model is obtained through detailed analysis of operation mechanism of SOI devices.
     提出了部分耗尽SOIMOSFET物理模型,SOIMOSFET可以看作体硅MOSFET和双极晶体管的结合,模型通过详细地分析SOI器件在各工作区域的工作机理得出,并提取出了相应的模型参数。
短句来源
  相似匹配句对
     Comparison of the characteristics of DSOI, SOI and bulk-Si MOSFETs
     DSOI,SOI和MOSFET的特性测量比较
短句来源
     Compact I-V Model for Sub-100nm Bulk Silicon MOSFETs 
     亚100nmMOSFET集约I-V模型
短句来源
     NUMERICAL SIMULATIONS OF ELECTRICAL AND THERMAL DISTRIBUTIONS OF SI, SOI AND DSOI MOSFETS
     、SOI及DSOI MOSFET器件级电、热分析
短句来源
     A Tunneling-Based Accelerometer in Bulk Silicon Processes
     隧道加速度计
短句来源
     Research on sub 0.1μm gate body connected bulk MOSFET
     亚0.1 μm栅衬互连MOSFET特性研究
短句来源
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  bulk mosfet
A 2-D device simulation result of the bulk MOSFET is depicted together.
      
Different ways in which stress can be introduced into the inversion layer in the bulk MOSFET.
      
In the bulk MOSFET, the body is hardly used as an active terminal because of the large body capacitance inherited from well or substrate capacitance.
      
This subcircuit approach can be used to implement the model in any bulk MOSFET compact model.
      
These new devices will likely feature several new materials cleverly incorporated into new non-bulk MOSFET structures.
      


The components,analytical formula and simulation results of leakage currnet for SOI MOSFETs at high temperature are deeply studied on the base of the investigation on the leakage current at high temperature for bulk Si MOSFETs. The results of the comparision between these two kinds 0f MOSFET prove that the leakage current of SOI MOSFETs with thin silicon film at high temperature decreases significantly,SOI MOSFETs might be widely used in the high temperature field in the future.

在对体硅MOSFET高温泄漏电流研究的基础上,深入研究了SOI材料MOSFET泄漏电流的组成、解析式及高温模拟结果,并与体硅MOSFET进行了比较,证明薄膜SOI材料MOSFET的高温泄漏电流明显减小,因而在高温领域中有着广阔的应用前景。

Short channel effects will eventually preclude further MOSFET miniaturization. To solve the Poisson's equation involved in short channel effects analysis, variational method is applied. And the expression of the key parameter called natural gate length scale is obtained, which includes the 2 D effects in gate dielectric, channel depletion layer and buried oxide. It is only related to the difference between the boundary condition and long channel solution, thus has clear physical meaning. Comparisons of the...

Short channel effects will eventually preclude further MOSFET miniaturization. To solve the Poisson's equation involved in short channel effects analysis, variational method is applied. And the expression of the key parameter called natural gate length scale is obtained, which includes the 2 D effects in gate dielectric, channel depletion layer and buried oxide. It is only related to the difference between the boundary condition and long channel solution, thus has clear physical meaning. Comparisons of the short channel effects for uniform channel doping bulk MOSFET, intrinsic channel doping bulk MOSFET, conventional SOI MOSFET and double gate SOI MOSFET are all conducted using our model, and the results are verified by 2 D numerical simulations. So it is confirmed that our model can correctly simulate subtle differences in different structures, and gives a guidance for a new device structure design with suppressed short channel effects.

短沟效应将成为限制MOS器件进一步缩小的主要因素。利用求解Poisson方程的变分方法对短沟效应进行了分析,导出了表征器件短沟效应的自然沟长尺度表达式。同时考虑了栅介质、沟道耗尽层和埋层SiO2中的二维效应,结果只与边界条件与长沟解的差有关,具有清晰的物理意义。均匀掺杂沟道体硅MOSFET、本征掺杂沟道体硅MOS-FET、常规SOIMOSFET和双栅SOIMOSFET的短沟效应数值模拟比较结果与模型结论完全一致。表明模型能对不同器件结构的细致差别正确模拟。研究结果为设计抑制短沟效应的新型器件提供了指导。

High current driving capability and low standby power dissipation are now becoming an increasingly important subject in low voltage CMOS transistor design. This paper proposed a Gate body Connected (GBC) operation mode for bulk MOSFET at 0.5V power supply voltage to deal with this issue. Based on two dimensional device numerical simulations, this work covers the research on device structure design, characteristics and physics in 0.5V GBC bulk MOSFET down to sub 0.1μm gate length. The major results obtained...

High current driving capability and low standby power dissipation are now becoming an increasingly important subject in low voltage CMOS transistor design. This paper proposed a Gate body Connected (GBC) operation mode for bulk MOSFET at 0.5V power supply voltage to deal with this issue. Based on two dimensional device numerical simulations, this work covers the research on device structure design, characteristics and physics in 0.5V GBC bulk MOSFET down to sub 0.1μm gate length. The major results obtained can be summarized as: first, 0.5V GBC operation features steep turn off behavior, high current drive, ideal logic voltage swings and negligible gate to body leakage currents; secondly, an Expoc structure which has shallow source/drain extensions and non uniform vertical and lateral doping profiles shows excellent threshold voltage ( V th ) rolloff down to 50nm gate length and high immunity of V th against channel doping fluctuations under the GBC mode of operation; and finally 0.5V GBC MOS transistors show comparable figure of merit in speed performance with 1V conventional counterpart in a wide V th design space. Furthermore, it is found that the optimum gate oxide thickness for 0.5V sub 0.1μm GBC MOSFETs would be 3nm.

为满足低电压CMOS晶体管高驱动电流和低静态功耗的要求,提出0.5V栅衬互连GBC(gate-bodyconnected)体硅MOSFET工作模式。利用二维器件模拟,对栅长直到70μm的器件结构设计、特性和器件物理研究。得到结果:0.5VGBC-MOSFET具有陡直的亚阈特性(10倍电流的S因子为~60mV),高的电流驱动能力和理想的逻辑摆幅,栅衬泄漏电流可以忽略;超浅源漏、非均匀纵横向掺杂的Expoc结构在GBC模式下栅长直到50nm时,仍有很好的Vth可控制性,这一结构的0.5VGBC-MOSFET与1V常规MOSFET在宽广的阈值电压设计空间中具有相似的速度品值;其理想栅氧厚度为3nm。

 
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