助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   低束流 的翻译结果: 查询用时:0.013秒
图标索引 在分类学科中查询
所有学科
核科学技术
更多类别查询

图标索引 历史查询
 

低束流
相关语句
  low beam current
     EXPERIMENTAL STUDY ON VIRCATOR WITH HIGH IMPADANCE AND LOW BEAM CURRENT
     一种高阻抗、低束流虚阴极器件的研制
短句来源
     On the basis of the principles of virtual cathode microwave generator, this paper gives a vircator experiment arrangement with high impedance and low beam current, and presents numerical calculation and analysis. The experiment measurement results agree with the theoretical calculation. The output peak power obtained in 3cm wave band is bigger than or equal to 20MW.
     基于虚阴极微波发生器的原理,设计一种特殊的高阻抗、低束流Vircator的实验装置,并结合理论研究对该实验系统的各种参量进行了数值计算与分析,实验测试结果与理论设计计算吻合,在3cm频段获得的输出功率≥20MW。
短句来源
     Ion beam induced charge microscopy was studied in nuclear microprobe using low beam current technology,the electrical property of GaAs semiconductor material was also studied.
     使用低束流技术 ,在高分辨率扫描质子微探针装置上开展了离子束感生电荷显微术 ,并研究了半导体材料 Ga As的电子学性能。
短句来源
     Ion beam induced charge technique (IBIC) with low beam current (fA level) and high efficiency is a new development of nuclear microscopy. It has been widely applied to the fields of semiconductor and microelectronical materials.
     离子束诱导电荷显微术 (IBIC)是核子微探针显微成像技术的又一新发展 ,它具有低束流(fA量级 )、高效率的特点 ,已被广泛应用于半导体材料和微电子材料研究中。
短句来源
  “低束流”译为未确定词的双语例句
     Investigation on the Structure and Photoluminescence Properties of Nd Ion Implanted Silicon Film with Low Flux
     低束流Nd~(3+)注入硅基薄膜结构及光致发光的研究
短句来源
     Phase structure of silicon-based film implanted with low flux Nd ion
     低束流钕离子注入外延硅薄层的结构研究
短句来源
     Preliminary design of a dedicated proton therapy linac (S-band) is described. The short beam pulse width and high repetition rate make the linac similar to the electron linacs now used for cancer therapy. This linac consists of ion source, RFQ,DTL, SCDTL, and SCL.
     讨论用于治癌的低束流高能量质子直线加速器的初步物理设计.采用短脉冲和高重复频率的S波段的加速结构,类似于医用电子直线加速器.总长26m,由离子源、RFQ、DTL、SCDTL及SCL组成,能量经70—200MeV有八档可调,平均束流强度10—40nA.
短句来源
     When lower Mo ion flux is used, the surface structure is changed obviously, the crystal gains are fined, the amount of grain boundaries against dislocation movement increases.
     实验中发现用较低束流密度的Mo离子注入钢明显地改变了钢表面的结构 ,可使钢表面晶粒细化 ,使阻止位错移动的晶界数量增多 ;
短句来源
     When the sample is implanted with low ion flux and then annealed, the phases at nano meter scale appears, and dispersed phase strengthening is formed also.
     用低束流密度注入后经过退火 ,在钢表面也形成了纳米尺寸的析出相 ,从而增加了表面弥散强化的效果 .
短句来源
更多       
  相似匹配句对
     Beam Crystallizations
     晶化
短句来源
     Beam Chopper
     调制器
短句来源
     EXPERIMENTAL STUDY ON VIRCATOR WITH HIGH IMPADANCE AND LOW BEAM CURRENT
     一种高阻抗、虚阴极器件的研制
短句来源
     Phase structure of silicon-based film implanted with low flux Nd ion
     钕离子注入外延硅薄层的结构研究
短句来源
     The sedimentary characteristics reflect a rapid deposition from volcaniclastic debris flow to low density flow.
     到密度的快速堆积性质。
短句来源
查询“低束流”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法,我们为您准备了出自英文原文的大量英语例句,供您参考。
  low beam current
Conventional beam line ion implantation system suffers from low beam current at low energies, therefore, cannot be used economically for high dose applications.
      
An experience at123I production with a low beam current cyclotron used in combination with the124Te(p, 2n)123I reaction on 90.8% enrichment124Te is described.
      
To maintain low beam current densities while increasing throughput, an engine twice the beam area of the NSTAR thruster was designed.
      
Then, these theoretical results are verified by experimental measurements at a low beam current of 0.16 A.
      
The disadvantages are the indirect determination of the dose due to the gas multiplication and the applicability to the low beam current.
      


On the basis of the principles of virtual cathode microwave generator, this paper gives a vircator experiment arrangement with high impedance and low beam current, and presents numerical calculation and analysis. The experiment measurement results agree with the theoretical calculation. The output peak power obtained in 3cm wave band is bigger than or equal to 20MW.

基于虚阴极微波发生器的原理,设计一种特殊的高阻抗、低束流Vircator的实验装置,并结合理论研究对该实验系统的各种参量进行了数值计算与分析,实验测试结果与理论设计计算吻合,在3cm频段获得的输出功率≥20MW。

Taking account of the transient thermoconduction process, the temperature raise informing SOI structure by means of constant-current, pulse, and scanning ion-implantation iscalculated by using the finite difference method. The calculation results show that when theion energy is larger than 150 keV and the dose rate is over 1×10~(15)/cm~2s, the effect of temperatureraise will be serious. Among the constant-current, pulse, and scanning ion implantation,the temperature raise and fluctuation of the scanning ion...

Taking account of the transient thermoconduction process, the temperature raise informing SOI structure by means of constant-current, pulse, and scanning ion-implantation iscalculated by using the finite difference method. The calculation results show that when theion energy is larger than 150 keV and the dose rate is over 1×10~(15)/cm~2s, the effect of temperatureraise will be serious. Among the constant-current, pulse, and scanning ion implantation,the temperature raise and fluctuation of the scanning ion implantation are most serious,and those of the constant-current one is least. At present, most of SIMOX or SIMNI materialsare prepared by using elevated-temperature target (400-700℃) under a low beam-current.However, the calculation results show that when the dose rate is over 8×10~(14)/cm~2·s,the temperature of wafer will be beyond 1000K, so that the heating for target is not needed,and a room temperature target is satisfied

本文考虑了瞬态的热传导过程,用有限差分方法计算了恒流、脉冲、扫描三种离子注入形成SOI结构时的温升效应。计算结果表明,当能量大于150keV和注入剂量率超过1×10~(15)/cm~2·s时,对于一般的散热系统来说(传热系数H≈2×10~(-2)W/cm~2K),温升效应将是严重的。恒流、脉冲、扫描三种注入方式比较起来,以扫描注入的温升和温度波动为最严重,恒流注入为最低。目前,在低束流情况下,大多采用热靶(400—700℃)来制造 SIMOX或SIMNI材料,本文的计算结果指出,当剂量率超过8×10~(14)/cm~2·s时,晶片温度将超过1000K(H取2×10~(-2)W/cm~2K),这时将没有必要再用热靶,用室温靶就能满足温度要求。本文给出的理论计算方法对其它材料(如金属、陶瓷等)仍可应用。

Preliminary design of a dedicated proton therapy linac (S-band) is described.The short beam pulse width and high repetition rate make the linac similar to the electron linacs now used for cancer therapy. This linac consists of ion source, RFQ,DTL, SCDTL, and SCL. Its tatol length is 26m. The final energy of the output proton beam is 70-200MeV, with average beam current of 10-40nA.

讨论用于治癌的低束流高能量质子直线加速器的初步物理设计.采用短脉冲和高重复频率的S波段的加速结构,类似于医用电子直线加速器.总长26m,由离子源、RFQ、DTL、SCDTL及SCL组成,能量经70—200MeV有八档可调,平均束流强度10—40nA.

 
<< 更多相关文摘    
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关低束流的内容
在知识搜索中查有关低束流的内容
在数字搜索中查有关低束流的内容
在概念知识元中查有关低束流的内容
在学术趋势中查有关低束流的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社