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金刚石薄膜生长
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  diamond film growth
     Bias-Enhanced Nucleation in Diamond Film Growth by CVD
     CVD金刚石薄膜生长中的偏压增强成核效应
短句来源
     Investigation of Influence Factors on Diamond Film Growth
     影响金刚石薄膜生长因素的研究
短句来源
     Review of Diamond Film Growth Using Combustion Flame
     火焰法金刚石薄膜生长研究
短句来源
     In Situ Optical Emission Spectroscopy of the Diamond Film Growth Process in Transverse Bias
     原位光发射谱研究横向偏压金刚石薄膜生长过程
短句来源
     Hot-filament chemical vapor deposition is a common method used for diamond film growth. Substrate temperature profiles and concentration of carbon source are the main deposition parameters in a HFCVD system.
     热丝法化学气相沉积金刚石薄膜系统内 ,衬底温度和碳源气体浓度是金刚石薄膜生长最为重要的参数。
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  “金刚石薄膜生长”译为未确定词的双语例句
     The Analysis of Growth Theory about Synthetic Diamond Film by Microwave Plasma CVD Method
     微波CVD法合成金刚石薄膜生长机理分析
短句来源
     Experimental Study on Diamond Films Growth by CVD
     燃焰法 CVD 金刚石薄膜生长过程的实验研究
短句来源
     PREDICTION OF GROWTH CONDITIONS FOR DIAMOND FILM IN CARBON-HYDROGEN-CHLORINE SYSTEM
     碳—氢—氯体系金刚石薄膜生长条件预测
短句来源
     Through comparing the model with the experimental data,it is suggested that the kinetic model can be used for the actual growth of diamond films,and for the identification of the diamond growth mechanisms.
     本模型的理论结果与实验数据的对比表明,它可以用于实际金刚石薄膜生长过程的研究,为生长工艺参数的优化提供理论基础,并且有助于对金刚石生长机理的认识
短句来源
     CH3 and C2H2 are the dominant growth precursors during chemical vapor deposition diamond process. The ratio of C2H2 to CH3 concentration ([C2H2]/[CH3]) will affect the growth orientation of diamond film. In this paper [C2H2]/[CH3] as a function of substrate temperature is calculated under 4kPa pressure according to a non-equilibrium thermodynamic coupling model reported previously.
     用非平衡热力学耦合模型计算了CVD金刚石薄膜生长过程中C1H2与CH3浓度之比[C2H2]/[CH3]随衬底温度和CH4浓度的变化关系,从理论上探讨了金刚石薄膜(111)面和(100)面取向生长与淀积条件的关系。
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  相似匹配句对
     The gas-Phase Epitaxial Growth of Diamond Film
     金刚石薄膜气相外延生长
短句来源
     Phase Diagrams in C-H-N System for Low Pressure CVD Diamond Growth
     C-H-N体系生长金刚石薄膜
短句来源
     Growth of CVD diamond thin films with high growth rate
     金刚石薄膜生长速度研究
短句来源
     Selective Growth Technologies of Diamond Film
     金刚石薄膜选择生长技术
短句来源
     Growth of Diamond Film on Ta Substrate
     在钽衬底上生长金刚石薄膜
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  diamond film growth
The preetching of the Ti substrate produces the titanium hydride layer that can affect the boron-doped diamond film growth significantly.
      
Novel technique for hetero-epitaxial diamond film growth on cubic boron nitride from iron carbide at high temperature and high p
      
Study of nanocrystalline diamond film growth in rf hybrid laser deposition systems in O2, H2 and H2+Ar ambients
      
The model produced a reasonable estimate for the bulk diamond film growth rate.
      
This short review summarizes basic knowledge about the diamond film growth.
      
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Vacuum evaporating device which was designed by us is used to grow dia-mond films on the substrate of silicon single crystals from a mixture of CH_4 and H_2 gasesat lower pressure by hot-filament CVD method.The results of X-ray diffraction,Ramanspectrum and SEM analysis show that the films present polycrystalline diamond strueture,the process of the films growth is stable and the repeatability of results is excellent.Mecha-nism of growth of diamond films are also investigated.

在低压下,以甲烷和氢的混和气为原料,应用热丝 CVD 法,在 Si 基片上生长出了金刚石薄膜。经 X 射线衍射、激光刺曼光谱和扫描电子显微镜分析,生长产物呈多晶金刚石结构。探讨了金刚石薄膜的生长机理。

The growth characteristics of diamond films deposited by DC arc plasma jet method were studied and compared with that of diamond films deposited by thermal CVD method.

本文研究了用直流电弧等离子体喷射法快速沉积的金刚石薄膜的生长特性,并与用热解CVD法沉积的金刚石薄膜生长特性做了比较。

The history of low pressure diamond deposition and recent progresses are reviewed. The advantages and drawbacks of different diamond deposition methods are compared breifly. At low pressure condition diamond is in metas-

本文回顾了低压合成金刚石的历史,对各种金刚石薄膜的生长方法进行了简要的对比。低压条件下金刚石处于亚稳态而石墨处于稳定相,本文重点介绍了低压条件下抑制石墨形成促进金刚石生长的关键因素。对金刚石在不同衬底上的成核状况,衬底的表面状况对成核的影响,生长过程中原子氢的作用,以及衬底温度的影响等作了概括,提出了目前阶段金刚石薄膜研究中所要解决的问题。

 
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