助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   生长金刚石膜的 的翻译结果: 查询用时:0.505秒
图标索引 在分类学科中查询
所有学科
更多类别查询

图标索引 历史查询
 

生长金刚石膜的
相关语句
  diamond film growth
     EFFECT OF NEGATIVE BIAS ON DIAMOND FILM GROWTH ON MO SUBSTRATE
     负偏压对M_0衬底上生长金刚石膜的影响
短句来源
     Influence of Silicon Carbide on Diamond Film Growth on Heterogeneous Substrates
     SiC在异质衬底生长金刚石膜的作用分析
短句来源
  “生长金刚石膜的”译为未确定词的双语例句
     Study of Diamond Film on Silicon Tip Array
     在硅微尖上生长金刚石膜的研究
短句来源
     Simulation of Gas Phase Chemistry in C-H-O and C-H-N Systems for Chemical Vapor Deposition Diamond Films
     C-H-O和C-H-N体系生长金刚石膜的气相化学模拟
短句来源
     The uniformity of large area diamond filrns in deposition process and quality of diamond films is researched. The results show tha the DC arc used for deposition of diamond films is uniform.
     研究了大面积金刚石膜沉积过程中的均匀性问题和金刚石膜质量的均匀性问题.研究表明:用于生长金刚石膜的大面积磁旋转等离子体电弧是均匀的,能使气体混合均匀:金刚石膜在形核阶段是均匀的;
短句来源
     THE INFLUENCES OF TEMPERATURE FIELD ON LARGE AREA DIAMOND GROWTH OF DIAMOND FILM BY HFCVD
     温度场对热丝化学气相沉积大面积生长金刚石膜的影响
短句来源
     The growth mechanism of diamond films with a high growth rate and the origin of stress in the films have also been discussed briefly.
     文中还对高速率生长金刚石膜的机理及内应力形成的原因进行了讨论。
短句来源
更多       
  相似匹配句对
     DEPOSITION AND HIGH-ORIENTED GROWTH OF DIAMOND FILMS
     金刚石膜的制备和高取向生长
短句来源
     Studies of Diamond Film on the Silicon Tips Array
     硅微尖上金刚石膜的生长
短句来源
     Application of C V D diam ond film isproposed. Key w ords  Chem ical vapor deposition, Diam ond f
     C V D 金刚石膜的应用。
短句来源
     Study of Diamond Film on Silicon Tip Array
     在硅微尖上生长金刚石膜的研究
短句来源
     Boron-Doped Diamond (BDD) film of deposition is discussed.
     主要介绍硼掺杂金刚石膜的生长.
短句来源
查询“生长金刚石膜的”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法,我们为您准备了出自英文原文的大量英语例句,供您参考。
  diamond film growth
The preetching of the Ti substrate produces the titanium hydride layer that can affect the boron-doped diamond film growth significantly.
      
Novel technique for hetero-epitaxial diamond film growth on cubic boron nitride from iron carbide at high temperature and high p
      
Study of nanocrystalline diamond film growth in rf hybrid laser deposition systems in O2, H2 and H2+Ar ambients
      
The model produced a reasonable estimate for the bulk diamond film growth rate.
      
This short review summarizes basic knowledge about the diamond film growth.
      
更多          


High quality diamond films have been rapidly synthesised by the DC arc discharge plasma CVD in a hydrogen-methane mixture gas. The properties of the films are tested and analyzed by scanning electron microscopy, X-ray diffraction and Raman spectra. In order to find out the growth mechanism of vapor deposited diamond, in situ optical emission spectra of plasma under practical growth conditions are measured. It is found that the key factor of rapid growth diamond film is the presence of a large number of atomic...

High quality diamond films have been rapidly synthesised by the DC arc discharge plasma CVD in a hydrogen-methane mixture gas. The properties of the films are tested and analyzed by scanning electron microscopy, X-ray diffraction and Raman spectra. In order to find out the growth mechanism of vapor deposited diamond, in situ optical emission spectra of plasma under practical growth conditions are measured. It is found that the key factor of rapid growth diamond film is the presence of a large number of atomic hydrogen in the plasma.

应用直流弧光放电分解CH_4和H_2混合气体成功地实现了高速生长多晶金刚石膜,应用扫描电子显微镜、X射线衍射仪、Raman谱仪对所得样品进行检测和分析,为了弄清楚金刚石膜的生长机理,在实际生长环境下“原位”测量了不同条件下直流弧光等离子体的光发射谱,结果发现:高速生长金刚石膜的关键是该气相反应中有大量的原子H存在。

In this paper the state of interface and growth process of diamond film grown on Si(100) by EACVD were observed and studied by Transmission electron microscopy (TEM) and Scanning election mieroscopy (SEM). It shows that the interface is an interfacial layer of amorphous carbon and interplanar spacings corresponding with the center of diffraction ring is irregular and the width of interfacial layer is not unifom from 0.2μm to 0.8μm.The diamond film grown on the interface consists of primary nucleus laver and...

In this paper the state of interface and growth process of diamond film grown on Si(100) by EACVD were observed and studied by Transmission electron microscopy (TEM) and Scanning election mieroscopy (SEM). It shows that the interface is an interfacial layer of amorphous carbon and interplanar spacings corresponding with the center of diffraction ring is irregular and the width of interfacial layer is not unifom from 0.2μm to 0.8μm.The diamond film grown on the interface consists of primary nucleus laver and crystalline grainThe interface state as well as growth process of diamond at different regions on a sample or different samples is not same.

本文以Si(100)为衬底,利用电子增强式化学汽相沉积方法生长的金刚石膜为试样,用透射电镜(Cross-seotion制样)和扫描电镜观测了金刚石薄膜界面状态及其生长过程。研究表明:界面是一种非晶态的碳的过渡层,其衍射晕环的中心所对应的面间距与金刚石相近。界面的边缘或平整或凹凸不平,参差不齐,宽度在0.2-0.8μm之间。界面上所生长的金刚石薄膜由胚芽层和晶粒层组成;胚芽层有三种形态;同一试样上的不同部位或不同试样上的界面状态及生长过程是不同的。

Electron energy-loss spectroscopy (EELS) has been applied to the analysis of diamond films(DF), diamond-like films (DLC), and graphite. The main energy-loss peaks for DF are thesurface and bulk plasmon energy losses at 23 eV and 34 eV. respectively, and the interband tran-sitions at 5.4 eV. The characteristic energy loss features of DLC are π and (π+σ) electronbulk plasmon energy losses at 4.5 eV and 22.4 eV respectively, and interband transition of13 eV. The energy loss peaks for graphite are the π electron...

Electron energy-loss spectroscopy (EELS) has been applied to the analysis of diamond films(DF), diamond-like films (DLC), and graphite. The main energy-loss peaks for DF are thesurface and bulk plasmon energy losses at 23 eV and 34 eV. respectively, and the interband tran-sitions at 5.4 eV. The characteristic energy loss features of DLC are π and (π+σ) electronbulk plasmon energy losses at 4.5 eV and 22.4 eV respectively, and interband transition of13 eV. The energy loss peaks for graphite are the π electron plasmon energy loss at 6 eV, in-terband transition and C-axis plasmon at 13 eV, and energy losses at 20 eV and 25.6 eV causedby C-axis plasmon and plasmon in the basal plane, respectively. The EELS and Raman spec-tram of DLC with H have been compared with that of DLC without H. The ratios of sp~3 tosp~2 carbon sites in DLC both with and without H, and in the second phase DLC of diamondfilms have been calculated according to the π and (π+σ) electron plasmon energy losses.The ratios of the intensity of hω_p (π+σ) loss peak to that of hω_p(σ) loss peak have been usedto estimate the relative content of the second phase DLC in diamond films.

用电子能量损失谱(EELS)研究了金刚石膜、类金刚石膜和高取向石墨的特征能量损失峰.金刚石膜的特征峰主要是5.4eV和15eV的带间跃迁,23eV和34eV的表面等离子激元和体等离子激元.类金刚石膜的特征峰主要是 4.5eV的π电子的体等离子激元,13eV的带间跃迁,22.4eV的(π+ σ)电子的体等离子激元.石墨的特征峰主要是6eV的π电子的等离子激元,13eV带间跃迁和C轴方向等离子激元,20eV的C轴方向的等离子激元和25.6eV的基面等离子激元.比较了α-C和α-C:H能量损失谱和喇曼光谱,利用hω_(p(π+σ))和hω_(p(x))峰位计算了类金刚石膜中sp~3键和sp~2键的比例.研究了不同CH_4浓度生长的金刚石膜的能量损失谱,利用hω_(p(π+σ))和hω_(p(x))峰位计算金刚石膜中类金刚石第二相内的sp~2键和sp~3键的比例,利用第二相的体等离子激元损失峰hω_(p(π+σ))与金刚石的体等离子激元损失峰hω_(p(σ))的强度比来估价第二相的多少.

 
<< 更多相关文摘    
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关生长金刚石膜的的内容
在知识搜索中查有关生长金刚石膜的的内容
在数字搜索中查有关生长金刚石膜的的内容
在概念知识元中查有关生长金刚石膜的的内容
在学术趋势中查有关生长金刚石膜的的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社