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激光器阈值
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  laser threshold
     The effect of thin mezzanine thickness on laser threshold value and T_0 in 1.3μm InGaAsp/InP DCC structure
     1.3μm InGaAsp/Inp DCC结构对激光器阈值和T_0值的影响
短句来源
     The Effect of Thin Mezzanine Thickness on Laser Threshold Value and T_0 in 1. 3μm InGaAsp/InP DCC Structure
     1.3μm InGaAsp/Inp DCC结构薄夹层厚度对激光器阈值和T_0值的影响
短句来源
     Influence of energy-transfer up-conversion on Tm,Ho:YLF laser threshold
     能量传递上转换对Tm,Ho:YLF激光器阈值的影响
短句来源
     It investigated the effect of thin mezzanine thickness on laser threshold value and T0 in 1.3μm InGaAsp/InP DCC Structure and obtained the optimum mezzanine thickness.
     研究了1.3μmInGaAsp/InpDCC结构中间夹层厚度对激光器阈值和T0值的影响,并得到了最佳的夹层厚度.
短句来源
     It investigated the effect of thin mezzanine thickness on laser threshold value and T 0 in 1.3μm InGaAsp/InP DCC structure and obtained the optimum mezzanine thickness.
     研究了 1 .3 μmInGaAsp InpDCC结构中间夹层厚度对激光器阈值和T0 值的影响 ,并得到了最佳的夹层厚度
短句来源
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  lasers threshold
     Studies on Semiconductor Lasers Threshold Features
     半导体激光器阈值行为的研究
短句来源
     For ridge waveguide structure single quantum well lasers, threshold current of as low as 8mA and very good uniformity are also demonstrated.
     利用湿法化学腐蚀所制备的脊形波导结构单量子阱激光器阈值电流最低可达8mA,且具有非常好的均匀性.
短句来源
  laser threshold value
     The Effect of Thin Mezzanine Thickness on Laser Threshold Value and T_0 in 1. 3μm InGaAsp/InP DCC Structure
     1.3μm InGaAsp/Inp DCC结构薄夹层厚度对激光器阈值和T_0值的影响
短句来源
     The effect of thin mezzanine thickness on laser threshold value and T_0 in 1.3μm InGaAsp/InP DCC structure
     1.3μm InGaAsp/Inp DCC结构对激光器阈值和T_0值的影响
短句来源
     It investigated the effect of thin mezzanine thickness on laser threshold value and T0 in 1.3μm InGaAsp/InP DCC Structure and obtained the optimum mezzanine thickness.
     研究了1.3μmInGaAsp/InpDCC结构中间夹层厚度对激光器阈值和T0值的影响,并得到了最佳的夹层厚度.
短句来源
     It investigated the effect of thin mezzanine thickness on laser threshold value and T 0 in 1.3μm InGaAsp/InP DCC structure and obtained the optimum mezzanine thickness.
     研究了 1 .3 μmInGaAsp InpDCC结构中间夹层厚度对激光器阈值和T0 值的影响 ,并得到了最佳的夹层厚度
短句来源
  “激光器阈值”译为未确定词的双语例句
     In the laser whosewaveguide material was In0.92Ga0.08As0.175P0.825, the threshold current was
     以In0.92Ga0.08As0.175P0.825为波 导 层 的 激 光 器 阈 值 电 流 为 110.63mA , L-I 曲 线 的 斜 率 特 性 为
短句来源
     The threshold is 20 mW.
     所制作的激光器阈值为20mW。
短句来源
     It has a threshold of 40.4mW, a slope efficiency of 1.08% and an output power of 1.11mW.
     激光器阈值为40.4mW,斜率效率为1.08%,最大输出功率为1.11mW。
短句来源
     The laser exhibits 83.4mW threshold, 79.6% slope efficiency and as high as 233mW output power.
     激光器阈值为83.4mW,斜率效率为79.6%,最大输出功率为233mW。
短句来源
     We also analyzed the threshold current and L-Irelation of the lasers whose waveguide material was In0.775Ga0.225As0.489P0.511and In0.92Ga0.08As0.175P0.825 respectively.
     我们还分析了用两种波导层材料构成的激光器的阈值特性和输出光功率和输入电流(L-I) 特性:以 In0.775Ga0.225As0.489P0.511 为波导层的激光器阈值电流为
短句来源
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  laser threshold
Numerical simulations of the current dependence of the intensity of spontaneous emission above the laser threshold and of the differential quantum efficiency allowed us to determine the intraband absorption k0 ≈5.6×10-16 cm2.
      
Calculations of the internal losses at laser threshold showed that they increase more than fourfold when the cavity length is decreased from 500 μm to 100 μm.
      
A propagation loss of 9.2 cm-1 within the intermixed passive waveguide section has been measured by comparing laser threshold currents of all active and integrated extended passive cavity devices.
      
Quantum description of a dye laser threshold region
      
Simple expressions for the shape of this peak are obtained, in the absorbing case, for waveguide lengths large compared to the absorption length, and, in the amplifying case, close to the laser threshold.
      
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  lasers threshold
The iris is the most sensitive tissue for all three lasers (threshold radiant exposure, Argon: 0.004 kJ/cm2, Ruby: 0.01 kJ/cm2, YAG: 0.05 kJ/cm2).
      
  laser threshold value
For input pump powers greater than the Stokes laser threshold value, the intra-cavity pump power remains roughly constant.
      


Our apparatus for multilayer liquid phase epitaxy is described. Factors relating to the thin layer LPE growth are discussed. The epitaxy experiments are arranged to take advantage of the mathe- matical method of orthogonal process design. The regime of continuous and uniform growth has been found for the purpose of improving the threshold current density of GaAs-Ga1-xAlx As DH lasers up to 1000-2000A/cm2.

介绍我们采用的多次液相外延实验装置,讨论影响薄层液相外延生长的因素。采用 “正交设计”的数学方法安排外延试验,找到多层连续均匀生长的条件.使GaAs- Ga1-xAlxAs双异质结激光器阈值电流密度达到 1000—2000安培/平方厘米。

The measured dependence of threshold current of DH lasers with temperature is found to obey an exponential law near room temperature. The values of thermal resistance and series resistance are obtained from these measurements. A method of measuring spectro-temperature effect is described. The values of thermal resistance and series resistance of the laser can be estimated from the wave length shift.

测量GaAs—GaAlAs双异质结激光器阈值电流随温度的变化,表明在室温附近符 合指数规律.通过这一测量,可以得到激光器热阻和串联电阻数值。介绍光谱温度效应 测量方法.通过激光器光谱峰位的移动.也可以推算器件的热阻与串联电阻.

Our apparatus for multilayer liquid phase epitaxy is described. Factors relating to the thin layer LPE growth are discussed.The epitaxy experiments are arranged to take advantage of the mathematical method of orthogonal process design. The regime of continuous and uniform growth has been found for the purpose of improving the threshold current density of GaAs-Ga1-xAlx As DH lasers up to 1000-2000A/cm2.

介绍我们采用的多次液相外延实验装置,讨论影响薄层液相外延生长的因素。采用“正交设计”的数学方法安排外延试验,找到多层连续均匀生长的条件,使GaAs—Ga_(1-x)A1_xAs双异质结激光器阈值电流密度达到1000—2000安培/平方厘米。

 
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