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红外光吸收谱
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  infrared absorption spectrum
     Its color can be divided into original color and secondary color. The report, from the mineral and chemical components to the ultraviolet-visible-near infrared absorption spectrum, analysed the color-causing mechanism of multicolor.
     可分为原生色和次生色,从翡翠的矿物组成,化学成分特征,以及紫外—可见—近红外光吸收谱分析探讨各种颜色的成因。
短句来源
  “红外光吸收谱”译为未确定词的双语例句
     The effects of high-energy electron irradiation on the properties of silicon are studied by photo- voltage and infrared absorption spectra.
     结合红外光吸收谱的测量结果,分析了高能电子辐照对硅单晶性能的影响。
短句来源
     With Fourier transform infrared spectroscopy (FTIR), the infrared spectra of the film, which has been prepared on Si underlay, can be draw . The result show that there are β-C 3N 4 in the films .
     采用傅里叶变换红外光谱(FTIR)技术 ,对基片上的碳氮膜进行红外光吸收谱测量 ,发现所制备的膜中有 β相的C3N4;
短句来源
  相似匹配句对
     Near Infrared Absorption in p-Inp Single Crystals
     p型InP单晶的近红外光吸收
短句来源
     Exfoliation and Simulation of IR Spectra Peaks
     红外光吸收峰的剥离和模拟
短句来源
     Laser calorimeter for IR absorption measurement of thin films
     激光量热法测量红外光学薄膜吸收
短句来源
     Study on Near-Infrared Absorption Mechanism of Alkali Lignin
     碱木素的近红外光吸收机理的研究
短句来源
     K uptake by spring maize is significantly improved by potassium fertilizer and established the dynamic model of N.
     K的吸收。 建立了N.
短句来源
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  infrared absorption spectrum
We computed the band profiles in the infrared absorption spectrum for a pair of molecules at a fixed distance R ~ 5 ?, typical of condensed media.
      
The far infrared absorption spectrum caused by optical transitions of holes between size-quantization subbands is calculated for p-GaAs/AlGaAs(001) quantum-well structures.
      
With 740-FT-IR infrared spectrometric analyzer, the infrared absorption spectrum of SiO2 in couplers at different drawing velocities was measured, and two characteristic peaks in the wavenumber range of 650-2000 cm-1 were observed.
      
The results of thermal gravimetric analysis (TGA) and near-infrared absorption spectrum show that the materials have high thermal stability and high optical transparency in the infrared communication region.
      
The far-infrared absorption spectrum (20-250cm-1) of the superionic conductor Li3N -with6Li- and7Li-isotopes in the starting material-has been measured for different polarizations and temperatures (4-150 K).
      
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A set of coal samples are characterized by FT-i.r. spectroscopy, and the assignment of the frequencies observed in coal spectra is analysed and discussed in delail in this paper. At the same time, the law of the variation of the groups in the macromolecule of coal with the increase in the rank of coal is researched.

用付氏变换红外光谱仪测试了一组镜煤的红外光吸收谱,就煤的红外光吸收带的归宿进行了分析;同时,还研究了煤大分子中主要基团随煤变质加深的变化规律。

A set of vitrain coal samples were characterized by FT-i.r. spctrometer, and the assignment of the frequencies observed in coal spectra is analysed and discussed in detail in this paper. The law of the variation of the guantity of basic groups in coal macromolecule with the increase of coal metamorphism is researched. At the same time, the author disctissed the question that, by using the abnormal feature of coal macromolecular structure, the hazard of the outburst of coal and gas in colliery is predicted.

本文用付氏变换红外光谱仪测试了煤样的红外光吸收谱,就煤的红外光主要吸收带的归宿进行了详细分析,同时还研究了煤大分子中主要基团含量随煤变质加深的变化规律以及用煤大分子结构异常特征预测煤和瓦斯突出潜在危险性。

The changes of the minority carrier diffusion lengths of the silicon single crystal before and after 1MeV high-energy electron irradiation at flux ranging from 10~(13)to10~(16)cm~(-2)have been measured by photovoltage technique. The effects of high-energy electron irradiation on the properties of silicon are studied by photo- voltage and infrared absorption spectra. The experimental results show that the ra- diation resistance of the silicon with higher resistivity is higher and that irradiation at large flux...

The changes of the minority carrier diffusion lengths of the silicon single crystal before and after 1MeV high-energy electron irradiation at flux ranging from 10~(13)to10~(16)cm~(-2)have been measured by photovoltage technique. The effects of high-energy electron irradiation on the properties of silicon are studied by photo- voltage and infrared absorption spectra. The experimental results show that the ra- diation resistance of the silicon with higher resistivity is higher and that irradiation at large flux can change n-type silicon into p-type. Some important parameters such as defect concentration induced by electron irradiation are calculated.

采用光伏方法测量了1MeV高能电子辐照(辐照剂量为10~(13)~10~(16)cm~(-2))前后硅单晶少子扩散长度的变化;结合红外光吸收谱的测量结果,分析了高能电子辐照对硅单晶性能的影响。实验结果表明:高阻硅比低阻硅具有更强的抗辐射能力,大剂量的电子辐照可以改变n型硅的导电类型。文中还计算了电子辐照在硅中所产生的缺陷浓度等一些重要参数。

 
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