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The control of Hg pressure is a major problem of LEP growth of HgCdTe. In this paper the lost of Hg and its affections and control in open tube sliding LEP system are analysed theoretically. A unique method of controlling Hg pressure, called pseudo-balance Hg pressure method is proposed. In this method, a circulatory system of Hg that is efficacious for control of Hg pressure is used. By experiments of growth conditions, the better way of LEP growth of HgCdTe was found. The HgCdTe epitaxial layers have been... The control of Hg pressure is a major problem of LEP growth of HgCdTe. In this paper the lost of Hg and its affections and control in open tube sliding LEP system are analysed theoretically. A unique method of controlling Hg pressure, called pseudo-balance Hg pressure method is proposed. In this method, a circulatory system of Hg that is efficacious for control of Hg pressure is used. By experiments of growth conditions, the better way of LEP growth of HgCdTe was found. The HgCdTe epitaxial layers have been grown with mirror-like surface morphology,x = 0.211+0.002 and x = 0.28+ 0.001, mobility of 1.81 × 103 cm2/V·s for p-type and 3.36×05 cm2/V·s for n-type (not annealed), carrier concentration of 1.0×1016 /cm3 for p-type and 1.09×1015 /cm3 for n-type (not annealed) at 77 K. 本文对液相外延生长HgCdTe及其汞压控制进行了研究。在理论上对开管滑动系统中汞损失的影响作了分析和计算,提出了准平衡汞压的方法。在实验中设计制作了独特的汞回流装置,实现了对汞压的控制。通过生长工艺的条件实验,得到了各工艺参数影响外延片性能的关系,制备出表面光亮,组分为x=0.211±0.002,x=0.28±0.001的Hg_(1-x)Cd_xTe外延片。在77°K下n型(未退火)和P型外延片的迁移率分别为3.36×10~3cm~2/V·s和1.81×10~3cm~2/V·s,载流子浓度分别为1.09×10~(15)cm~(-3)和1.04×10~(16)cm~(-3)。 This paper introduces the course of developing a high activity ~(113)Sn-~(113m)Ingenerator,reports a series of experiments for seeking the satisfactory conditi-ons of the production process and approaches the chemical principles in theprocess.Thus a feasible production process has been obtained. 本文介绍了高活度~(113)Sn-~(113m)In 发生器的研制过程;报道了一系列工艺条件实验,探讨了生产过程中的化学原理,从而给出了一个生产高活度~(113)Sn-~(113m)In 发生器的生产工艺。 This article introduces the expereimental test-method and test results of the technology condition of internal and external MSIT. 该文概要地介绍了国内外磁防垢技术工艺条件的实验测试方法和测试结果,同时还论述了磁防垢技术的应用机理,并以“氢键破坏,缔合物解体”的模型,给出磁防垢工艺条件的参数方程。
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