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工艺条件实验
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  technologic condition experiment
     The methods of removal of organic pollutants have been discussed detailedly at the present time. The catalyst of ZDL 1 has been prepared using honeycomb ceramic support that was modified by using Al 2O 3. The technologic condition experiment was studied at fixed bed reactor.
     本文讨论了目前有机污染物脱除的各种方法 ,并将催化活性组分担载在经Al2 O3 修饰的整体蜂窝陶瓷支撑体上 ,制备了催化氧化法脱除低浓度有机污染物 (VOCs)ZDL - 1催化剂 ,在固定床反应器进行了连续工艺条件实验
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  “工艺条件实验”译为未确定词的双语例句
     To design the technical condition of pectin extraction from apple residue. the experimental results show that the optimum technological conditions is the pH value 2.0, solid-liquid ratio is 1∶13, the best temperature is 85℃, the total time is 1.5h, the extraction yield could be up to 14.04%.
     探讨了以苹果渣为原料提取果胶的最佳工艺条件,实验结果表明萃取液的pH值为2.0、料液比为1∶13、温度为85℃、水解时间为1.5h为提取果胶的最佳工艺条件,产率达14.04%。
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     The process conditions and stability of F-90 ferrite catalyst which was prepared by a new technology and was used for oxidation dehydrogenation , were researched in a φ 25 mm × 2.5 mm × 500 mm fixed bed reactor .
     在(?) 25 mm×2.5 mm×500 mm固定床反应器上,对采用新工艺制备的丁烯氧化脱氢制丁二烯F-90铁酸盐催化剂进行了工艺条件实验和稳定性考察。
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     Optimum reaction conditions of redistribution were determined,in which the molor ratio of reactants was 1.0,LHSV was 0.66 mL/(h·g-cat), reaction temperature was 320℃.
     通过工艺条件实验,确定了在活性炭固载 AlCl_3催化剂上一甲和三甲再分配反应的适宜工艺条件为:反应物摩尔比为1.0.液时空速 LHSV 为0.66 mL/(h·g-cat),反应温度为320℃,得到二甲收率70%左右。
短句来源
     The application results showed that the RAs - 10 dearsenic rate was more than 90% and the arsenic tolerance was 4.0% under the mild operating conditions.
     工艺条件实验及催速容砷实验结果表明:RAs-10脱砷剂的脱砷效率大于90%,其容砷量可达到4.0%(质量分数)。
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     Study on Technology of the Coke Wastewater Treatment
     焦化废水催化氧化处理的工艺条件实验
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     fermentation technical conditions;
     发酵工艺条件 ;
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     the process conditions were optimized;
     优化了反应工艺条件;
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     f(x), is given.
     f(x)的条件
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     Therein A Let Z be a Banach space, / 6 C(X. R) , satisfying the P. S. condition, Cbe the unique critical value of / in [c, b] C R suppose that all the comsected component of K, are isolated points.
     S. 条件,c是f在[c,b](?)
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     The optimum conditions were determined by test.
     通过实验确定了最佳工艺条件
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The control of Hg pressure is a major problem of LEP growth of HgCdTe. In this paper the lost of Hg and its affections and control in open tube sliding LEP system are analysed theoretically. A unique method of controlling Hg pressure, called pseudo-balance Hg pressure method is proposed. In this method, a circulatory system of Hg that is efficacious for control of Hg pressure is used. By experiments of growth conditions, the better way of LEP growth of HgCdTe was found. The HgCdTe epitaxial layers have been...

The control of Hg pressure is a major problem of LEP growth of HgCdTe. In this paper the lost of Hg and its affections and control in open tube sliding LEP system are analysed theoretically. A unique method of controlling Hg pressure, called pseudo-balance Hg pressure method is proposed. In this method, a circulatory system of Hg that is efficacious for control of Hg pressure is used. By experiments of growth conditions, the better way of LEP growth of HgCdTe was found. The HgCdTe epitaxial layers have been grown with mirror-like surface morphology,x = 0.211+0.002 and x = 0.28+ 0.001, mobility of 1.81 × 103 cm2/V·s for p-type and 3.36×05 cm2/V·s for n-type (not annealed), carrier concentration of 1.0×1016 /cm3 for p-type and 1.09×1015 /cm3 for n-type (not annealed) at 77 K.

本文对液相外延生长HgCdTe及其汞压控制进行了研究。在理论上对开管滑动系统中汞损失的影响作了分析和计算,提出了准平衡汞压的方法。在实验中设计制作了独特的汞回流装置,实现了对汞压的控制。通过生长工艺的条件实验,得到了各工艺参数影响外延片性能的关系,制备出表面光亮,组分为x=0.211±0.002,x=0.28±0.001的Hg_(1-x)Cd_xTe外延片。在77°K下n型(未退火)和P型外延片的迁移率分别为3.36×10~3cm~2/V·s和1.81×10~3cm~2/V·s,载流子浓度分别为1.09×10~(15)cm~(-3)和1.04×10~(16)cm~(-3)。

This paper introduces the course of developing a high activity ~(113)Sn-~(113m)Ingenerator,reports a series of experiments for seeking the satisfactory conditi-ons of the production process and approaches the chemical principles in theprocess.Thus a feasible production process has been obtained.

本文介绍了高活度~(113)Sn-~(113m)In 发生器的研制过程;报道了一系列工艺条件实验,探讨了生产过程中的化学原理,从而给出了一个生产高活度~(113)Sn-~(113m)In 发生器的生产工艺。

This article introduces the expereimental test-method and test results of the technology condition of internal and external MSIT.

该文概要地介绍了国内外磁防垢技术工艺条件的实验测试方法和测试结果,同时还论述了磁防垢技术的应用机理,并以“氢键破坏,缔合物解体”的模型,给出磁防垢工艺条件的参数方程。

 
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