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中间温度预退火过程
相关语句
  intermediate pre-annealing process
     Effects of intermediate pre-annealing process on crystallinity and ferroelectricity were investigated.
     在薄膜的快速退火过程中,增加了一个中间温度预退火过程,并研究了该过程对薄膜晶型结构和铁电性能的影响.
短句来源
     The results show that the intermediate pre-annealing process can affect the selection of crystalline texture.
     结果发现,中间温度预退火过程可以影响薄膜对晶型结构的选择.
短句来源
     PLZT thin film without intermediate pre-annealing process displays (100)-preferential orientation.
     没有中间温度预退火过程的薄膜,显示出(100)择优取向;
短句来源
     PLZT thin film without intermediate pre-annealing process shows the worse ferroelectricity. PLZT thin film with intermediate pre-annealing process of 380癈 displays the best properties.
     对薄膜铁电性能的研究表明,没有中间温度预退火过程的薄膜的铁电性能较差,经380℃预退火的薄膜显示出最佳的铁电性能.
短句来源
  相似匹配句对
     PLZT thin film without intermediate pre-annealing process displays (100)-preferential orientation.
     没有中间温度预退火过程的薄膜,显示出(100)择优取向;
短句来源
     The results show that the intermediate pre-annealing process can affect the selection of crystalline texture.
     结果发现,中间温度预退火过程可以影响薄膜对晶型结构的选择.
短句来源
     T is temperature, ℃.
     T为温度,℃。
短句来源
     The Temperature Difference in the Heat Transfer
     传热过程温度
短句来源
     CONTROL STRATEGY OF INTERMEDIATE TEMPERATURE FOR HOT STRIP LAMINAR COOLING
     热轧带钢层流冷却过程中间温度的控制策略
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Pb0.985La0.01(Zr,Ti)O3(PLZT) thin films were deposited onto LNO(100)/Si substrates by metal-organic decomposition (MOD) technique. An intermediate pre-annealing process was added into the rapid thermal anneal (RTA) process to treat the films. Effects of intermediate pre-annealing process on crystallinity and ferroelectricity were investigated. The results show that the intermediate pre-annealing process can affect the selection of crystalline texture. PLZT thin film without intermediate pre-annealing process...

Pb0.985La0.01(Zr,Ti)O3(PLZT) thin films were deposited onto LNO(100)/Si substrates by metal-organic decomposition (MOD) technique. An intermediate pre-annealing process was added into the rapid thermal anneal (RTA) process to treat the films. Effects of intermediate pre-annealing process on crystallinity and ferroelectricity were investigated. The results show that the intermediate pre-annealing process can affect the selection of crystalline texture. PLZT thin film without intermediate pre-annealing process displays (100)-preferential orientation. However, PLZT thin films with intermediate pre-annealing process show random orientation. PLZT thin film without intermediate pre-annealing process shows the worse ferroelectricity. PLZT thin film with intermediate pre-annealing process of 380癈 displays the best properties. The ferroelectricity is mainly attributed to both the crystallinity and the defects in the PLZT thin films.

采用金属有机分解法(MOD)在LNO(100)/Si衬底上制备了Pb0.985La0.01(Zr0.4Ti0.6)O3(PLZT)铁电薄膜.在薄膜的快速退火过程中,增加了一个中间温度预退火过程,并研究了该过程对薄膜晶型结构和铁电性能的影响.结果发现,中间温度预退火过程可以影响薄膜对晶型结构的选择.没有中间温度预退火过程的薄膜,显示出(100)择优取向;而经中间温度预退火的薄膜则表现为随机取向.对薄膜铁电性能的研究表明,没有中间温度预退火过程的薄膜的铁电性能较差,经380℃预退火的薄膜显示出最佳的铁电性能.晶型结构取向和缺陷是影响PLZT薄膜铁电性能的两个主要因素.

 
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