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ld阵列
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  ld array
     The AR coating we devisedhas large wave width and its reflectivity is lower than 0.2%, the technology is very simple. The Jth ofthe LD Array is high as 480 A/cm2.
     本文的低反膜系有大的带宽和小于0.2%的剩余反射率,易于工艺实现,LD阵列的阈值电流密度达到480A/cm2。
短句来源
     An all solid state laser was built, which is composed of a directional prism resonator, half-circular LD array to pump two Nd:YAG rods, Cr 4+:YAG passive Q switched, and heat-conduct structure etc.
     采用定向棱镜谐振腔、半圆柱面LD阵列交错侧向泵浦两根串接Nd:YAG激光棒、热传导冷却结构,研制出了一台工程实用的全固化激光器。
短句来源
     A design of temperature adaptively adjustable driver for LD array
     带有温度自适应调节的LD阵列驱动电源的设计
短句来源
     The method of individually water cooling of the LD array and the laser crystal is giver after analyzing the thermal effect of high power LD pumped solid-state laser.
     重点分析了高功率LD阵列泵浦的固体激光器热效应问题,提出了LD阵列与激光介质分别水冷的方案来解决高功率全固态激光器的热效应问题。
短句来源
     Utilizing four-level rate equation and double-frequency theory of analogous-Gauss beam, laser output power on the KTP length is calculated for LD array side-pumped 660 nm red laser. The optimal parameters are given. Theoretical analysis agrees quite well with the experimental results.
     利用四能级激光系统的速率方程和类高斯光束倍频理论,计算了在LD阵列侧面泵浦Nd3+:YAG/KTP660 nm红光激光器中,倍频晶体长度与谐波输出功率的函数关系,分析了激光器工作特性,优化选择了腔参数,得到与理论计算符合较好的实验结果。
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  “ld阵列”译为未确定词的双语例句
     Usinga LDA with 15 W,when the incident pump power was 12 W,the passively Q-switched average power infrared output power reached 2.2 W,and the period of the pulse was 40 μs,and the width of the pulse was 18 ns,and the peak power rose up to 4.9 kW.
     用15 W的LD阵列,当LD泵浦功率为12 W的情况下,红外(1064μm)调Q平均输出功率为2.2 W,脉冲序列周期为40μs,脉宽为18 ns,峰值功率高达4.9 kW.
短句来源
     808 nm QCW High Power LD Arrays
     808nm大功率准连续LD阵列
短句来源
     Numerical calculation and experiment were made,a maximum output power of 63.6mJ was gotten with 276mJ pump power at a frequency of 20Hz,the slope efficiency was 34%.
     对多LD阵列同时抽运激光晶体的吸收与增益情况进行了计算,并在实验中予以验证,采用半环形对称抽运的方式,在20Hz的工作频率下,以总抽运单脉冲276m J的能量获得最大63.6m J的圆形对称脉冲激光输出,斜效率34%。
短句来源
     Through analysis for the performance features of laser diode array end-pumped disk laser amplifier,a finite element thermal model of laser crystal Nd∶YLF is established.
     针对LD阵列端面泵浦片状放大器的工作特点,建立了对增益介质Nd∶YLF进行热特性研究的有限元模型。
短句来源
     The characteristics of the pumping light distribution in Nd:YAG rod direct side-pumped by diode bars are studied in this paper.
     研究LD阵列侧面泵浦Nd:YAG激光器泵浦光场的分布特点。
短句来源
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  相似匹配句对
     Pulse Power Supply for High Performance Semiconductor Laser Diode Arrays
     高性能LD阵列脉冲电源
短句来源
     Semi-circumferential LD arrays symmetrically-pumped solid-state lasers
     LD阵列半环形对称抽运的固体激光器
短句来源
     The Mierolen Array
     微透镜阵列
短句来源
     Tactual Sensation Arrays of Neural Networks
     触觉神经网络阵列
短句来源
     LD the laser illumination
     LD激光照明
短句来源
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:A high efficiency Nd:YAG laser pumped by a LD arrays was reported.The dependent of the output power on duty cycle and pulse width was investigated.The output power of 1.9w and opticaloptical conversion efficiency of 40.4% were obtained at the input power of 4.7w.We use lens duct to deliver the pumping power to Nd:YAG rod.Without antireflection coated for 808nm on two surfaces of lens duct,the transfer efficiency of lens ducts is 84%.

报道了准连续激光二极管阵列端泵浦的高转换效率高功率Nd:YAG激光器。研究了输出功率与占空比及脉宽的关系。在平均输入功率为4.7w时,获得平均输出功率1.9w,光-光转换效率为40.4%。实验中使用透镜导管作为耦合系统,可以将LD阵列的大发散角、大发光面的激光束有效地耦合到激光棒的输入端面。透镜导管两端面末镀808nm抗反膜情况下,测得其传输效率为84%。

The study on laser diode arrys sidepumping small sign Nd∶YLF laser amplifier is lntroduced in the paper. Correspondingly ideal pumping light utilizing efficiency and pumpfield distribution are obtained by this way. A small signal gain of 2.8 is obtained at 1053nm.

描述了LD阵列侧面泵浦Nd∶YLF激光放大器的实验研究,采用LD阵列紧密围绕棒状Nd∶YLF直接泵浦,这种结构不但提高泵浦光利用率,而且具有很好的泵浦均匀性。该激光放大器的口径为3mm,在1053nm小信号增益为2.84。

The main reason which restricts the application of semiconductor laser diode is its beamquality .The question can be well resolved by using laser diode array phase-locking in which weevaporate anti-reflecting film on the emitting side. We devised high-reflecting film(HR coating) anti-reflecting film(AR coating) and got high current density (Jth) LD Array. The AR coating we devisedhas large wave width and its reflectivity is lower than 0.2%, the technology is very simple. The Jth ofthe LD Array is high as 480...

The main reason which restricts the application of semiconductor laser diode is its beamquality .The question can be well resolved by using laser diode array phase-locking in which weevaporate anti-reflecting film on the emitting side. We devised high-reflecting film(HR coating) anti-reflecting film(AR coating) and got high current density (Jth) LD Array. The AR coating we devisedhas large wave width and its reflectivity is lower than 0.2%, the technology is very simple. The Jth ofthe LD Array is high as 480 A/cm2.

光束质量问题是制约半导体激光器应用的主要因素,采用出光面蒸镀低反膜LD阵列半导体激光器阵列锁相技术较好地解决了这个问题。本文设计并制作了高反膜系和极低反膜系,获得了高阈值的LD阵列。本文的低反膜系有大的带宽和小于0.2%的剩余反射率,易于工艺实现,LD阵列的阈值电流密度达到480A/cm2。

 
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