n型硅的 n-doped silicon(3)   n-doped silicon      Experimental on Micro-EDM of N-doped Silicon in Demonized Water      去离子水中N型硅的微细电火花加工工艺实验 短句来源      The experiments of n-doped silicon micro-EDM in demonized water have been carried out. The maching speed,the wear of the electrode roughness in demonized water are compared with those in kerosene.      对去离子水中N型硅的微细电火花加工工艺进行了实验研究,分别在加工效率、电极损耗、表面粗糙度等方面与煤油工作液中N型硅的加工进行了对比。 短句来源      The experimental results show that the maching speed of n-doped silicon micro-EDM in demonized water is higher than in kerosene,and the wear of the electrode is also higher,and roughness is almost the same. Demonized water is a kind of better dielectric fluid.      通过大量的实验研究得出:在相同的电参数下,与煤油工作液中加工实验相比,以去离子水为工作液介质时微细电火花加工N型硅的加工效率更高,其工件表面粗糙度值基本相当,且其放电加工过程非常稳定,可知微细电火花加工N型硅时,去离子水是一种较好的工作液介质。 短句来源   “n型硅的”译为未确定词的双语例句      Ohmic Contact On High Resistivity N-Si      高阻N型硅的欧姆接触 短句来源      Based on this, the quantitative relationship between longitudinal and transverse piezoresistance coefficient of N-silicon is derived asMoreover, π12 sing is positive and π11 is engative.      由此推导出N型硅的纵向压阻系数π_(11)与横向阻压系π_(12)之间的关系是: π_(12)=-1/2π_(11)且π_(12)的符号是“正”,π_(11)的符号是“负”。 短句来源      Electron Irradiation of High Resistivity n-Type Silicon      高阻n型硅的电子辐照 短句来源      PROPERTIES OF RAPID THERMAL ANNEALING ON B~+ IMPLANTED n TYPE SILICON      硼离子注入n型硅的快速退火特性 短句来源      The experimental results show that the ra- diation resistance of the silicon with higher resistivity is higher and that irradiation at large flux can change n-type silicon into p-type.      实验结果表明:高阻硅比低阻硅具有更强的抗辐射能力,大剂量的电子辐照可以改变n型硅的导电类型。 短句来源 更多          相似匹配句对      (2)C shape;      C型 ; 短句来源      (3)D shape.      D型。 短句来源      Electron Irradiation of High Resistivity n-Type Silicon      高阻n型硅的电子辐照 短句来源      Ohmic Contact On High Resistivity N-Si      高阻N型硅的欧姆接触 短句来源      Deposition of Plasma Enhancement Chemical Vapour Deposition Silicon Nitride      等离子增强型化学气相淀积氮化硅的淀积 短句来源 查询“n型硅的”译词为用户自定义的双语例句     我想查看译文中含有：的双语例句 为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法，我们为您准备了出自英文原文的大量英语例句，供您参考。   n-doped silicon Nanocrystalline diamond film was deposited by microwave CVD in the ASTeX type reactor on a mirror polished (111) oriented n-doped silicon substrate. 例句来源       The TiO2 powder was dispersed in aqueous solutions of poly(3,4-ethylendioxythiophene)/poly(styrenesulfonate) (PEDOT-PSS), and the blends were coated on n-doped silicon substrates to achieve simple design heterojunctions. 例句来源       Ti(Si(1-x)Ge(x))2 formation on narrow lines was carried out on phosphorous doped material, because of the well known difficulties of forming silicide on heavily n-doped silicon. 例句来源                According to the experimental results, the effects of original silicon parameters on characteristics of semicondoctor detectors have been discussed. These parameters are: crystallized condition under different atmosphere, homogeneity of resistivity, impurity compensation, carrier lifetime, oxygen content, dislocation and other defects. The radi-ation detectors from various N-type and P-type silicon single crystals of high resisti-vity have been made, and the performance of detectors are compared. The basic ...             本文根据实验结果讨论了原始硅单晶的不同生长气氛、电阻率均匀度、杂质补偿度,载流子寿命、位错、含氧量等对半导体核辐射探测器性能的影响,对于用不同参数的高阻P型和N型硅单晶制成的探测器进行了比较和分析。文中也谈到了对探测器级硅单晶的基本要求和今后展望。 文摘来源          In this paper the electrical properties of Platinum and Palladium centers in n-type             本文用瞬态电容、热激电容和热激电流方法测量n型硅中铂和钯的电学性质.n型硅中铂的二个能级是E_c-0.22eV和E_c-0.30eV.掺钯的n型硅中亦存在二个能级为E_c-0.23eV和 E_c-0.29eV.第二个深能级 E_c-0.29eV由于它的位置和浓度与高温淬火引起的能级相仿,所以这一能级的起因尚需进一步研究. 文摘来源          We have observed electrical defects in p+ implanted N-type Si. After thermal annealing at the temperature range from 200℃ to 700℃ and Cw-Co2 laser annealing with different radiative time the energy levels, concentration profile and capture cross section of these traps were measured. Possible structures of defects were discussed on the comparison of annealing behaviour of defects with results obtained by other authors.             用DLTS确定N型硅中注磷产生的电学缺陷,测量了从200℃到700℃热退火和不同辐照时间的CW-CO_2激光退火后电子陷阱的能级,浓度剖面分布和俘获截面,根据缺陷的退火行为并和已报道的数据进行了比较,分析了缺陷的可能构造。 文摘来源   << 更多相关文摘         相关查询: n型 n型gap n型电导 n型si n连接型 n型保护区 n型催化剂 基本型n n-型 n型半导体 n型方钴矿 n型硅  对查询结果不满意

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