表面能带弯曲 surface band bending(0)   “表面能带弯曲”译为未确定词的双语例句      The experimental measurements together with the theoretical results indicate that the Bir_Aronov_Pikus (BAP) mechanism plays a dominant role for spin polarization decay, especially in band bending region of GaAs(100).      结果表明,由费米钉扎而引起的能带弯曲明显影响电子的自旋弛豫过程,从实验上观察到了GaAs(100)表面能带弯曲区域的电子自旋翻转时间存在近2个量级的差异(从几纳秒到几十皮秒),基于电子_自旋交换相互作用的BAP机理在自旋弛豫过程中起着主导作用. 短句来源      Upon the deposition of GaS,the band bending of the GaAs surface is found to be reduced by 0 4eV.It means that Fermi level pinning of the GaAs surface can be eliminated to a certain extent.      并发现 Ga S的淀积能使 Ga As原有的表面能带弯曲减小 0 .4e V,这意味着表面费米能级钉扎在一定程度上得到消除 . 短句来源      Possible mechanisms of the dopant contrast are discussed, with a detailed description of two main mechanisms, band bending at the semiconductor surface, and the presence of a local surface field outside the specimen.      文中还探讨了半导体掺杂衬度的可能的机理 ,详细介绍了两种主要机理 :表面能带弯曲和样品外局域电场的出现 短句来源   相似匹配句对      THE DETERMINATION OF SURFACE BAND BENDING AND ELECTRON AFFINITY OF GaAs BY MEANS OF ULTRA-VIOLET PHOTOELECTRON SPECTROSCOPY      用UPS测量GaAs表面的能带弯曲和电子亲和势 短句来源      A 1.36 eV band bending in surface region is induced by these empty surface states.      空表面态引起n型样品表面能带发生1.36eV弯曲。 短句来源      Band Bending of Cleaved GaAs (110) Surface      GaAs(110)解理面的能带弯曲 短句来源      Band Bending of Cleaved InP(110) Surface      InP(110)解理面的能带弯曲 短句来源      A Calculation of the Electronic Band of InP (110) Surface      InP(110)表面电子能带计算 短句来源 查询“表面能带弯曲”译词为用户自定义的双语例句     我想查看译文中含有：的双语例句 为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法，我们为您准备了出自英文原文的大量英语例句，供您参考。   surface band bending It is found that submonolayer Ba coatings induce cardinal changes in the electronic properties of the surface with the formation of a charge accumulation layer in the region of the near-surface band bending. 例句来源       It is shown that the reversible temperature-induced changes in the surface band bending and the work function of Si have a stepwise character in the temperature range 80-300 K. 例句来源       It is shown that holes can move through surface channels formed by regions of surface band bending to distances of tens of micrometers from the place where they originally appear at the surface. 例句来源       The surface band bending for p-doped silicon is less than 30?meV, while acceptor-type defects cause significant and preparation-dependent band bending on n-doped samples. 例句来源       In the first part, the origin of interface dipoles, interface states, and surface band bending is discussed. 例句来源       更多                    Effect of annealing and light illumination on electrical and optical properties of undoped a-Si :H films were studied. The surface energy band bending is created by H20 adsorbats in order to compare the difference between annealing state and light illumination state. The results show that the density of gap state has been increased by light illumination.             研究了直流辉光放电沉积本征a-Si:H薄膜在退火与光照过程中电性和光性的变化。用表面水汽吸附实验造成表面能带弯曲。从退火态与光照态能带弯曲程度的不同验证了光照后带隙态密度增加。 文摘来源          UPS involving core level photoemission peaks (Ga 3d for GaAs and Si 2p for Si)is measured for the (111), (110), (111),and (001)surfaces of GaAs and Si using thelight from a helium lamp (21.2 eV and 40.8 eV) and from the Berlin synchrotron ra-diation source BESSY (108.6 eV),respectively.These surfaces are prepared by ion bo-mbardment and annealing on cylindrically shaped GaAs and Si crystals with [110] astheir axis.The GaAs cylinder is in addition prepared by molecular beam epitaxy yield-ing As-rich phases o...             利用 He灯光源(21.2eV和 40.8 eV)和柏林 BESSY同步辐射光源(108.6eV),分别测量了GaAs和Si的(111)、(110)、(111)和(001)表面的包括芯态光电子峰(GaAs的Ga 3d和Si的2p)的光电子谱.这些表面是利用离子轰击加高温退火的方法,分别在以[110]晶向为轴的GaAs和Si单晶圆柱体上制备的.另外,还利用分子束外延方法在GaAs 圆柱面上制备其外延表面,这样得到的(111)和(001)面是富As的.根据光电子谱的低能(二次电子)阈值和芯态光电子峰的能量位置,确定各种表面的功函数φ和电子亲合势x. 结果表明,由于GaAs晶体的极性和表面成分的差异,它的x值随晶向的变化比Si的大.不同晶向Si的x值的微弱变化,可能是由于不同的表面原子再构产生不同的表面偶极子引起的.对于GaAs的不同晶面,φ和x的变化基本上是平行的,表明不同晶向表面能带的弯曲大致相同;对于Si,_▲~＇φ的变化比x的变化明显,表明其表面能带的弯曲与晶向有关. 文摘来源          According to the value of energy difference between Ga3d core level and the valence band maximum of GaAs precisely determined by Kraut et al., the position of Fermi level with respect to the valence band maximum at the surface and the surface band bending of clean GaAs(111) can be determined by measuring the exact binding energy of Ga3d level in the UPS experiment. The electron affinity of GaAs can also be obtained by measuring the work function from the threshold of secondary electron energy distribution i...             根据Kraut等用XPS精确测定的GaAs中Ga3d芯能级到价带顶的能量差,在UPS实验中,由测定的Ga3d结合能数据,得出了清洁GaAs(111)的费米能级在表面处的位置,也即求得了表面的能带弯曲.再由UPS的二次电子阈值测定了功函数,从而求得GaAs的电子亲和势.对于用氩离子刻蚀并退火所获得的清洁GaAs(111)(2×2)富Ga表面,费米能级钉扎即已发生,其钉扎位置是在价带顶以上0.75eV附近,与Spicer等在GaAs(110)面上所观察到的受主型钉扎能级相符合. 文摘来源   << 更多相关文摘         相关查询: 表面能带 表面能带结构 表面 表面投影能带结构 表面［ 能带 表面态和能带结构 表面结冰 表面仪 热表面 理想表面 倾斜表面  对查询结果不满意

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