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掺mn
相关语句
  mn doped
     Mn Doped Base Double Collection Regions InGaAsP/InP HPT
     掺Mn基区InGaAsP/InP双集电区异质光敏晶体管
短句来源
     Photorefractive Properties of Mn Doped Potassium Sodium Strontium Barium Niobate Crystals
     掺Mn钾钠铌酸锶钡晶体光折变研究
短句来源
     The Mn2p 3/2 X ray photoelectron spectra (XPS) pattern of the BST thin film shows that the valence state of the Mn doped BST has a same valance as the Mn(Ⅱ) dopant.
     根据掺 Mn BST的 Mn2 p3/2 X-射线光电子能谱 (XPS)图中 Mn2 p3/2 的峰位置 ,显示出薄膜中 Mn的价态与加入的 Mn( )离子价态相同。 根据结合能的峰移 ,可以得到掺 Mn BST的费密能级降低0 .7e V。
短句来源
     The salmon pink Mn doped α-Al_2O_3 crystal was synthesized by doping Mn(NO_3)_2 in the precursors under the same condition.
     在同样的条件下 ,通过掺入Mn(NO3 ) 2合成了掺Mn橙红色刚玉晶体。
短句来源
     Reflecting holographic storages with a read-out efficiency of up to 60% are obtained in Mn doped KNSBN crystal by using He-Ne laser beams of uW powers.
     微瓦级的He-Ne激光器在掺Mn的KNSBN晶体中实现反射全息存储,最大净读出效率达60%。
短句来源
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  “掺mn”译为未确定词的双语例句
     The Current-voltage Characteristics in Doped Mn Chalcogenide Glass Semiconductor As_(35)Te_(55)Si_(10)
     掺Mn的硫系玻璃半导体As_(35)Te_(55)Si_(10)的电流—电压特性
短句来源
     ESR Study of Mn and Cu in Chalocogenide Glass Semiconductors As_(35)Te_(55)Si_(10)
     硫族化合物非晶态半导体As_(35)Te_(55)si_(10)掺Mn和Cu的ESR特性
短句来源
     When y=0.11,the lattice parameters are the smallest, and the properties are εr=82.8,Q·f =5830GHz, τf =20ppm/℃.
     当掺Mn量为1.0wt%时,陶瓷的εr=84,Q·f =6280GHz,τf = -3.6 ppm/℃。
短句来源
     MANGANESE DOPED COMPOSITE GARNET 3 5O 12
     掺Mn的[YGdCa]_3[FeVInMn]_5O_(12)复合石榴石
短句来源
     Mn 2+ doped Zn 2SiO 4 was prepared by a sol gel process at weak oxidation atmosphere and 1000℃ and keeping this temperature for 2 hours.
     利用Sol gel法制备掺Mn2 + 的Zn2 SiO4的前驱体 ,并将前躯体在弱氧化气氛下在 10 0 0℃煅烧 2h ,得到掺Mn2 + 的Zn2 SiO4试样。
短句来源
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  相似匹配句对
     (mn) result for n buyers, m commodities single-minded auction.
     (mn)。
短句来源
     Study on Electronic Structure of ZnS:Mn 2+
     ZnSMn的电子结构研究
短句来源
     Magnetic Memory Cores of the Cd and Zn Doped Li-Mn Ferrite
     Cd和Zn的Li—Mn铁氧体记忆磁芯
短句来源
     /Mn?
     /Mn?
短句来源
     Ytterbium-doped Laser Glass
     镱激光玻璃
短句来源
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  mn doped
Quasi-planar integration of an InGaAsP/InP double collection region HBT and an edge-emitting led with Mn doped active layer
      
A monolithically integrated InGaAsP/InP device including an HBT and an E-LED was fabricated with quasi-planar structure using Mn doped active layer and selective Zn diffusion as well as polyimide protection.
      
Mn doped sample presented a wide range of sintering temperature.
      
The properties parameters of Mn doped PZT are listed as follows: piezoelectric constant d33=256pC/N, mechanical quality factor Qm=2079, coupling coefficient Kp=0.53, Coercive field Ec=22.5kV/cm, Cure Temperature Tc=286°C.
      
The knowledge gained from the pristine boundaries is used to interpret experimental and theoretical results from a Mn doped Σ5 SrTiO3 grain boundaries.
      
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Applications in the latching devices require the microwave ferrites with better temperature stability and hysteresis properties. This article deals with the preparation of the YGd Mn IG materials and investigates the improvement of the properties just mentioned. The effects of the Gd and Mn substitutions and of the control of the technological conditions on the properties of the materials are discussed.

在闭锁式器件的应用中对微波铁氧体材料提出了有较好的温度稳定性和磁滞性能的 要求。本文研制了 YGdMnIG材料.提高其温度稳定性和磁滞性能,并对掺 Gd,掺 Mn 对性能影响,工艺条件的控制等问题进行了讨论。

Applications in the latching devices require the microwave ferrites with better temperature stability and hysteresis properties.This article deals with the preparation of the YGd Mn IG materials and investigates the improvement of the properties just mentioned.The effects of the Gd and Mn substitutions and of the control of the technological conditions on the properties of the materials are discussed.

在闭锁式器件的应用中对微波铁氧体材料提出了有较好的温度稳定性和磁滞性能的要求。本文研制了YGdMnIG材料,提高其温度稳定性和磁滞性能,并对掺Gd,掺Mn对性能影响,工艺条件的控制等问题进行了讨论。

Dependences of the conductivity on the temperature and ESR signal and the strength curve of x-diffraction were measured to the chalcogenide glasses Ge_(15)Te_(81)S_2Sb_2 of doped Mn. Effects of doped Mn on the conduction and the structure in the amorphous semiconductors were also studied.

本文对掺Mn的硫系玻璃Ge_(15)Te_(81)S_2Sb_2样品,进行了电导率与温度关系、ESR信号和X衍射强度曲线的测量,并研究了Mn杂质对非晶态半导体导电和结构的影响。

 
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