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电化学脉冲腐蚀
相关语句
  pulsed electrochemical etching
     Preparation of Uniformly Luminescence Porous Silicon by Pulsed Electrochemical Etching Method
     电化学脉冲腐蚀制备均匀发光多孔硅
短句来源
     Narrow-Line Light Emission from Porous Silicon Microcavities Prepared by Pulsed Electrochemical Etching Method
     电化学脉冲腐蚀法制备窄峰发射的多孔硅微腔
短句来源
     A dynamic etching model based on diffusion of HF acid explains the experimental results well. It indicates that the narrow emission peak of porous silicon mirocavities prepared by the pulsed electrochemical etching method can be attributed not only to longitudinal etching, but also to transverse etching (soaking etching) of HF.
     并用了以HF酸扩散为基础的多孔硅动态腐蚀机理对实验结果进行了解释,认为在用电化学脉冲腐蚀法制备多孔硅微腔的过程中,不但要考虑到HF酸对硅的纵向腐蚀(电流腐蚀),也要考虑到HF酸对多孔硅硅柱的横向腐蚀(浸泡腐蚀)。
短句来源
     Firstly, PSMs were prepared by the pulsed electrochemical etching method and the experimental conditions were optimized.
     一、用电化学脉冲腐蚀法制备多孔硅微腔,优化了实验参数。
短句来源
  相似匹配句对
     ELECTROCHEMISTRY OF CORROSION IN MOLTEN SALTS
     熔盐腐蚀电化学
短句来源
     Preparation of Uniformly Luminescence Porous Silicon by Pulsed Electrochemical Etching Method
     电化学脉冲腐蚀制备均匀发光多孔硅
短句来源
     Pulse Electrochemical Burr-removing Technology
     脉冲电化学去毛刺工艺
短句来源
     THE CORROSIVE ELECTROCHEMICAL STUDY OF MARMATITE
     铁闪锌矿的腐蚀电化学研究
短句来源
     Corrosion
     腐蚀
短句来源
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  pulsed electrochemical etching
Single-mode, highly directional and stable photoluminescence (PL) emission has been achieved from porous silicon microcavities (PSMs) fabricated by pulsed electrochemical etching.
      


Porous silicon microcavities have been prepared by the pulsed electrochemical etching method(PEEM).The orthogonal experimental method has been adopted to optimize the experimental conditions for fabrication of porous silicon microcavities.The optimal conditions obtained from experiments are:the period of 5ms;the duty cycle of 5/10 and the Bragg reflector consisting of 6 pairs of quarter wave length layers.Under this condition,the full width at half maximum of the light emission peak is reduced to be 6nm.A dynamic...

Porous silicon microcavities have been prepared by the pulsed electrochemical etching method(PEEM).The orthogonal experimental method has been adopted to optimize the experimental conditions for fabrication of porous silicon microcavities.The optimal conditions obtained from experiments are:the period of 5ms;the duty cycle of 5/10 and the Bragg reflector consisting of 6 pairs of quarter wave length layers.Under this condition,the full width at half maximum of the light emission peak is reduced to be 6nm.A dynamic etching model based on the diffusion of HF acid is used to explain the experimental results.It indicates that the narrow emission peak of porous silicon microcavities prepared by PEEM can be attributed not only to the longitudinal etching,but also to the transverse etching (soaking etching) of HF.

电化学脉冲腐蚀方法制备了多孔硅微腔 ,讨论了脉冲电化学腐蚀的参数——周期、占空比对多孔硅多层膜制备的影响 ,并用了以 HF酸扩散为基础的多孔硅动态腐蚀机理对实验结果进行解释 ,认为在用电化学脉冲腐蚀法制备多孔硅微腔的过程中 ,不但要考虑到 HF酸对硅的纵向电流腐蚀 ,也要考虑到 HF酸对多孔硅硅柱的横向浸泡腐蚀 .可通过选取合适的周期、占空比 ,使二者对多孔硅的作用达到适中 ,以制备出高质量的多孔硅多层膜和微腔 .并用正交实验法优化了制备多孔硅微腔的参数 ,根据优化的实验参数 ,制备出了发光峰半峰宽为 6 nm的多孔硅微腔

 
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