助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   陷阱 在 物理学 分类中 的翻译结果: 查询用时:1.982秒
图标索引 在分类学科中查询
所有学科
物理学
无线电电子学
贸易经济
化学
外国语言文字
电力工业
地质学
计算机硬件技术
地球物理学
更多类别查询

图标索引 历史查询
 

陷阱     
相关语句
  trap
    Studies on Plannar Orientation and Trap Depth of PET Film
    PET薄膜取向度及陷阱深度的研究
短句来源
    The Characteristics of Near-infrared Absorptionin GaAs and the Measurement of the Concentration ofthe Main Deep Electron Trap
    GaAs近红外吸收特性和主要深电子陷阱浓度的测量
短句来源
    Difference Sampling Spectral Function Theorem and Its Applications in Researching Trap Relaxation Effect of MOS Structure
    差值取样谱函数定理及其在研究MOS陷阱弛豫效应方面的应用
短句来源
    STUDIES ON HIGH TEMPERATURE TRAP OF AlGaAs/GaAs GRIN SCH SQW LASER FABRICATED BY MBE
    分子束外延生长AlGaAs/GaAs GRINSCH SQW激光器中高温陷阱的研究
短句来源
    The diodes have the configuration of ITO/PEDOT/MEH-PPV/Ba/Al. The experiments showed that there is an ohmic contact between electrodes and MEH-PPV, and holes and electrons injected from the cathodes are unbalanced. Charged traps in the MEH-PPV result in space-charge under positive bias, and the trap concentration was estimated at about 3.75×10~ 16 cm~ -3 .
    对于结构为ITO/PEDOT/MEH-PPV/Ba/Al的发光器件,实验结果表明,电极界面是欧姆接触的,载流子的注入是非平衡的,器件薄膜中存在陷阱容易俘获注入电荷,形成空间电荷区,陷阱密度约为3.75×1016cm-3.
短句来源
更多       
  traps
    Stability of laser traps
    激光陷阱的稳定性
短句来源
    A STUDY OF NITROGEN ISOELECTRONIC TRAPS IN GaAs
    GaAs中N等电子陷阱的研究
短句来源
    Investigation of Surface Charge Traps of Polymer with C-V Technique
    用电容-电压(C-V)技术研究聚合物的表面陷阱特性(摘要)
短句来源
    PRESSURE BEHAVIOURS OF N AND NN_1 TRAPS IN GaP
    GaP中N和NNi对等电子陷阱态的压力行为
短句来源
    Photoluminescence of Excitons Bound to N Isoelectronic Traps in GaAs1_xPx:N(x≤0.88) under Hydrostatic pressure
    静压下GaAs_(1-x)P_x:N(x≤0.88)中N等电子陷阱的束缚激子发光
短句来源
更多       
  trapping
    Trapping effect modeling for SiC power MESFETs
    SiC功率金属-半导体场效应管的陷阱效应模型
短句来源
    Effect of Radiation Trapping on Spectroscopic Properties of Yb~(3+) in La_2(WO_4)_2 Crystal
    辐射陷阱效应对钨酸镧晶体中Yb~(3+)光谱性质的影响
短句来源
    Ba-sed on the assumption of the exponential distribution of the gap state density,we obtained the characteristic temperature T_t,the trapping parameterNt (both discribing the gap state property),and finally the gap state density N(E)from the non-linear I-V curve,The value of N(E_F)obtained inthis way is about 2x1O~(15)/cm~3,ev.
    按隙态的指数分布由超线性 I~V 曲线确定出描述隙态的特征温度 Tt 和陷阱参量 Nt 从而测得 N(E),我们得到 N(E_F)约为2×10~(15)/Cm~3·ev.
短句来源
    The electron trapping at high-field and detrapping in thin thermally nitrided silicon oxide (SiO_xN_y) films are studied in the present work.
    本文研究热氮氧化硅(SiO_xN_y)薄膜在高场下的电子陷阱和被陷电子的释放。
短句来源
    A new dielectric loss peak was found near by 2MHz at room temperature for the sample in the absence of Bi2O3, the corresponding electron trapping level was about 0.18 eV, it was considered that the loss peak resulted from intrinsicdefect Zni .
    发现不含Bi_2O_3试样在室温附近出现一新的损耗峰,峰值频率在2MHz左右,对应的电子陷阱能级为0.18eV,分析认为是由于本征缺陷Zn_i所致。
短句来源
更多       
  trapped
    The trapped depths were acquired by fitting the experimental results with general order kinetic model. The results suggested that the sample containing Ti in 2.5%,which was compared with the sample containing Ti in 0.5% and 0.8%,possessed many traps with befitting depths.
    用PeakFit软件以一般阶动力学模型对Ti与Y2O2S的物质的量比分别为0.5%,2.5%和8.0%的样品进行了热释光曲线拟合,得出了它的单峰曲线并计算了与其对应的陷阱参数.
短句来源
    Whereas in the heating of BGO, the trapped electrons absorb heat energy and escape from the trapping centers of impurities, recombining with holes in valence band or recombination centers and giving off TL light with the disappearance of the colour centers.
    最后简要讨论了辐照损伤下BGO晶体的热发光机理:BGO品格中的Fe、Pb杂质作为自由电子的陷阱中心,辐照下俘获受激电子形成色心,而受热时,被俘获电子获得活化能逃逸出杂质陷阱中心,与价带中的空穴或与再结合心相结合,释放出TL光子,并伴随色心的消失。
短句来源
    It is observed that when the nitridation degree is the lighter, with the increasing of the nirridation time the effective electron trap surface concentration in the films increases rapidly, and the detrapping ratio of trapped electrons is almost zero and independent of the shorting time for samples and the strength (until 8MV/cm) and duration of application of external reverse field, and the depth of the electron trap level is the deeper;
    发现:当样品被氮化的程度较轻时,膜中的有效电子陷阱表面浓度随着样品被氮化时间的增加而迅速增加,被陷电子的释放率近于零,与样品被短路的时间及外加反向电场的持续时间和大小(直到8MV/cm)无关,电子陷阱能级是较深的;
短句来源
    when the nitridation degree is the heavier with the further increasing of the nitridation time the effective electron trap surface concentration decreases and the depth of electron trap level becomes shallow gradually, and the detrapping ratio of trapped electrons gradually increases and is approximately dependent exponentially on the strength and duration of time application of external reverse field and is almost independent of the shorting time for the samples.
    当样品被氮化的程度较重时,随着对样品氮化时间的进一步增加,膜中的有效电子陷阱表面浓度逐渐减小,电子陷阱能级深度逐渐变浅,被陷电子的释放率逐渐增加,并与外加反向电场和外加反向电场的持续时间近似指数关系,几乎与样品被短路的时间无关。
短句来源
    It is found that in the range approaching the field of breakdown, the electrons in the conduction band will collide with the trapped, resulting in the trapped electrons detrapping. Once the detrapping reaches a certain value, breakdown occurs.
    经实验研究指出,在电场大于1.5×10~8V/m时,介质中陷阱捕获电子数随电场的增强而迅速下降,这是由于自由电子与陷阱中电子发生碰撞电离脱阱的结果,一旦这种碰撞电离脱阱达到一定程度时,介质便发生电击穿.
短句来源
更多       

 

查询“陷阱”译词为其他词的双语例句

 

查询“陷阱”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法,我们为您准备了出自英文原文的大量英语例句,供您参考。
  trap
We propose a mechanism on the increasing PL emission in the above structures, in which the trap state of the interface between SiO2 and nanocrystal plays an important role.
      
Many variations, especially the techniques of ion chips, have been investigated since the original ion trap quantum computation scheme was proposed.
      
Full two-dimensional control of multiple ions on an ion chip is promising for the realization of scalable ion trap quantum computation and the implementation of quantum networks.
      
One hundred cages were set in five lines at each site to trap small mammals, whose species and numbers were recorded.
      
Rodents were sampled in April, July and October in 2002 and 2003 using the trap-day method.
      
更多          
  traps
The results indicate that the original number of OSL traps that have captured electroncs is linearly related with the sum of TL decay during the OSL process.
      
Pool elements, such as preservation conditions, traps and migration paths, and reservoir rocks and facies, also served as important control factors to marine gas pools in South China.
      
We have used a direct method for free radical detection, EPR of spin trapping, and the following spin traps: N-tert-butyl-α-phenylnitrone (PBN) and α-(4-pyridyl-1-oxyl)-N-tert-butylnitrone (4-POBN).
      
The study of the rate of generation by pea mitochondria using EPR spin traps and epinephrine oxidation showed that H2O2 accumulation can be accounted for by a significant increase in the rate of production.
      
Local Radiation Belts of the Sun (Quasi-Stationary Coronal and Heliospheric Giant Traps for Solar Cosmic Rays)
      
更多          
  trapping
In this paper we have reviewed the recent progresses on the ion trapping for quantum information processing and quantum computation.
      
We have first discussed the basic principle of quantum information theory and then focused on ion trapping for quantum information processing.
      
The soliton is formed through the self-trapping of two excitons interacting with amino acid residues.
      
The free-radical trapping effect of poly(ADSNSA) was 7.5 times greater than that of ANSA.
      
It is emphasized that a strong CTC is able to provide effective trapping of electronic excitation energy from antenna chlorophyll, which is a main function of the RC.
      
更多          
  trapped
4000 aBP, Dongting Basin and the lower Changjiang valley trapped sediments in great amounts like in the river mouth.
      
Short-termin vivo exposure of mouse skin to cumene hydroperoxide (Cum-OOH) causes severe oxidative stress and formation of spin-trapped radical adducts.
      
In some bacteria, the inner membrane is invaginated, so that the "ejected " pro tons get trapped in the closed space of such intracellular membrane "sacks" which can be round or flat.
      
Resistance of native SOD to inactivation by H2O2 and the effect of applying SOD-CMC hydrogels to open wounds of rats' back skin were examined and compared to that of SOD trapped into CMC50% and CMC90% hydrogels.
      
The absorption coefficient of cluster systems with trapped N2O molecules increases at low frequencies and decays at frequencies ω >amp;gt; 500 cm-1.
      
更多          
  其他


点击这里查询相关文摘
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关陷阱的内容
在知识搜索中查有关陷阱的内容
在数字搜索中查有关陷阱的内容
在概念知识元中查有关陷阱的内容
在学术趋势中查有关陷阱的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社