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impatt振荡器
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  impatt oscillator
     8mm Pulse IMPATT Oscillator
     八毫米脉冲IMPATT振荡器
短句来源
     At present the highest output power of the pulse IMPATT oscillator is 15. 7W at 34.2 GHz.
     目前所研制的八毫米IMPATT振荡器最大的脉冲输出功率在34.2GHz下为15.7W。
短句来源
     It gives some important electrical parameters of the extra reflective cavitystabilized IMPATT oscillator,which are theoretically estimated from an equivalent circuit.
     从等效电路在理论上预计了反射式外腔稳定的IMPATT振荡器的几个重要电学参数.
短句来源
  “impatt振荡器”译为未确定词的双语例句
     The experiments show that the extra cavity stabilized oscillator operates on a frequencyrange of 70-80GHz with an output power of over 20mW (maximal power-160mW) andan efficiency of about 1-2% (maximal efficiency-3.8 %).
     实验表明,外腔稳定的IMPATT振荡器工作频率范围为70—80GHz,输出功率大于20mW(最大为160mW),效率为1—2%(最大为3.8%).
短句来源
     For system circuitry design section, millimeter wave multi-mode antenna, W-band single-end balanced diode mixer and cavity-stabilized IMPATT Diode Oscillator, were introduced.
     在系统电路设计方面,讨论了毫米波多模喇叭天线、单端平衡阻性二极管混频器、加稳频腔的IMPATT振荡器
短句来源
  相似匹配句对
     8mm Pulse IMPATT Oscillator
     八毫米脉冲IMPATT振荡器
短句来源
     COMPUTER AIDED ANALYSIS OF AN OSCILLATOR
     振荡器的计算机辅助分析
短句来源
     Crystal Oscillator
     晶体振荡器
短句来源
     It gives some important electrical parameters of the extra reflective cavitystabilized IMPATT oscillator,which are theoretically estimated from an equivalent circuit.
     从等效电路在理论上预计了反射式外腔稳定的IMPATT振荡器的几个重要电学参数.
短句来源
     Thermal Resistance Measurement of IMPATT Diodes
     IMPATT二极管热阻测试
短句来源
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  impatt oscillator
The theoretical data of these double drift IMPATT oscillator and amplifier are provided.
      
Frequency response of W-band pulsed impatt oscillator operating with a variable load
      
The reflectometer uses an IMPATT oscillator system for the source which has not been used in previous reflectometer circuits.
      
The construction and operating characteristics of the highly stabilized millimeter wave IMPATT oscillator are described.
      
As radiation sources for millimeter wave irradiation tests both Impatt oscillator (IO) and a Gunn oscillator were used.
      


This article presents the design parameters of the 4mm Si P~+NN~+ type avalanche diode,the manufacturing of the diode,the structure of the microwave oscillator and some considera-tions of its design.It gives some important electrical parameters of the extra reflective cavitystabilized IMPATT oscillator,which are theoretically estimated from an equivalent circuit.Italso gives a study on the behavior of the oscillator and its noise through a series of experiments. The experiments show that the extra cavity stabilized...

This article presents the design parameters of the 4mm Si P~+NN~+ type avalanche diode,the manufacturing of the diode,the structure of the microwave oscillator and some considera-tions of its design.It gives some important electrical parameters of the extra reflective cavitystabilized IMPATT oscillator,which are theoretically estimated from an equivalent circuit.Italso gives a study on the behavior of the oscillator and its noise through a series of experiments. The experiments show that the extra cavity stabilized oscillator operates on a frequencyrange of 70-80GHz with an output power of over 20mW (maximal power-160mW) andan efficiency of about 1-2% (maximal efficiency-3.8 %).The noise behavior of the oscil-lator is also proved to be superior to a klystron 70V10 in the same band. When it has adeviation of 30MHz from the carrier,the mean square root frequency deviation of FM noisein a bandwidth of 100Hz is: △f_(rms)=2Hz,while for a klystron 70V10 it would be-△f_(rms)=9Hz.The frequency stability of the oscillator is about 3.6×10~(-7)/minute,1.83×10~(-5)/hour,5×10~(-4)/200hours,which is also better compared to a klystron.

本文给出了4mm硅P~+NN~+型雪崩二极管的参数设计,简述了二极管的制作工艺过程、微波振荡器结构和设计考虑.从等效电路在理论上预计了反射式外腔稳定的IMPATT振荡器的几个重要电学参数.实验研究了振荡器及其噪声特性. 实验表明,外腔稳定的IMPATT振荡器工作频率范围为70—80GHz,输出功率大于20mW(最大为160mW),效率为1—2%(最大为3.8%).振荡器噪声特性优于同频段速调管70V10.偏离载波30MHz时,100Hz带宽内,FM 噪声的均方根频偏△frms=2Hz,而速调管为△frms=9HZ.振荡器稳定度为 3.6 ×10~(-7)/分,1.8 ×10 ~(-5)/小时,5 × 10~(-4)/200 小时,也优于速调管.

In this paper, the design consideration of technology, microwave circuit structure of an IMPATT diode and a pulse modulator are described. The chirp effect in the pulse bias and the way of reducing its band width are introduced. At present the highest output power of the pulse IMPATT oscillator is 15. 7W at 34.2 GHz.

本文简述了脉冲IMPATT器件的设计考虑和制造工艺以及振荡器的微波电路结构和脉冲调制器的原理。对脉冲偏置期间产生的频啁效应作了原理性说明,并提出了减小频啁带宽的方法。目前所研制的八毫米IMPATT振荡器最大的脉冲输出功率在34.2GHz下为15.7W。

 
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