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优化结构
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  optimized structure
    Optimized Structure Design for Low Threshold Quantum Structure Lasers
    低阈值量子结构激光器的优化结构设计
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    Detecting principle and optimized structure of PtSi/p-Si infrared Schottky barrier detector(IR-SBD) are described in this paper. Photoyield model of the detector is given. The manufacture and characteristic test of the IR-SBD are also successfully carried out.
    介绍了PtSi/p-Si肖特基势垒红外探测器(简称IR-SBD)的优化结构及探测机理,给出了探测器的光增益模型,并对器件进行了制作及性能测试。
短句来源
    Based on these results, optimized structure of the 3-D inductor was obtained with an inductor value of 11 nH and a Q factor of 9,respectively.
    根据理论计算的结果 ,得到了电感的优化结构 ,在 2 .5GHz的工作频率下 ,其电感值为 11nH ,Q值为 9。
短句来源
    An optimized structure of FPGA realization for digital matched filters(DMF) is presented.
    针对数字匹配滤波器(DMF)的FPGA实现提出一种优化结构.
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    A Novel Optimized Structure of Landscape Orientation Filter
    一种新颖的横向滤波器的优化结构
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  “优化结构”译为未确定词的双语例句
    The emphasis was put on the analysis of the design and configuration of the all solid-state single frequency Nd: YVO4 laser. How to realize stable efficient single-frequency operation under high pump power was analyzed both experimentally and theoretically.
    重点分析介绍全固化单频Nd:YVO_4激光器的设计与构造,从理论与实验两方面分析如何在大泵浦功率下使激光器实现稳定高效的单频运转,并为以后进一步提高输出功率,优化结构参数提供理论与实验依据。
短句来源
    Finally, waveguide-to-single ridge waveguide-to-microstrip transition is designed using HFSS FEM method.
    最后设计了60GHz波导—单脊波导—微带过渡结构,在HFSS软件中应用有限元法优化结构参数;
短句来源
    In order to accelerate the working speed of a FIR filter, the structure-optimized FIR filter, which includes a vector-multiplication that can efficiently reduce the numbers of multiplication and addition of tradition structure, has been deduced .
    从提高FIR滤波器的处理速度出发 ,在传统结构的基础上导出减少乘、加次数的优化结构 ,并利用FLEX器件系列中的查找表LUT结构构成向量乘法器 ,快速完成乘、加运算 ,提高滤波器的工作速度并节省器件资源。
短句来源
    The output power of 5.65 mW, slope efficiency of 19% are obtained when pump power is 51 mW and fiber length is 7 m.
    光纤长度 7m ,抽运功率 5 1mW时 ,激光器输出功率为 5 6 5mW ,斜率效率为 19%。 与其他结构光纤激光器相比 ,这种优化结构效率更高
短句来源
    With 21GW(at 500kV) input-power, a 3.91GHz, 2.71GW average output power microwave is generated from the optimized MILO by simulation. The saturation time is 10ns. The average efficiency is about 12.9%.
    模拟表明,优化结构可以在输入约21GW电功率(工作电压约500kV)的条件下,得到频率3.91GHz、平均功率2.71GW的微波输出,其饱和时间为10ns,平均效率为12 9%。
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  optimized structure
The limiting characteristics of the laser (optimum structure parameters, minimum threshold current density, and characteristic temperature of the optimized structure) are discussed at length.
      
A maximum CW output power of 4.4 W is reached in an optimized structure.
      
In order to study the electronic transport properties, an optimized structure in which there is no parallel conduction over the doped layer was chosen.
      
The final optimized structure of melittin strongly depends on the temperature.
      
The total loss of the optimized structure is 0.258 dB.
      
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Detecting principle and optimized structure of PtSi/p-Si infrared Schottky barrier detector(IR-SBD) are described in this paper. Photoyield model of the detector is given. The manufacture and characteristic test of the IR-SBD are also successfully carried out. Under the temperature of 77 K, the reverse leakage current of the IR-SBD is 5× 10(-6) μA at reverse bias voltage of 4 V. The responsibility is 2. 69×10(-2) A/W and quantum efficiency is 2. 4% for the infrared light wavelength of 1. 52μm.

介绍了PtSi/p-Si肖特基势垒红外探测器(简称IR-SBD)的优化结构及探测机理,给出了探测器的光增益模型,并对器件进行了制作及性能测试。器件在77K下,反偏4V时的反向漏电流为5×10(-6)μA,对1.52μm红外光的灵敏度为2.69×10(-2)A/W,量子效率为2.4%。

In this paper, the high voltage behavior of the LDMOST with internal field rings is investigated by using analytical approach, and the parameters of the internal field rings are optimized. Expressions of the breakdown voltage of the optimal device structure are derived. The accuracy of the analytical expressions is verified by comparison with 2 D simulation results.

文章讨论了内场限环结构LDMOST的参数优化和器件耐压问题,采用直接积分的方法推导出内场限环表面掺杂浓度的精确优化公式.同时,对LDMOST的优化结构开展了耐压分析.与国外同类工作比较,此方法简便直观,计算结果与二维数值模拟结果符合得较好.

SrS:Ce TFEL devices based on layered optimiaztion structure were prepared with electron beam evaporation method.The strong blue green emission originating from 2D(5d)→2F 5/2 (4f) and 2D(5d)→2F 7/2 (4f) was observed.The influences of the driving voltage on emission intensity,transfer charge and luminescent efficiency were investigated.The emission wave form indicated that derict impactexcitation was dominant mechanism for SrS:Ce TFEL in this structure....

SrS:Ce TFEL devices based on layered optimiaztion structure were prepared with electron beam evaporation method.The strong blue green emission originating from 2D(5d)→2F 5/2 (4f) and 2D(5d)→2F 7/2 (4f) was observed.The influences of the driving voltage on emission intensity,transfer charge and luminescent efficiency were investigated.The emission wave form indicated that derict impactexcitation was dominant mechanism for SrS:Ce TFEL in this structure.

本文采用了分层优化结构,用电子束蒸发的方法制备SrS:CeTFEL器件,获得了明亮的蓝绿发光,测量了发光亮度,传导电荷,发光效率等基本参量与驱动电压的关系;通过发光波形的测量,讨论了SrS:Ce的发光机理,发现这一结构中SrS:Ce的激发机理主要表现为直接碰撞激发。

 
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